12N60A Search Results

Contextual Info: Low VCE sat IGBT with Diode IXSA 12N60AU1 VCES = 600 V IC25 = 24 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES

Contextual Info: n ix Y S L o w V ^ IG B T with Diode IXSA 12N60AU1 VCES IC25 VCE sat 600 V 24 A 2.5 V Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions TO-263AA Tj =25°Cto150°C 600 V VC0R Tj =25°C to150°C ;R GE=1 MQ 600 V VGES Continuous ±20

Contextual Info: Advanced Data Low VCE sat| IGBT with Diode IXSA 12N60AU1 VCES I v C25 CE(sat 600 V 12 A 2.5 V Short Circuit SO A Capability Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 Maximum Ratings vt c g r T, = 25°C to 150°C; RQE = 1 MS2 600 V v Continuous

RGE 17-18

Abstract: 12n60a IXSA12N60AU1 GE 100 v .018 12N60
Contextual Info: □ IXYS L o w V c e „ „ 'S E IXSA 12N60AU1 T with Diode VCES IC25 VCE sat 600 V 24 A 2.5 V Short C ircuit S O A C apability Preliminary data sheet Maximum Ratings Symbol Test C onditions VCES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i

IGBT 12n60a4D

Abstract: 12n60a4d 12N60A4D TRANSISTOR TA49371 HGTG12N60A4D TA49335 HGTP12N60A4D HGT1S12N60A4DS HGTG*N60A4D ta49337
Contextual Info: 12N60A4D, 12N60A4D, 12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 12N60A4D, 12N60A4D and 12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and

12n60a4

Abstract: IGBT 12n60a4 HGT1S12N60A4S HGTG12N60A4 12n60a HGT1S12N60A4S9A C110 HGTP12N60A4 TA49335 TB334
Contextual Info: 12N60A4, 12N60A4, 12N60A4S Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The 12N60A4, 12N60A4 and 12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input

12n60a

Abstract: UTC12N60 12N-60a 12N60 12N60B 12N60L 12N60-A 12N60-B
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

B1116

Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
Contextual Info: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40

12n60a4

Abstract: 12n60a4 pdf datasheet IGBT 12n60a4 HGT1S12N60A4S G12N60A4 HGT1S12N60A4S9A C110 HGTG12N60A4 HGTP12N60A4 TA49335
Contextual Info: 12N60A4, 12N60A4, 12N60A4S Data Sheet November 1999 File Number 600V, SMPS Series N-Channel IGBTs Features The 12N60A4, 12N60A4 and 12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input

12n60a4d

Abstract: IGBT 12n60a4D 12n60a 12n60a4 TA49371 TA49335 HGT1S12N60A4DS HGTG12N60A4D HGTP12N60A4D TB334
Contextual Info: 12N60A4D, 12N60A4D, 12N60A4DS Data Sheet October 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 12N60A4D, 12N60A4D and 12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and

12n60a4d

Abstract: IGBT 12n60a4D 12n60a4 12N60A4D TRANSISTOR TA49371 12n60a 12N60 HGT1S12N60A4DS HGT1S12N60A4DS9A
Contextual Info: 12N60A4D, 12N60A4D, 12N60A4DS Data Sheet November 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 12N60A4D, 12N60A4D and 12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and

12n60 dc

Abstract: 12n60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

12N60A4D

Abstract: IGBT 12n60a4D g12n60a4d 12n60a4 TA49371 HGTP12N60A4D TA49335 HGT1S12N60A4DS HGT1S12N60A4DS9A HGTG12N60A4D
Contextual Info: 12N60A4D, 12N60A4D, 12N60A4DS Data Sheet November 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 12N60A4D, 12N60A4D and 12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and

12n60a4

Abstract: IGBT 12n60a4 TP12N60A4 12n60a T1S12N60A4S 12N60 transistor BT 139 F applications note HGTG12N60A4
Contextual Info: 12N60A4, 12N60A4, HG 12N60A4S Data Sheet May 1999 File Number 600V, SM PS S e rie s N -C h a n n e l IG B T F e a tu re s The 12N60A4, 12N60A4 and 12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and

12n60a4

Abstract: IGBT 12n60a4 12n60a TA49335 hgtg12n60a4 SS LSE 0530 T1S12N60A4S
Contextual Info: 12N60A4, 12N60A4, HG 12N60A4S D ata S h eet M ay 1999 F ile N u m b er 600V, SMPS Series N-Channel IGBT Features The 12N60A4, 12N60A4 and 12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and

12N60A4

Abstract: IGBT 12n60a4 C110 HGT1S12N60A4S HGT1S12N60A4S9A HGTG12N60A4 HGTP12N60A4 TA49335 TB334 HGTG12N60A4 equivalent
Contextual Info: 12N60A4, 12N60A4, 12N60A4S Data Sheet August 2002 600V, SMPS Series N-Channel IGBTs Features The 12N60A4, 12N60A4 and 12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

12n60a

Abstract: 12N60 12N60L 12n60 dc 12n60b 12A 650V MOSFET 12N-60a power mosfet 200A 12N60L-x-TF3-T 12N60G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

BTS 3900 a

Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
Contextual Info: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device

40n60 igbt

Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263

12n60a4

Abstract: IGBT 12n60a4 12n60a HGTG12N60A4 12n60a4 pdf datasheet g12n60a4 HGT1S12N60A4S9A C110 HGT1S12N60A4S HGTP12N60A4
Contextual Info: 12N60A4, 12N60A4, 12N60A4S Data Sheet May 1999 File Number 600V, SMPS Series N-Channel IGBT Features The 12N60A4, 12N60A4 and 12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input

12N60A4D TRANSISTOR

Contextual Info: 12N60A4D, 12N60A4D, 12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 12N60A4D, 12N60A4D and 12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and

IGBT 12n60a4D

Contextual Info: 12N60A4D, 12N60A4D, 12N60A4DS Semiconductor F eb ru ary 1999 D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 12N60A4D, 12N60A4D and 12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and