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    12N60 DC Search Results

    12N60 DC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    12N60 DC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12n60 dc

    Abstract: 12n60
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 12N60L 12N60G QW-R502-170 12n60 dc

    12n60a

    Abstract: 12N60 12N60L 12n60 dc 12n60b 12A 650V MOSFET 12N-60a power mosfet 200A 12N60L-x-TF3-T 12N60G
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 12N60L 12N60G QW-R502-170 12n60a 12N60L 12n60 dc 12n60b 12A 650V MOSFET 12N-60a power mosfet 200A 12N60L-x-TF3-T 12N60G

    12n60c

    Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB
    Text: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS CT ODU ODUCT


    Original     		PDF G12N6 12N60 S12N6 HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS GTG12N 12n60c 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB

    Untitled

    Abstract: No abstract text available
    Text: [ /Title HGTP 12N60 C3R, HGT1 S12N6 0C3RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBTs ) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch HGTP12N60C3R, HGT1S12N60C3RS T UCT ROD RODUC P E P T E E OL UT


    Original     		PDF GTP12 HGTP12N60C3R, HGT1S12N60C3RS 12N60 S12N6

    tf 12n60

    Abstract: No abstract text available
    Text: AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC


    Original     		PDF AOT12N60FD/AOB12N60FD/AOTF12N60FD AOT12N60FD/AOB12N60FD/AOTF12N60FD AOT12N60FDL AOB12N60FDL AOTF12N60FDL O-220 O-263 O-220Fate tf 12n60

    12N60 equivalent

    Abstract: 12N60 mosfet 600V 60A TO-220 silan mosfet 600V 60A TO-220 Power MOSFET Wafer
    Text: 3VD499600YL 3VD499600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD499600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø 3 1 Advanced termination scheme to provide enhanced


    Original     		PDF 3VD499600YL 3VD499600YL O-220 12N60; 12N60 equivalent 12N60 mosfet 600V 60A TO-220 silan mosfet 600V 60A TO-220 Power MOSFET Wafer

    12N60

    Abstract: 12n60 dc
    Text: 3VD499600YL 3VD499600YL 高压MOSFET芯片 描述 Ø 3VD499600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；


    Original     		PDF 3VD499600YL 3VD499600YL 3VD499600YLN 600VMOS O-220 12N60 12N60 12n60 dc

    F12n60

    Abstract: 12N60F 12N60 12N-60F 12n60 dc
    Text: AOT12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary The AOT12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT12N60FD/AOTF12N60FD AOT12N60FD/AOTF12N60FD AOT12N60FDL AOTF12N60FDL O-220 O-220F F12n60 12N60F 12N60 12N-60F 12n60 dc

    Untitled

    Abstract: No abstract text available
    Text: AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC


    Original     		PDF AOT12N60FD/AOB12N60FD/AOTF12N60FD AOT12N60FD/AOB12N60FD/AOTF12N60FD AOT12N60FDL AOB12N60FDL AOTF12N60FDL O-220 O-263 O-220F

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    12N60FI

    Abstract: 12N60F sth12n60fi 12N60 transistor 12n60 st 12N60 12N-60F STH12N60 12n60 dc GS 069 7.2 24 v
    Text: SGS-THOMSON ELiOT iD SS STH12N60 STH12N60FI N^ CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STH12N60 STH12N60FI d ss 600 V 600 V R D S (o n Id 0.6 n 0.6 £2 12 A 7 A ; ; . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF STH12N60 STH12N60FI ISOWATT218 12N60 12V60/' 12N60FI 12N60F sth12n60fi transistor 12n60 st 12N60 12N-60F 12n60 dc GS 069 7.2 24 v

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF