13009 ST Search Results

e13009

Abstract: Fairchild e13009 transistor E 13009 E13009 F e 13009 f e13008 E-13009 fairchild e13009 application E13009 2 fairchild 13009
Contextual Info: KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted

mje13008

Abstract: tr 13009 13009 MJE13009 fairchild semiconductor
Contextual Info: MJE13008/13009 MJE13008/13009 High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted

13009

Abstract: tr 13009 13009 H transistor 13009 KSE13009 kse13009 h2 all transistor 13009 p 13009 kse13008 transistor d 13009
Contextual Info: KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted

MJE13008

Abstract: 13009
Contextual Info: MJE13008/13009 MJE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted

*E13009F

Abstract: tr 13009 all transistor 13009 transistor 13009 p 13009 13009 NPN Transistor KSE13009FTU 13009 cross reference 13009 13009 TRANSISTOR
Contextual Info: KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted

13009

Abstract: SWITCHING SYSTEMS INTERNATIONAL Kse13009
Contextual Info: KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted

transistor 13009

Abstract: kse13009 h2 13009 NPN Transistor 13009 power transistor cross reference 13009 transistor switch 13009 KSE13009
Contextual Info: KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted

all transistor 13009

Abstract: transistor 13009 13009 13009 TRANSISTOR equivalent 13009 TRANSISTOR transistor switch 13009 npn 13009 13009 H 13009 NPN Transistor 13009 silicon
Contextual Info: KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13008 : KSE13009 Collector Emitter Voltage : KSE13008

transistor E 13009

Abstract: all transistor 13009 transistor d 13009 transistor 13009 e 13009 f transistor EN 13009 13009 TRANSISTOR 13009 2 transistor D 13009 npn 13009
Contextual Info: NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13008 : KSE13009 Rating Unit VcBO

transistor E 13009

Abstract: D 13009 K E13009 transistor 13009 transistor b 595 transistor d 13009 E 13009 L e 13009 f J 13009 - 2 E 13009 2
Contextual Info: KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Rating Symbol Unit : K S E 1 3008 VcBO

e13009

Abstract: transistor 13009 transistor switch 13009 13009 TRANSISTOR 13009 H 13009 NPN Transistor power switching transistor 13009 13009 13009* transistor npn 13009
Contextual Info: NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Sw itching R egulator and M otor Control ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage : KSE13008 : KSE13009 Rating Unit

e 13009 d

Abstract: transistor E 13009 transistor E 13009 l E 13009 2
Contextual Info: NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION TO -220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector Base Voltage : : C ollector Em itter Voltage:

transistor E 13009

Abstract: transistor d 13009 transistor 13009 D 13009 K 13009 TRANSISTOR E 13009 L p 13009 e 13009 f e13009 transistor E 13009 l
Contextual Info: KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : K S E 13008 : KSE13009 Collector Emitter Voltage: KSE13008

Contextual Info: KSM13008/13009 TO-220 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1.Base NPN Silicon Transisor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO

Contextual Info: 13009 ST AN DARD • · TO-220 A Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current DC IC 12 A TA=25 PC 3 W TC=25 PC 100 W Junction Temperature TJ 150 Storage Temperature TSTG -55-150 Collector Dissipation

D 13009 K

Abstract: e 13009 f E 13009 2 J 13009 - 2 13009 D 13009 j 13009 13009 H npn 13009 13009 applications
Contextual Info: TELEFUNKEN ELECTRONIC 1 ?E ]> • a^SOCHb OOO'ifc.M1} 0 TE 13008- TE 13009 T m iilF ty ilfiK lK l e le c tro n ic C rut*« Technotogw* r - 35-13 Silicon NPN Power Transistors Applications: Switching mode power supply, motor control and electronic ballast Features:

13009 silicon

Abstract: 13009 TRANSISTOR MJE-13009 transistor 13009 EB 13009 13009 L T 13009 MJE13009 transistor MJE13009
Contextual Info: rZ Z S G S -T H O M S O N * 7# » i» !© « ! M JE 13009 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTVPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec T0-220 plastic package, intended for use in motor controls,

PHE13009

Contextual Info: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The P H E 13009 is a silicon npn pow er sw itching tra n sisto r in the T 0 2 2 0 A B envelope intended fo r use in high freq ue n cy electronic lighting ballast applications, converters, inverters, sw itching regulators, m otor control system s,

E 13009 2

Abstract: transistor E 13009 EB 13009 D e 13009 l p 13009 D 13009 K transistor mje EB 13009 e 13009 d transistor E 13009 l
Contextual Info: / b aS3T31 001=113? 1 DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V ESE D T *" 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended fo r use

transistor E 13009

Abstract: transistor d 13009 D 13009 K E 13009 L transistor 13009 e 13009 f J 13009 - 2 tr 13009 transistor MJE 13009 13008 TRANSISTOR
Contextual Info: i r ^53^31 D O n iS ? 1 D E V EL O P M EN T DATA MJE 13008 MJE 13009 This data she« contains advance information and specifications are subject to change without notice. N AMER P H I L I P S / D I S C R E T E ESE D -r-3 3 -1 3 SILICON DIFFUSED POWER TRAN SISTO RS

SR 13009

Abstract: E 13009 e13009 transistor sr 13009 transistor E 13009 D 13009 K 13008 TRANSISTOR E 13009 L e 13009 f J 13009 - 2
Contextual Info: Tem ic TE13008 • TE13009 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • High reverse voltage • Power dissipation Pu,| = 100 W • Glass passivation • Short switching times Applications Electronic lamp ballast circuits

CI 13007

Abstract: bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471
Contextual Info: {ZT SGS-THOMSON Ä 7 # MD K I[LiOT©liî!IDËi CONSUMER RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA

transistor E 13009

Abstract: 13009 H p 13009 13009 L transistor d 13009 all transistor 13009 e 13009 l ST13009 E 13009 e 13009 f
Contextual Info: ST13009 High voltage fast-switching NPN power transistor Features • Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications 3 1 ■ 2 Switch mode power supplies

kovar

Abstract: RA713
Contextual Info: REVISIONS 10UTLINE_SM3 ECN 10885» RELEASE A CAUTION TXIS ASSEMBLY CONTAINS PARTS SENSITIVE TO DAMAGE BY ELECTRO­ STATIC DISCHARGE ESD . USE ESD PRECAUTIONARY PROCEDURES WHEN TOUCHING, REMOVING OR INSERTING. 7 /5 1 /0 1 RA 7 /3 1 /0 1 ESN 12375, UPDATE PIN 1 A 2 INFORMATION