NF 034
Abstract: IGBT abb datasheets 12K1201
Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1201 Die size: 11.9 x 11.2 mm Doc. No. 5SYA1635-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions
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12K1201
5SYA1635-01
CH-5600
NF 034
IGBT abb datasheets
12K1201
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1262 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1630-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage
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76K1280
Abstract: No abstract text available
Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-03 04 14 • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values
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12K12
Abstract: 5SLX12F1200
Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1273 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1633-00 June 05 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area
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CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-02 Dez 12 • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values
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12K1280
Abstract: No abstract text available
Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values
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12K1280
CH-5600
12K1280
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1201 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1635-00 Mar 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1280 PRELIMINARY Die size: 11.0 x 11.0 mm Doc. No. 5SYA1308-01 Aug 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide
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CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1274 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1303-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-02 Dez 12 • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values
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CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1280 Die size: 11.0 x 11.0 mm Doc. No. 5SYA1308-03 04 14 • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications
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12K1280
5SYA1308-03
CH-5600
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keytek MZ15
Abstract: keytek RC SUPPRESSOR 20 kv 11K11
Text: Application Note Vishay Semiconductors ESD Protection: I/O Port Designers Look to Protect Against ESD Threats By Jon Schleisner Senior Applications Engineer Reliability has become an essential component of any communication and data management system. In some
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21-Feb-03
keytek MZ15
keytek
RC SUPPRESSOR 20 kv
11K11
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Untitled
Abstract: No abstract text available
Text: Application Note Vishay Semiconductors ESD Protection: I/O Port Designers Look to Protect Against ESD Threats By Jon Schleisner Senior Applications Engineer Reliability has become an essential component of any communication and data management system. In some
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12K1280
Abstract: No abstract text available
Text: VRRM = IF = 1200 V 100 A Diode-Die 5SLY 12G1200 Die size: 8.4 x 8.4 mm Doc. No. 5SYA 1683-01 Dez 12 • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1
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12G1200
CH-5600
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59012 h 331
Abstract: No abstract text available
Text: r to 61 41 65 45 = = = = 1% 1% 5% 5% Tol. Tol. Tol. Tol. on a miniReel in a miniBag on a miniReel in a miniBag Size Code 2 3 5 6 = = = = 0402 0603 0805 1206 Dimensions L x W : 7 = 1210 8 = 2010 9 = 2512 C ase Resistor value Code in £1 — { Use code from product chart)
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22M12
10M12
22M12
59012 h 331
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keytek
Abstract: 8K89 keytek MZ15
Text: ESD Protection: I/O Port Designers Look to Protect Against ESP Threats By Jon Schleisner Senior Applications Engineer ticated and expensive test equipment. In this case, the test Reliability has become an essential component of any with TPC-2 tip. The events were recorded with a Tektronics
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10K-10
11K-11
12K-12
keytek
8K89
keytek MZ15
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AD7240JN
Abstract: AD7240BQ AD589H AD589HL AD7240 AD7240AQ AD7240KN AD7240SD AD7244
Text: ANALOG DEVICES □ FEATURES Fast V oltage S ettling Tim e: 550ns to 0.01% Total U nadjusted Error: 1LSB m ax Single Supply Operation Latch U p Proof N o Protection Schottky Required Superb Differential Nonlinearity: 1/2LSB m ax over Tem perature Low P ow er Dissipation: 30m W
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12-Bit
AD7240
550ns
AD7240
E630-10-6/81
AD7240JN
AD7240BQ
AD589H
AD589HL
AD7240AQ
AD7240KN
AD7240SD
AD7244
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1.5K12,A,
Abstract: No abstract text available
Text: 6-Drawer mini Warehouse Assortment Kit InDevelopment 03*1996 Subject To Design Change! ' 300 items 54,000pcs. Total! Excellent for stores & labs One finger open & close lid Replaceable when depleted Ship Weight: 10 Kg 22 lbs. 2nd ( >ider \ u mhci s O rd e r#
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000pcs.
150pF
220pF
330pF
470pF
2200pFELF
LL914
LL4148
BAV100
MMBT2222A
1.5K12,A,
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AD7240JN
Abstract: AD7240BQ AD7240 AD7240AQ V1F diode AD7240KN AD7240SD AD589HL AD7244
Text: ANALOG DEVICES □ FEATURES Fast V oltage S ettling Tim e: 550ns to 0.01% Total U nadjusted Error: 1LSB m ax Single Supply Operation Latch U p Proof N o Protection Schottky Required Superb Differential Nonlinearity: 1/2LSB m ax over Tem perature Low P ow er Dissipation: 30m W
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OCR Scan
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PDF
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12-Bit
AD7240
550ns
AD7240
E630-10-6/81
AD7240JN
AD7240BQ
AD7240AQ
V1F diode
AD7240KN
AD7240SD
AD589HL
AD7244
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