135OC Search Results

HUR3020CT

Abstract: HUR3030CT
Contextual Info: HUR3020CT, HUR3030CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 200 300 HUR3020CT HUR3030CT Symbol VRRM V 200 300 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5

HUR3020CTS

Contextual Info: HUR3020CTS High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-263 D2PAK C(TAB) A C A NC A=Anode, NC= No connection, TAB=Cathode HUR3020CTS VRSM V 200 Symbol VRRM V 200 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5

HUR2060CT

Contextual Info: HUR2060CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR2060CT Symbol VRRM V 600 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5 IFSM

Contextual Info: a SMBus/I2C Compatible,10-bit Digital Temperature Sensor in 5 Pin SOT-23 AD7415 Preliminary Technical Data FEATURES 10-Bit Temperature to Digital Converter. Temperature range: -55oC to +135oC -55oC to +125oC Accuracy of ±2oC SMBusTM/I2CR Compatible Serial Interface

sonic cleaner

Abstract: HUR2060CT
Contextual Info: HUR2060CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR2060CT Symbol VRRM V 600 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5 IFSM

HUR3020CTS

Contextual Info: HUR3020CTS High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-263 D2PAK C(TAB) A C A NC A=Anode, NC= No connection, TAB=Cathode HUR3020CTS VRSM V 200 Symbol VRRM V 200 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5

100v 3A ultra fast recovery diode

Abstract: HUR6060PT 100V 60A Diode
Contextual Info: HUR6060PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR6060PT Symbol VRRM V 600 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5 IFSM

E85381

Abstract: Raychem OR Tyco Electronics Raychem Connectors TC-CAPS-4001-9 KU tyco raychem tyco Tyco Electronics size of raychem insulation
Contextual Info: TC Cap • Electrical insulation • Small, lightweight Single wall, heat-shrinkable end caps • Vibration-proof • Temperature rating to +135oC TC cap is a lightweight, single wall, heatshrinkable end cap designed to insulate and terminate dead-end electrical wires,

D7415

Abstract: DIODE CG4 HN SOT23-5
Contextual Info: a SMBus/I2C Compatible,10-bit Digital Temperature Sensor in 5 Pin SOT-23 AD7415 Preliminary Technical Data FEATURES 10-Bit Temperature to Digital Converter. Temperature range: -55oC to +135oC -55oC to +125oC Accuracy of ±2oC SMBusTM/I2CR Compatible Serial Interface

oc170

Abstract: JESD22-B104-B Vitec Electronics
Contextual Info: Surface Mount Power Inductor Designed for DC/DC Converters FEATURES Extended operating range of -35 to 135oC. Peak current handling of 18 Amps. 1 MHz operating frequency. Robust package capable of handling aggressive reflow soldering process. Low profile package suitable for portable

HUR6060PT

Contextual Info: HUR6060PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR6060PT Symbol VRRM V 600 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5 IFSM

la sot23-8 analog

Abstract: AD7414 AD7414-0 code d12 6-pin sot-23 D7414 HN SOT23
Contextual Info: a SMBus/I2C Compatible,10-bit Digital Temperature Sensor in SOT-23 AD7414 Preliminary Technical Data FEATURES 10-Bit Temperature to Digital Converter. Temperature ranges: -55oC to +135oC -55oC to +125oC Accuracy of ±2oC SMBusTM/I2CR Compatible Serial Interface

HUR3020CT

Abstract: HUR3030CT MJ 800
Contextual Info: HUR3020CT, HUR3030CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 200 300 HUR3020CT HUR3030CT Symbol VRRM V 200 300 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5

MBR10H100

Contextual Info: MBR1035 THRU MBR10H100 10.0 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 100 Volts Current 10.0 Amperes TO-220A Features .185 4.70 .175(4.44) Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction

Contextual Info: VNB10N07/K10N07FM VNP10N07FI/VNV10N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 70 70 70 70 V V V V R DS on 0.1 0.1 0.1 0.1 Ω Ω Ω Ω I lim 10 10 10 10 A A

VNK5N07FM

Abstract: VNP5N07FI VND5N07 VND5N07-1 SGS-Thomson mosfet ipak
Contextual Info: VND5N07/VND5N07-1 VNP5N07FI/K5N07FM "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VND5N07 VND5N07-1 VNP5N07FI VNK5N07FM Vclamp 70 70 70 70 V V V V R DS on 0.2 0.2 0.2 0.2 Ω Ω Ω Ω I lim 5 5 5 5 A A A A 3 • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION

NDS9955

Abstract: SOIC-16
Contextual Info: May 1998 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

NDS9936

Contextual Info: February 1996 NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

Contextual Info: AP9928GEM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low on-resistance D2 D2 ▼ Capable of 2.5V gate drive D1 D1 ▼ Surface mount package BVDSS 20V RDS ON 23mΩ ID 7.3A G2 S2 SO-8 S1 G1 Description

9936gm

Abstract: AP9936GM-HF
Contextual Info: AP9936GM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ DC-DC Application ▼ Dual N-channel Device D2 D1 D2 D1 G2 S2 SO-8 S1 30V RDS ON 50mΩ ID ▼ Surface Mount Package ▼ RoHS Compliant BVDSS 5A G1

PF5085

Abstract: NDS9959
Contextual Info: February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

VNB14N04

Abstract: VNK14N04FM VNP14N04FI VNV14N04 diode SS 16
Contextual Info: VNB14N04/K14N04FM VNP14N04FI/VNV14N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB14N04 VNK14N04FM VNP14N04FI VNV14N04 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 42 42 42 42 V V V V R DS on 0.07 0.07 0.07 0.07 Ω Ω Ω Ω I lim 14 14 14 14

Contextual Info: SSM4507M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 D1 D2 D1 D1 D1 Lower gate charge Fast switching performance N-Ch D2 D2 SO-8 G2 G2 S2 G1 S2 S1 G1 S1 BV P-Ch Description R DS ON 36mΩ ID BV DSS R DS(ON) ID

Contextual Info: SSM9936GM Dual N-channel Enhancement-mode Power MOSFETs BVD2 Simple drive requirement D2 Lower gate charge D1 D1 Fast switching characteristics R I G2 S2 Pb-free; RoHS compliant. SO-8 S1 BVDSS 30V R DS ON 50mΩ ID 5A G1 DESCRIPTION Advanced Power MOSFETs from Silicon Standard provide the