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    12N60A4D TRANSISTOR Search Results

    12N60A4D TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    12N60A4D TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IGBT 12n60a4D

    Abstract: 12n60a4d 12N60A4D TRANSISTOR TA49371 HGTG12N60A4D TA49335 HGTP12N60A4D HGT1S12N60A4DS HGTG*N60A4D ta49337
    Text: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS 150oC. TA49335. TA49371. IGBT 12n60a4D 12n60a4d 12N60A4D TRANSISTOR TA49371 HGTG12N60A4D TA49335 HGTG*N60A4D ta49337 PDF

    12N60A4D TRANSISTOR

    Abstract: No abstract text available
    Text: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS 150oC. TA49335. TA49371. 12N60A4D TRANSISTOR PDF

    12N60A4D

    Abstract: IGBT 12n60a4D g12n60a4d 12n60a4 TA49371 HGTP12N60A4D TA49335 HGT1S12N60A4DS HGT1S12N60A4DS9A HGTG12N60A4D
    Text: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet November 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS 150oC. TA49335. TA49371. 12N60A4D IGBT 12n60a4D g12n60a4d 12n60a4 TA49371 TA49335 HGT1S12N60A4DS9A HGTG12N60A4D PDF

    12n60a4d

    Abstract: IGBT 12n60a4D 12n60a4 12N60A4D TRANSISTOR TA49371 12n60a 12N60 HGT1S12N60A4DS HGT1S12N60A4DS9A
    Text: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet November 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS 150oC. TA49335. TA49371. 12n60a4d IGBT 12n60a4D 12n60a4 12N60A4D TRANSISTOR TA49371 12n60a 12N60 HGT1S12N60A4DS9A PDF

    12n60a4d

    Abstract: IGBT 12n60a4D 12n60a 12n60a4 TA49371 TA49335 HGT1S12N60A4DS HGTG12N60A4D HGTP12N60A4D TB334
    Text: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet October 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS 150oC. TA49335. TA49371. 12n60a4d IGBT 12n60a4D 12n60a 12n60a4 TA49371 TA49335 HGTG12N60A4D TB334 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    IGBT 12n60a4D

    Abstract: No abstract text available
    Text: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Semiconductor F eb ru ary 1999 D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    OCR Scan     		HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS TA49335. TA49371. 1-800-4-HARRIS IGBT 12n60a4D PDF