13.575 Search Results

Contextual Info: ECX-6306-13.5757M TR Pb RoHS PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6306 -13.5757M TR Series Ecliptek Custom Crystal Packaging Options Tape & Reel

Contextual Info: ECX-6307-13.5756M Pb RoHS PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6307 -13.5756M Series Ecliptek Custom Crystal Nominal Frequency 13.5756MHz

Contextual Info: ECX-6306-13.5757M Pb RoHS PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6306 -13.5757M Series Ecliptek Custom Crystal Nominal Frequency 13.5757MHz

Contextual Info: 2/7 TAI-SAW TECHNOLOGY CO., LTD. Crystal Unit SMD 5.0x3.2 13.57562MHz MODEL NO.: TZ1677A REV. NO.: 1 Revise: Rev. Rev. Page Rev. Account Date 1 N/A Initial release 6/11/09’ N/A TAI-SAW TECHNOLOGY CO., LTD. Ref. No. Revised by Ann Liu TST DCC Release document

Contextual Info: ECX-6307-13.5756M TR Pb RoHS PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6307 -13.5756M TR Series Ecliptek Custom Crystal Packaging Options Tape & Reel

Contextual Info: ATF-50189 Enhancement Mode[1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Features Avago Technologies’s ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET packaged in a low cost surface mount SOT89[3] package. The combination of low

BY393

Abstract: BY339 I32005 t3 055e 40555 6628e 12JAN 6819e BY294 SP320
Contextual Info: Product Characterization Report for the SP320 Family of Products Prepared By: Salvador Wu & Greg West Date: March 1, 2007 SP320 Product Family Characterization Report Table of Contents Section Introduction Characterization Procedure Data Summary for Key Parameters

58550

Abstract: 13.5672 09861 93S360 13.575600 13.575 QUARTZ 20,25 MHZ 09864
Contextual Info: Quartz Crystal Units 93SMX STANDARD SMD CRYSTALS 93SMX STANDARD FREQUENCIES XTAL STANDARD SPECIFICATIONS 1. Package type 2. Frequency range 3. Frequency tolerance 4. Temperature stability referred to ＋25˚C 5. Load capacitance (CL) 6. Shunt capacitance (Co)

TQ5300

Abstract: TQG 14.31818 kony 8.000000 kony 30mhz crystal oscillator HC49U70 SUNNY 4.194304 KONY hc49s 6MHZ HC49U 16.000000 Mhz kony vcxo KONY crystal
Contextual Info: Ordering information Return to product overview Resonator SMD All information subject to change Type CTT CV-MX Tape & Reel RoHS Conform External Dimensions Unit: mm Specifications Holder Type CTT CV-MX with Tape & Ree Frequency Range 10.000000 MHz internal capacitance C1, C2

pic32 spi dma

Abstract: dspic example codes dci PIC24HJ128GP206 microchip pic32 spi dma example AD33b PIC24HJ64GP206 PIC24HJ64GP210 PIC24HJ64GP506 PIC24HJ64GP510 dspic example codes i2c C30
Contextual Info: PIC24HJXXXGPX06/X08/X10 PIC24HJXXXGPX06/X08/X10 Rev. A2/A3/A4 Silicon Errata The PIC24H Rev. A2/A3/A4 devices you received were found to conform to the specifications and functionality described in the following documents: • DS70175 – “PIC24H Family Data Sheet”

Contextual Info: NTC thermistors for temperature measurement Glass-encapsulated sensors with insulation Series/Type: B57551G1 Date: August 2014 EPCOS AG 2014. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Contextual Info: Atmel M90E25 Single-Phase High-Performance Wide-Span Energy Metering IC PRELIMINARY DATASHEET FEATURES Metering Features • Metering features fully in compliance with the requirements of IEC62052-11 and IEC62053-21; applicable in class 1 or class 2 single-phase watt-hour meter.

Contextual Info: NTC thermistors for temperature measurement Glass-encapsulated sensors with insulation Series/Type: B57541G1 Date: August 2014 EPCOS AG 2014. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

AMMC-6233

Abstract: AV02-0312EN 30458 A004R 6233
Contextual Info: AMMC-6233 18 to 32 GHz GaAs Low Noise Amplifier Data Sheet Chip Size: 1900 x 800 µm 74.8 x 31.5 mils Chip Size Tolerance: ± 10 µm (± 0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) RF Pad Dimensions: 110 x 90 µm (4.33 x 3.54 mils) DC Pad Dimensions: 100 x 100 µm (3.94 x 3.94 mils)

DS70191

Abstract: AD33b dspic33f example codes i2c dspic33f slave example codes i2c dspic33f example codes QEI dspic example codes i2c C30 PWM control dsPIC 33f PWM control dsPIC 33f in C DS70165 pic32 spi dma
Contextual Info: dsPIC33FJXXXMCX06/X08/X10 dsPIC33FJXXXMCX06/X08/X10 Rev. A2/A3/A4 Silicon Errata The dsPIC33FJXXXMCX06/X08/X10 Rev. A2/A3/A4 devices you received were found to conform to the specifications and functionality described in the following documents: Silicon Errata Summary

13.575

Abstract: 24.000
Contextual Info: FEATURES AND SPECIFICATIONS Features and Benefits • Sizes 6 to 30 circuits ■ For 0.20mm thick FPC ■ Metal solder tabs provide PCB hold-down and strain relief for SMT tails Reference Information Packaging: Embossed tape Designed In: Millimeters Electrical

74613

Abstract: B1004-BD TS3332LD XB1004-BD 96330
Contextual Info: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004-BD June 2007 - Rev 12-Jun-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias +19.0 dBm P1dB Compression Point at Power Bias

ca3104e

Abstract: ca3104
Contextual Info: m H U V A R R CA3194 I S S E M I C O N D U C T O R Single Chip PAL Luminance/Chroma Processor March 1993 Description Features All M L Luminance and Chrominance Process­ ing Circuitry on a Single Chip In a 24-Lead Plastic Package The Harris CA3194E* is a silicon monolithic integrated circuit

Contextual Info: MV8860 r LE wwC T IV/IOC Semiconductors v -l v u MV8860 DTMF DECODER The MV8860 d e te cts and decodes a lM 6 DTMF tone pairs. T h e device a ccepts th e high group and low group square wave signals from a DTMF filte r M V8865 and p ro ­ vides a 3-state buffered 4-bit binary outp ut. The clo c k sig­

B1004-BD

Abstract: TS3332LD XB1004-BD
Contextual Info: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004-BD June 2007 - Rev 12-Jun-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias +19.0 dBm P1dB Compression Point at Power Bias

NTC G540

Abstract: B57540G1103 B57540G0502 G154 NTC G1540 B57540G1104 B57540 B57540G 233-11
Contextual Info: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: B57540G, B57540G1 Date: February 2009 EPCOS AG 2009. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

NTC 100-11

Abstract: 100-11 thermistor
Contextual Info: NTC thermistors for temperature measurement Glass-encapsulated sensors with insulation Series/Type: B57551G, B57551G1 Date: March 2013 EPCOS AG 2013. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

NTC 100-11

Abstract: B57540G1503 B57540G1103 100-11 thermistor B57540G1502 B57540G1
Contextual Info: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: B57540G1 Date: April 2013 EPCOS AG 2013. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

ub 6351

Abstract: nec 8339 2SC5668 nec 2565 904 2SC5668-T1 MARKING UB
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5668 NPN SILICON RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA