13109 Search Results
13109 Datasheets (6)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|
13109.0 | CONTA-CLIP | PLUG-IN CONNECTOR | Original | 251.05KB | |||
131090 |
![]() |
Ring and Spade Tongue Terminals; SLOTTED RING ( AMP ) | Scan | 64.02KB | 1 | ||
1310901-1 |
![]() |
SMB; C65N07G999X ( AMP ) | Scan | 35.83KB | 1 | ||
131092-HMC924LC5 | Hittite Microwave | RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD HMC924LC5 | Original | 14 | |||
131092-HMC925LC5 | Hittite Microwave | RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD HMC925LC5 | Original | 10 | |||
131098 |
![]() |
Uncategorized - Miscellaneous - HOUSING BLOCK 4 P | Original | 19.98KB |
13109 Price and Stock
Wurth Elektronik 830108213109WE-XTAL QUARTZ CRYSTAL 38.4 MHZ; |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
830108213109 | Digi-Reel | 2,406 | 1 |
|
Buy Now | |||||
TE Connectivity 82A0113-10-9-F874HOOK-UP STRND 10AWG WHITE FEET |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
82A0113-10-9-F874 | 2,122 | 1 |
|
Buy Now | ||||||
![]() |
82A0113-10-9-F874 |
|
Buy Now | ||||||||
Molex 0901310928CONN HEADER VERT 16POS 2.54MM |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
0901310928 | Tray | 1,672 | 1 |
|
Buy Now | |||||
Molex 0901310927CONN HEADER VERT 14POS 2.54MM |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
0901310927 | Tray | 929 | 1 |
|
Buy Now | |||||
Molex 0901310930CONN HEADER VERT 20POS 2.54MM |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
0901310930 | Tray | 822 | 1 |
|
Buy Now |
13109 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: Doc No. TT4-EA-13109 Revision. 4 Product Standards Zener Diode DZ2W04300L DZ2W04300L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ24043 in Mini2 type package 1.6 0.13 2 • Features 2.6 3.5 Excellent rising characteristics of zener current Iz |
Original |
TT4-EA-13109 DZ2W04300L DZ24043 UL-94 | |
MB85RC64PNF-G-JNERE1Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13109-4E FRAM MB85RC64 MB85RC64 is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory, |
Original |
NP05-13109-4E MB85RC64 MB85RC64 64K-bits MB85RC64PNF-G-JNERE1 | |
MB85RC64PNFContextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13109-2E Memory FRAM CMOS 64 K 8 K x 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the |
Original |
DS05-13109-2E MB85RC64 MB85RC64 MB85RC64PNF | |
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13109-1E Memory FRAM CMOS 64 K 8 K x 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the |
Original |
DS05-13109-1E MB85RC64 MB85RC64 | |
Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13109-6E FRAM MB85RC64 MB85RC64 is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory, |
Original |
NP05-13109-6E MB85RC64 MB85RC64 64K-bits | |
Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13109-2E FRAM MB85RC64 MB85RC64 is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory, |
Original |
NP05-13109-2E MB85RC64 MB85RC64 64K-bits | |
BD 4914
Abstract: BD 4908 fm metal case REGULATOR IC 7812 pin diagram REGULATOR IC 7809 MSP 34250 D 8227 audio amplifier bd 9969 analog frequency divider ic 200 khz crystal Nippon capacitors
|
OCR Scan |
MC13109/D 1PHX36041-Q BD 4914 BD 4908 fm metal case REGULATOR IC 7812 pin diagram REGULATOR IC 7809 MSP 34250 D 8227 audio amplifier bd 9969 analog frequency divider ic 200 khz crystal Nippon capacitors | |
OZ 9972
Abstract: OZ 9966 BD 4914 RTA 16065 LA 7809 ite 8892 BUL 380 SN 49710 LT 7207 IC 4081
|
OCR Scan |
||
14 pin LCD monocrome connector
Abstract: lcd ramdac capacitor bc series 10uf/63V toshiba lcd power board schematic LCD dots toshiba 320X240 LP29 CORE SED1354F hitachi lcd backlight schematic lcd 240 128 ts SED1354
|
Original |
MF1072-02 inte64862355 SED1354 SED1354F0A SED1354F1A SED1354F2A 14 pin LCD monocrome connector lcd ramdac capacitor bc series 10uf/63V toshiba lcd power board schematic LCD dots toshiba 320X240 LP29 CORE SED1354F hitachi lcd backlight schematic lcd 240 128 ts | |
Contextual Info: MF1501-02 IEEE1394 Controller S1R72805 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. |
Original |
MF1501-02 IEEE1394 S1R72805 E-08190 S1R72805F00A | |
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13109–9E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the |
Original |
MB85RC64 MB85RC64 | |
Contextual Info: LTC2326-18 18-Bit, 250ksps, ±10.24V True Bipolar, Pseudo-Differential Input ADC with 95dB SNR FEATURES DESCRIPTION 250ksps Throughput Rate n ±5LSB INL Max n Guaranteed 18-Bit No Missing Codes n Pseudo-Differential Inputs n True Bipolar Input Ranges ±6.25V, ±10.24V, ±12.5V |
Original |
LTC2326-18 18-Bit, 250ksps, 250ksps 18-Bit 111dB 20ppm/Â 16-Lead LTC6655 48V/1 | |
E0C63158
Abstract: E0C63256 E0C63358 S1C63158 IOC41
|
Original |
MF1085-03 S1C63158 S1C63158 E0C63158 E0C63256 E0C63358 IOC41 | |
60N01
Abstract: E0C6001 E0C6002 E0C6003 E0C6004 S1C60N04 epson Service Manual S1C6200B
|
Original |
MF1112-02 S1C60N04 S1C60N04 60N01 E0C6001 E0C6002 E0C6003 E0C6004 epson Service Manual S1C6200B | |
|
|||
Q13MC146
Abstract: 60N01 E0C6001 E0C6002 E0C6003 E0C6004 S1C62740 working of TRIMMER capacitor
|
Original |
MF654-05 S1C62740 S1C62740 Hardware/S1C62740 Q13MC146 60N01 E0C6001 E0C6002 E0C6003 E0C6004 working of TRIMMER capacitor | |
tip off 0401 transistor using circuit free energy
Abstract: ghr 87 diode transistor 5-2736 E0C63158 E0C63256 E0C63358 S1C05251 AC 121 V TPI 121
|
Original |
MF1329-02 S1C05251 S1C05251 tip off 0401 transistor using circuit free energy ghr 87 diode transistor 5-2736 E0C63158 E0C63256 E0C63358 AC 121 V TPI 121 | |
Q13MC146
Abstract: 60N01 E0C6001 E0C6002 E0C6003 E0C6004 S1C62920 irf 560 7 SEGMENT DISPLAY 4511
|
Original |
MF794-03 S1C62920 S1C62920 Q13MC146 60N01 E0C6001 E0C6002 E0C6003 E0C6004 irf 560 7 SEGMENT DISPLAY 4511 | |
470M
Abstract: VLP5610 VLP5614 VLP5610T-100MR65 VLP5610T-150MR52 VLP5610T-220MR45 VLP5610T-2R7M1R0 VLP5610T-330MR36 VLP5610T-470MR29 VLP5610T-4R7MR90
|
Original |
VLP5610 VLP5610T-2R7M1R0 VLP5610T-4R7MR90 VLP5610T-6R8MR80 VLP5610T-100MR65 VLP5610T-150MR52 VLP5610T-220MR45 VLP5610T-330MR36 VLP5610T-470MR29 VLP5614T-3R3M1R2 470M VLP5614 VLP5610T-100MR65 VLP5610T-150MR52 VLP5610T-220MR45 VLP5610T-2R7M1R0 VLP5610T-330MR36 VLP5610T-470MR29 VLP5610T-4R7MR90 | |
nec V850e2m manual
Abstract: v850E2M architecture v850e2 architecture
|
Original |
V850E2/PG4-L R01UH0336EJ0102 nec V850e2m manual v850E2M architecture v850e2 architecture | |
BGF901-20Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF901-20 GSM900 EDGE power module Product specification 2003 Jun 13 Philips Semiconductors Product specification GSM900 EDGE power module BGF901-20 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of |
Original |
M3D737 BGF901-20 GSM900 SCA75 613524/01/pp12 | |
60N01
Abstract: E0C6001 E0C6002 E0C6003 E0C6004 S1C62N33 4K031 s1c62a33
|
Original |
MF633-04 S1C62N33 S1C62N33 Hardware/S1C62N33 60N01 E0C6001 E0C6002 E0C6003 E0C6004 4K031 s1c62a33 | |
60N01
Abstract: E0C6001 E0C6002 E0C6003 E0C6004 S1C60N11
|
Original |
MF1190-02 S1C60N11 S1C60N11 60N01 E0C6001 E0C6002 E0C6003 E0C6004 | |
MF652-07
Abstract: e81h MF652 E86H epson c244 F42H HX 030 IC HP V5 Q13MC146 SRM2064 60N01
|
Original |
MF652-07 S1C62440/624A0/624C0/62480 S1C62440/624A0/624C0/62480 MF652-07 e81h MF652 E86H epson c244 F42H HX 030 IC HP V5 Q13MC146 SRM2064 60N01 | |
60N01
Abstract: E0C6001 E0C6002 E0C6003 E0C6004 S1C6S480 F63H SVC1
|
Original |
MF1050-02 S1C6S480 S1C6S480 60N01 E0C6001 E0C6002 E0C6003 E0C6004 F63H SVC1 |