13 W TRANSISTOR Search Results

Contextual Info: 1N4743A 13 V - 5 A - 1 W - Glass Passivated Junction Silicon Zener Diode 0.80 Diodes . Page 1 of 1 Enter Your Part # Home Part Number: 1N4743A Online Store 1N4743A Diodes 13 V - 5 A - 1 W - Glass Passivated Junction Silicon Zener Transistors Diode Integrated Circuits

sot123 package

Abstract: BLF543 BLF221 sot 123 blf246b flange SOT-123
Contextual Info: 65 RF/Microwave Devices RF Power MOS Transistors cont. Type No. Package Outline Load Power (W) V DS (V) f (MHz) Source Gain (dB) 28 28 28 28 28 50 28 28 50 28 50 28 50 28 50 175 175 175 175 175 108 175 108 108 108 108 175 108 175 108 14 typ 13 13 13 14 19 typ

CFL inverter circuit schematic diagram

Abstract: cfl circuit diagram of 12 volts 3 CFL inverter circuit schematic diagram cfl ballast cfl circuit diagram AN98091 CE167V cfl circuit diagram of 6 volts PHU2N60E BALLAST CFL
Contextual Info: AN98091 CFL 13 W demo PCB with UBA2021 for integrated lamp-ballast designs Rev. 02 — 29 December 2008 Application note Document information Info Content Keywords CFL ballast, UBA2021, compact, half-bridge, driver circuit Abstract A description is given of a 13 W electronic CFL ballast SMD demo board

RL12

Abstract: RL34 telefunken tdr
Contextual Info: e5130 Low Voltage CMOS Driver Circuit Description The e5130 contains 4 independent driver outputs with an ON resistance of typ. 25 W 15 W tor the P-channel output transistors and typ. 20 W (13 W) for the N-channel output transistors; at a supply voltage of 1.5 V (3 V). To

2594

Abstract: RL12 RL34
Contextual Info: e5130 Low Voltage CMOS Driver Circuit Description The e5130 contains 4 independent driver outputs with an ON resistance of typ. 25 W 15 W tor the P-channel output transistors and typ. 20 W (13 W) for the N-channel output transistors; at a supply voltage of 1.5 V (3 V). To

BU102

Abstract: BDX71 40636 2N3055V BSV95 BDX73 BSX27 BU100A BD663B transistor bu102
Contextual Info: SG S-ATES Semiconductors T ran sistors-N P N N P N Switching Transistors C ode o < < o w REFERENCE T A B LE lc Range m A Is 13 13 13 BSV90 B SV 9 1 BSV92 BSV95 BSX20 13.5 15 15 50 15 1-100 10-100 1-100 10-800 1-500 B SX 2 6 B SX 2 7 BSX28 BSX30 BSX32 15

Heatsinks

Abstract: picot
Contextual Info: Aufsteckkühlkörper Clip-on Heatsinks Dissipateurs enfichables 0,6 8,5 13 16 10 27 FK 243 MI 247 O 20 1,2 18,7 K/W ohne Lötfahne without solder lug sans paillette picot 0,6 13 8,5 3,2 16 10 0,6 27 FK 243 MI 247 H 20 1,2 19 K/W with solder lug for horizontal installation

Contextual Info: Aufsteckkühlkörper Clip-on heatsinks Dissipateurs enfichables C 0,6 8,5 13 16 10 27 FK 243 MI 247 O 20 1,2 18,7 K/W ohne Lötfahne without solder lug sans paillette picot 0,6 13 8,5 3,2 16 10 0,6 27 FK 243 MI 247 H 20 1,2 19 K/W with solder lug for horizontal installation

telefunken tdr

Abstract: RL12 RL34 MP114
Contextual Info: e5130 TELEFUNKEN Semiconductors Low Voltage CMOS Driver Circuit Description The e5130 contains 4 independent driver outputs with an ON resistance of typ. 25 W 15 W tor the P-channel output transistors and typ. 20 W (13 W) for the N-channel output transistors; at a supply voltage of 1.5 V (3 V). To obtain a

2SC5053

Abstract: W0401
Contextual Info: h 2SC5053 /'Transistors i~M NPN v U = 3 > h -7 Epitaxial Planar NPN Silicon Transistor O C / * C f C O » w w O w ^ O /Medium Power Amp. • 1 $ £ 13/Dimensions Unit : mm) 1) P c= 2 W T'£>3 (40X40X0.7mm iz 7 5 7 ? & m m )o 2) Low Vce ( s a t) = 0 .1 2V

Contextual Info: 2N412 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)13 I(C) Max. (A)15m Absolute Max. Power Diss. (W)80m Maximum Operating Temp (øC)71õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)13 h(FE) Min. Current gain. h(FE) Max. Current gain.

fw26025

Abstract: FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH
Contextual Info: Power bipolar transistors TO-264 Device type NPN VCEO [V] PNP HD1530JL* HD1750JL* 700 800 VCBO VCES VCEV [V] IC [A] 1500 1700 26 24 hFE @ IC VCE Ptot [W] 200 200 VCE sat @ IC IB Application Min Max [A] [V] [V] [A] [mA] 5.5 5.5 9 9.5 13 12 5 5 2 3 13 12 3250

Contextual Info: A U-Extruded heatsinks art. no. Rth [K/W] B 25 9 20 15 15 1,5 10 5 C 12 SK 12 . 25 50 100 [mm] 75 . please indicate: 1000 mm art. no. D Rth [K/W] 25 14 20 15 13 1,5 10 E 5 17 25 50 75 100 [mm] 100 150 200 [mm] SK 13 . please indicate: F . 25 35 mm

QS 100 NPN Transistor

Abstract: PG1157 PG1158 PG1159 PG1160 PG1161 PG1162 PG1163 PG1164 PG1165
Contextual Info: .0043592 A P I ELECTRONICS TN f. A P I ELECTRONICS INC A IA 0089 13 / -o fj-/ f n D eT| Ö D E S T E DDGODflT 1 INTERIM BULLETIN Subject to Revision W ithout Notice -July 15, 1971 PIRCO tñ r i POWER TRANSISTOR ENGINEERING BULLETIN S s X 1 I* W w ELECTBOniCS inc.

FAN CONTROL BY USING THERMISTOR lm358

Abstract: w83391ts NPN transistor 2n 3904 temperature sensor LM358 temperature controlled fan FAN transistor 3904
Contextual Info: W83L786NR W83L786NG Nuvoton H/W Monitoring IC W83L786NR/ W83L786NG W83L786NR Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB MAIN CONTENTS Pin 10: from Vram_SEN to VTIN1 Pin 11: from Vcore_SEN to D1 P.13 10/15/04 0.6 N/A Pin 13: from Vref to Vcore_SEN

CTS 100-20

Abstract: old ic clock ha 1555 iw 1677
Contextual Info: 19-1124; Rev 0; 9/96 AI/JXIVM L o w - P o w e r , 13-Bi t V o l t a g e - O u t p u t DAC w i t h Se r i a l I n t e r f a c e Features The MAX535 combines a low-power, voltage-output, 13-bit digital-to-analog converter DAC and a precision output amplifier in an 8-pin package. The am plifier’s

W83L786NG

Abstract: pin diagram of op-amp ic 741 opamp Lm358 pin function VR2B transistor c 839
Contextual Info: W83L786NR W83L786NG Winbond H/W Monitoring IC W83L786NR/ W83L786NG W83L786NR Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB MAIN CONTENTS Pin 10: from Vram_SEN to VTIN1 Pin 11: from Vcore_SEN to D1 P.13 10/15/04 0.6 N/A Pin 13: from Vref to Vcore_SEN

PWM 12V fan speed control circuit winbond

Abstract: temperature control using lm358
Contextual Info: W83L786NR W83L786NG Winbond H/W Monitoring IC W83L786NR/ W83L786NG W83L786NR Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB MAIN CONTENTS Pin 10: from Vram_SEN to VTIN1 Pin 11: from Vcore_SEN to D1 P.13 10/15/04 0.6 N/A Pin 13: from Vref to Vcore_SEN

Contextual Info: 19-1124; Rev 1; 12/96 A lilX IA I L o w - P o w e r , 13-Bi t V o l t a g e - O u t p u t DACs w i t h Se r i a l I n t e r f a c e Features The MAX535/MAX5351 com bine a low-power, voltageoutput, 13-bit digital-to-analog converter DAC and a precision output am plifier in an 8-pin pMAX or DIP pack­

AM0912-080

Abstract: S042
Contextual Info: AM0912-080 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 90 W MIN. WITH 13 dB GAIN BANDWIDTH 225 MHz

AM0912-080

Abstract: S042 13w 90 AM0912-08
Contextual Info: AM0912-080 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 90 W MIN. WITH 13 dB GAIN BANDWIDTH 225 MHz

W83L78

Abstract: W83L786NG W83L786NR
Contextual Info: W83L786NR W83L786NG Winbond H/W Monitoring IC W83L786NR/NG PRELIMINARY W83L786NR Data Sheet Revision History Pages Dates Version Version on Web Main Contents Pin 10: from Vram_SEN to VTIN1 Pin 11: from Vcore_SEN to D- 1 P.13 10/15/04 0.6 N/A Pin 13: from Vref to Vcore_SEN

HF220-50

Abstract: ASI10614
Contextual Info: HF220-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF220-50 is a 50 V epitaxial silicon NPN transistor, designed for SSB communications. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 13 dB Typical at 220 W/30 MHz • IMD3 = -30 dBc Max. at 220 W PEP

Contextual Info: MRF429 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF429 is Designed for High voltage applications up tp 30 MHz PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A C E FULL R • PG = 13 dB min. at 150 W/30 MHz • IMD3 = -32 dBc max. at 150 W PEP