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    12TQ040S Price and Stock

    Vishay Semiconductors VS-12TQ040S-M3

    DIODE SCHOTTKY 40V 15A TO263AB
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    DigiKey VS-12TQ040S-M3 Tube 4,449 1
    • 1 $1.56
    • 10 $1.054
    • 100 $1.56
    • 1000 $0.55602
    • 10000 $0.503
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    SMC Diode Solutions 12TQ040S

    DIODE SCHOTTKY 40V 15A D2PAK
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    DigiKey 12TQ040S Reel 8,000
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    • 10000 $0.30738
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    Vishay Semiconductors VS-12TQ040SPBF

    DIODE SCHOTTKY 40V 15A TO263AB
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    DigiKey VS-12TQ040SPBF Tube
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    Vishay Semiconductors VS-12TQ040SHM3

    DIODE SCHOTTKY 40V 15A TO263AB
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    DigiKey VS-12TQ040SHM3 Tube 1,000
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    • 1000 $0.74532
    • 10000 $0.74532
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    Vishay Semiconductors VS-12TQ040STRRHM3

    DIODE SCHOTTKY 40V 15A TO263AB
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    DigiKey VS-12TQ040STRRHM3 Reel 800
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    • 1000 $0.76513
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    Find more 12TQ040S price and stock on Findchips.com

    12TQ040S Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    12TQ040S International Rectifier Schottky Rectifier Original PDF
    12TQ040STR SMC Diode Solutions Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 40V 15A D2PAK Original PDF

    12TQ040S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VS-12TQ035S-M3, VS-12TQ040S-M3, VS-12TQ045S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 A FEATURES Base cathode 2 D2PAK • • • • 150 °C TJ operation Very low forward voltage drop High frequency operation High purity, high temperature epoxy


    Original     		PDF VS-12TQ035S-M3, VS-12TQ040S-M3, VS-12TQ045S-M3 J-STD-020, VS-12TQ. 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    D2PAK-6

    Abstract: 12TQ 12TQ045S 40HFL40S02 IRFP460
    Text: 12TQ035SPbF, 12TQ040SPbF, 12TQ045SPbF Vishay High Power Products Schottky Rectifier, 15 A FEATURES • 150 °C TJ operation Base cathode 2 • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical


    Original     		PDF 12TQ035SPbF, 12TQ040SPbF, 12TQ045SPbF 2002/95/EC AEC-Q101 18-Jul-08 D2PAK-6 12TQ 12TQ045S 40HFL40S02 IRFP460

    VS-12TQ045SPbF

    Abstract: 12TQ 12TQ045S 40HFL40S02 IRFP460
    Text: VS-12TQ035SPbF, VS-12TQ040SPbF, VS-12TQ045SPbF Vishay High Power Products Schottky Rectifier, 15 A FEATURES • • • • Base cathode 2 • 3 Anode 1 D2PAK N/C • • • 150 °C TJ operation Very low forward voltage drop High frequency operation High purity, high temperature epoxy


    Original     		PDF VS-12TQ035SPbF, VS-12TQ040SPbF, VS-12TQ045SPbF J-STD-020, 2002/95/EC AEC-Q101 VS-12TQ. 18-Jul-08 VS-12TQ045SPbF 12TQ 12TQ045S 40HFL40S02 IRFP460

    Untitled

    Abstract: No abstract text available
    Text: VS-12TQ035SPbF, VS-12TQ040SPbF, VS-12TQ045SPbF Vishay High Power Products Schottky Rectifier, 15 A FEATURES • • • • Base cathode 2 • 3 Anode 1 D2PAK N/C • • • 150 °C TJ operation Very low forward voltage drop High frequency operation High purity, high temperature epoxy


    Original     		PDF VS-12TQ035SPbF, VS-12TQ040SPbF, VS-12TQ045SPbF J-STD-020, 2002/95/EC AEC-Q101 VS-12TQ. 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: VS-12TQ035SPbF, VS-12TQ040SPbF, VS-12TQ045SPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 A FEATURES • 150 °C TJ operation Base cathode 2 • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy


    Original     		PDF VS-12TQ035SPbF, VS-12TQ040SPbF, VS-12TQ045SPbF J-STD-020, AEC-Q101 VS-12TQ. 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: VS-12TQ035S-M3, VS-12TQ040S-M3, VS-12TQ045S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 A FEATURES Base cathode 2 D2PAK • • • • 150 °C TJ operation Very low forward voltage drop High frequency operation High purity, high temperature epoxy


    Original     		PDF VS-12TQ035S-M3, VS-12TQ040S-M3, VS-12TQ045S-M3 J-STD-020, VS-12TQ. 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 A FEATURES Base cathode 2 D2PAK • • • • 150 °C TJ operation Very low forward voltage drop High frequency operation High purity, high temperature epoxy


    Original     		PDF VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3 J-STD-020, AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    12TQ

    Abstract: 12TQ045S 40HFL40S02 IRFP460
    Text: 12TQ.SPbF Vishay High Power Products Schottky Rectifier, 15 A FEATURES • 150 °C TJ operation Base cathode 2 Available • Very low forward voltage drop RoHS* • High frequency operation COMPLIANT • High purity, high temperature epoxy encapsulation for


    Original     		PDF 18-Jul-08 12TQ 12TQ045S 40HFL40S02 IRFP460

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-21023 rev. A 06/06 12TQ.SPbF SCHOTTKY RECTIFIER 15 Amp IF AV = 15Amp VR = 35/ 45V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 15 A 35 / 45 V waveform VRRM range IFSM @ tp = 5 s sine


    Original     		PDF PD-21023 15Amp 08-Mar-07

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    12TQ

    Abstract: 12TQ035S 12TQ040S 12TQ045S 40HFL40S02 IRFP460
    Text: 12TQ.S Vishay High Power Products Schottky Rectifier, 15 A FEATURES • 150 °C TJ operation Base cathode 2 • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance


    Original     		PDF 18-Jul-08 12TQ 12TQ035S 12TQ040S 12TQ045S 40HFL40S02 IRFP460

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    PD-21023

    Abstract: D2PAK-6 12TQ 12TQ045S 40HF P460 SMD-220
    Text: Bulletin PD-21023 rev. A 06/06 12TQ.SPbF SCHOTTKY RECTIFIER 15 Amp IF AV = 15Amp VR = 35/ 45V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 15 A 35 / 45 V waveform VRRM range IFSM @ tp = 5 s sine


    Original     		PDF PD-21023 15Amp D2PAK-6 12TQ 12TQ045S 40HF P460 SMD-220

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-21023 05/05 12TQ.SPbF SCHOTTKY RECTIFIER 15 Amp IF AV = 15Amp VR = 35/ 45V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 15 A 35 / 45 V waveform VRRM range IFSM @ tp = 5 µs sine VF @ 15 Apk, TJ = 125°C


    Original     		PDF PD-21023 15Amp O-220

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


    Original     		PDF MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    mbrf1060ctl

    Abstract: No abstract text available
    Text: Schottky Rectifiers Peak Inverse Voltage VRWM Max. Average Forward Current (Io) Max. Reverse Leakage Current (IR) Max. Forward Voltage Drop (VF) Max. Junction Capacitance (Cj) (A) Max. Forward Surge Current (IFSM) (A) (V) 30 (mA) (V) (pF) 0.2 4 0.0005 1


    Original     		PDF OD-123 BAT54W OT-323 BAT54WS BAT54A OT-23 BAT54C BAT54S mbrf1060ctl

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


    Original     		PDF MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100