135175MHZ Search Results

RA07M1317MS

Abstract: 135175MHz ra07m1317msa
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317MSA RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to

RA30H1317M

Abstract: RA30H1317M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to

RD12MVP1

Abstract: RD12MVS1 2040D
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-VHF-034-B Date : 10th Feb. 2006 Rev. date : 22 th Jun. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 single-amplifier RF characteristics data at f=135-175MHz,Vdd=7.2V

RA30H1317M1

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M1 RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to

RA08H1317

Abstract: RA08H1317M RA08H1317M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08H1317 RA08H1317M 08H1317M RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module

RD07MUS2B

Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

RD07MUS2B

Abstract: RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-047-A Date : 15th Sep. ‘09 Rev. date : 22 th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=135-175 MHz,Vdd=7.2V

RA08N1317M

Abstract: RA08N1317M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz

RA07M1317M

Abstract: RA07M1317M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to

RA08N1317M

Abstract: RA08N1317M-101 RA08N1317
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz

RA60H1317M-101

Abstract: RA60H1317M RA60H1317M1
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M RoHS Compliance ,135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to

MAX232 8pin configuration

Abstract: max232 interface pic pc RS232 MAX232 RX1M-151-5 DB9M NULL DATASHEET MAX232 TX1M-151-5 FM RADIO transmitter circuit diagram vhf fm transmitter
Contextual Info: W E N Radiometrix Hartcran House, 231 Kenton Lane, Harrow, HA3 8RP, England Issue 3, 19 October2007 Tel: +44 0 20 8909 9595, Fax: +44 (0) 20 8909 2233 TX1M/RX1M VHF Narrow Band Band FM multi channel radio Transmitter & Receiver UK Version: RX1M-173-5/TX1M-173-5 (10mW)

RD12MVP1

Abstract: RD12MVS1 mitsubishi 5218 5253 1007
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034-A Date : 10th Feb. 2006 Rev.date : 7th Jan. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 135-175MHz RF characteristics data

RA30H1317M1-201

Abstract: Mitsubishi GP730 RA30H1317M1
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M1 RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to

RD07MUS2B

Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor

RA07M1317MS

Abstract: RA07M1317MSA RA07M1317M-s RA07M
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317MSA RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to

Contextual Info: A m itsu b ish i ELECTRONIC DEVICE GROUP RF POWER MODULE M67755 Series 135-175MHz Band 5W Handy Radio DESCRIPTION OUTLINE DRAWING M67755 series are thick film hybrid RF power modules especially designed for 135-175MHz band handy radios. 14 ± 0.5 ' 45 ± 1

RA30H1317M

Abstract: 175mhz
Contextual Info: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES RA30H1317M Silicon MOS FET Power Amplifier, 135-175MHz 30W FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm 66.0 + / - 0.5 21.0 2.3 MAXIMUM RATINGS SYMBOL

hatfield attenuator

Abstract: RA60H1317M RA60H1317M-01 RA60H1317M-E01 RF MOSFET MODULE low voltage power transistor RF MODULE CIRCUIT DIAGRAM
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M 135-175MHz 60W 12.5V MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to

RA60H131

Abstract: RA60H1317M-101
Contextual Info: <Silicon RF Power Modules > RA60H1317M RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the

GP 809 DIODE

Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE
Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from

Contextual Info: Hartcran House, 231 Kenton Lane, Harrow, Middlesex, HA3 8RP, England Tel: +44 0 20 8909 9595, Fax: +44 (0) 20 8909 2233, www.radiometrix.com QPX1 Issue 1, 31 July 2012 123455267859ABC4DDE82F 2 4DBE9E The QPX1 transceiver module offers a 2 watt RF output VHF radio link, in a robust

schematic diagram 48v bldc motor speed controller

Abstract: power supply DVD schematic diagram ic viper 22 A fault finding all type of lcd tv file VIPER53 circuit diagram of smps 400w DESKTOP auto cut off circuity diagram 48v battery charger 3v battery mini motor speed control circuit diagram schematic diagram ac-dc welding inverter CIRCUIT Hdmi to micro usb wiring diagram VIPER22A for DVD out put of 12v and 5v
Contextual Info: www.st.com/express INDUSTRIAL AND MULTISEGMENT PRODUCTS 2. TDE1708DFT Power Switch 3. L6726A & L6727 Buck Controllers 4. practiSPIN 19. STR750 Motor Control Kit 20. USB Developer Kit 21. ST7FLiteUO Design Tool 5. L6562A PFC Controller 22. 1Mbit Serial EEPROM

g35V

Abstract: "MOSFET Module" hatfield attenuator F-135 mitsubishi power module mitsubishi rf power module RF MOSFET MODULE RA08N1317M RA08N1317M-01 RA08N1317M-E01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M 135-175MHz 8W 9.6V PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz