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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-6v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00013-6v0-E
MB85RC64V
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13109–9E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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MB85RC64
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MB85RC64PNF-G-JNERE1
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13109-4E FRAM MB85RC64 MB85RC64 is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,
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NP05-13109-4E
MB85RC64
MB85RC64
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MB85RC64PNF-G-JNERE1
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13109–7E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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MB85RC64
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-5v0-E Memory FRAM 64 K 8 K 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00013-5v0-E
MB85RC64V
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Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00014-3v0-E FRAM MB85RC64V MB85RC64V is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,
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NP501-00014-3v0-E
MB85RC64V
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MB85RC64PNF
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13109-2E Memory FRAM CMOS 64 K 8 K x 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS05-13109-2E
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13109-1E Memory FRAM CMOS 64 K 8 K x 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS05-13109-1E
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13109–3E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming
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MB85RC64
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MB85RC64V
Abstract: MB85RC64VPNFG-JNERE1
Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00014-0v01-E FRAM MB85RC64V MB85RC64V is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,
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NP501-00014-0v01-E
MB85RC64V
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MB85RC64VPNFG-JNERE1
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13109–8E Memory FRAM 64 K 8 K 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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MB85RC64
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2006FUJITSU
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-5v0-E Memory FRAM 64 K 8 K 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00013-5v0-E
MB85RC64V
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-0v02-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00013-0v02-E
MB85RC64V
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Untitled
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Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13109-6E FRAM MB85RC64 MB85RC64 is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-2v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00013-2v0-E
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13109–4E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming
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MB85RC64
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Untitled
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13109–5E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming
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MB85RC64
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Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13109-2E FRAM MB85RC64 MB85RC64 is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,
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NP05-13109-2E
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MB85RC64
64K-bits
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-3v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00013-3v0-E
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MB85RC64A
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00019-1v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64A • DESCRIPTION The MB85RC64A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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MB85RC64
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00019-2v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64A • DESCRIPTION The MB85RC64A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-0v01-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00013-0v01-E
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MB85RC64
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13109–8E Memory FRAM 64 K 8 K 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00019-3v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64A • DESCRIPTION The MB85RC64A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00019-3v0-E
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