136 8PIN Search Results

IQEXO-3C

Abstract: iqpxo X708A X704A X701A KSS-EXO-3C/16.384 8640AN 8640BN 8640CN S601A
Contextual Info: PROGRAMMABLE OSCILLATORS - Section Contents Stock Programmable Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136 IQEXO-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138

Contextual Info: MITSUBISHI ICs TV M54487FP 1.0GHz 1/128. 1/136 2-MODULUS HIGH SPEED PRESCALER DESCRIPTION The M54487FP is a semiconductor integrated circuit with ECL circuitry and includes built-in, dual-modulus frequency PIN CONFIGURATION (TOP VIEW) POWER SUPPLY Vcc ^

S-0141

Abstract: 277h S-5412 a 1515 beau W236ACPX-1 W21ACPX-2
Contextual Info: 1232-2012.qxp:QuarkCatalogTempNew 9/7/12 5:24 PM Page 1232 INTERCONNECT TEST & MEASUREMENT 13 Special Purpose Relays and Sockets Traffic Flash Transfer Relays — 21/136 Series Voltage Sensing Relays — 236 Series 168986 RoHS H Meets NEMA TS2 Standards

GGX5

Abstract: nimh spice model charge LTC4403-1 LTC4403-1EMS8 LTC4403-2 LTC4403-2EMS LT5503
Contextual Info: Final Electrical Specifications LTC4403-1/LTC4403-2 Multiband RF Power Controllers for EDGE/TDMA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Supports AM Modulation in EDGE/TDMA ANSI-136 Applications Single Output RF Power Amplifier Control

cellular phone amplifier power control transistor

Abstract: mobile rf power amplifier transistor nd1 marking code RF AMPLIFIER FOR 10MHz LTC4403-1 LTC4403-1EMS8 LTC4403-2 LTC4403-2EMS RF schottky diode 900mhz Diplexer
Contextual Info: LTC4403-1/LTC4403-2 Multiband RF Power Controllers for EDGE/TDMA U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Supports AM Modulation in EDGE/TDMA ANSI-136 Applications Single Output RF Power Amplifier Control (LTC4403-1)

LT5503

Contextual Info: LTC4402-1/LTC4402-2 Multiband RF Power Controllers for EDGE/TDMA FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Supports AM Modulation in EDGE/TDMA ANSI-136 Applications Single Output RF Power Amplifier Control (LTC4402-1)

LT5503

Contextual Info: LTC4403-1/LTC4403-2 Multiband RF Power Controllers for EDGE/TDMA FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Supports AM Modulation in EDGE/TDMA ANSI-136 Applications Single Output RF Power Amplifier Control (LTC4403-1)

LTC4402-1

Abstract: LTC4402-1EMS8 LTC4402-2 LTC4402-2EMS LTC4402-X nimh spice model charge nd1 marking code 900mhz Diplexer phase shifter DC-3GHz LTC5507
Contextual Info: LTC4402-1/LTC4402-2 Multiband RF Power Controllers for EDGE/TDMA U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Supports AM Modulation in EDGE/TDMA ANSI-136 Applications Single Output RF Power Amplifier Control (LTC4402-1)

PB595CX

Abstract: MPB595CX NEC SIP 8pin upb595 PB595GR mPB595 TB-427 PB595
Contextual Info: r sec w a m w n s. DATA SHEET Preliminary BIPOLAR DIGITAL INTEGRATED CIRCUIT /¿PB595 / 1 GHz DIVIDE-BY-128/136 LOW POWER PR ESC A LER The fiPB595 is a two-modulus prescaler for T V , CATV and V T R , which adopts NEC's original pulse swallowing method, it is high sensitivity and low power prescaler.

PD1712

Abstract: NEC SIP 8pin JPB568G UPB568HA P8HA-254B
Contextual Info: N E C / C A LIFO R N IA 30E D bMa7Mm 0002114 a h n e c c .- T W S - 1 9 - / 3 1 GHz DIVIDE-BY-128/136 LOW POWER PRESCALER The ¿¿PB568C, the /¿PB568HA and the jjPB568G UPB568, UPB568HA are tw o-m odulus prescaleres fo r T V , C A T V and V T R , w h ich

upb568

Contextual Info: Jb „ i 'I 1991 1 GHz DIVIDE-BY-128/136 LOW POWER PRESCALER UPB568, UPB568HA T he iP B 5 6 8 C , the *iP B 5 6 8 H A and the mPB568G »re tw o-m odulus prescaleres for T V , C A T V and V T R , w h ic h adoptes NEC's original pulse swallowing m ethod, they are high sensitivity and low power prescaleres.

tms 374

Abstract: 3131 tms 374 chip
Contextual Info: TMS 3126, 3127, 3128, 3129, 3130, 3131, 3132 LC. NC DUAL 96-, 100-, 128-, 132-, 133-, 136-, 144-BIT STATIC SHIFT REGISTERS MOS LSI B U L L E T IN • DC to 2 .5 -M H z Operation • Static Configuration • Single T TL -C o m p atib le Clock N O . D L -S 7 5 1 2 2 6 3 , M A Y

3126 "pin compatible"

Abstract: tms 374 tms 374 chip 3129 3127 nc
Contextual Info: MO S LSI T M S 3126, 3127. 3128. 3129. 3130. 3132 NC DUAL 96-, 100-, 128-, 132-, 133-, 133-, 136-, 144-BIT STATIC SHIFT R E G IS T E R S O C T O B E R 1977 • D C to 2.5-MHz Operation • Static Configuration • Single TTl-Com patibte Clock 8-PIN D U A L -IN -L IN E P A C K A G E

Contextual Info: TM S 3126, 3127, 3128, 3129, 3130, 3131, 3132 LC. NC D U A L 96-, 100-, 128-, 132-, 133-, 136-, 144-BIT STATIC S H IFT R EG ISTER S M OS LSI B U L L E T I N N O . D L -S 7 5 1 2 2 6 3 , M A Y 1 9 7 5 D C to 2 .5 -M H z Operation TO -99 H E R M E T IC A L L Y S E A LE D PACKAGE

Contextual Info: P hilips Sem iconductors Product specification W ide body, high isolation, high-speed optocouplers FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum clearance of 9.6 mm and minimum creepage of 10 mm • 11 MHz bandwidth

25C80

Abstract: JRC 2100 8 pin ST7FLiteUS5 DALI BASIC SO U435 MOROCCO AN2326 HE10 JRc 1431 A STX-RLINK pin out 02800E
Contextual Info: ST7LITEUS2 ST7LITEUS5 8-bit MCU with single voltage Flash memory, ADC, timers Features • ■ Memories – 1 Kbytes single-voltage Flash Program memory with readout protection, ICP and IAP 10 K write/erase cycles guaranteed data retention: 20 years at 55 °C

JRC 2100 8 pin

Abstract: JRC 2100 bs 1600 pir sensor Pinout Diagram for IC ne555 electronic watchdog application using NE555 IC 16 PIN PIR SENSOR IC PINOUT ST7DALI-EVAL kit NE555 applications and pins configurations DIP8-300 Datasheet of ic ne555
Contextual Info: ST7LITEUS2 ST7LITEUS5 8-bit MCU with single voltage Flash memory, ADC, timers Features • ■ Memories – 1 Kbytes single-voltage Flash Program memory with readout protection, ICP and IAP 10 K write/erase cycles guaranteed data retention: 20 years at 55 °C

Contextual Info: Product Specifications PART NO.: VL31B1G63E-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM VLP ECC UNBUFFERED DIMM 240-PIN Description The VL31B1G63E is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge

Contextual Info: Product Specifications PART NO.: VL31B5663A-K0/K9/F8/E7S REV: 1.0 General Information 2GB 256Mx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B5663A is a 256Mx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 128Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge

DDR3-1066

Abstract: K4B2G0846D-HCK0 240-PIN DDR3-1333 PC3-10600 PC3-12800 samsung DDR3 SDRAM 2GB
Contextual Info: Product Specifications PART NO.: VL31B1K63A-K0/K9/F8S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B1K63A is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is four rank, consists of thirty-six CMOS 256Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge

DDR3 timing diagram

Abstract: 240-PIN DDR3-1066 DDR3-1333 PC3-10600 PC3-12800 K4B2G0846D K4B2G0846D-HCK0
Contextual Info: Product Specifications PART NO.: VL31B1G63E-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM VLP ECC UNBUFFERED DIMM 240-PIN Description The VL31B1G63E is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge

240-PIN

Abstract: DDR3-1066 DDR3-1333 PC3-10600 PC3-12800 samsung K9 DDR3 timing diagram
Contextual Info: Product Specifications PART NO.: VL31B5663A-K0/K9/F8/E7S REV: 1.0 General Information 2GB 256Mx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B5663A is a 256Mx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 128Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge

Contextual Info: Product Specifications PART NO.: VL31B1G63A-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B1G63A is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge

Contextual Info: Product Specifications PART NO.: VL31B1K63A-K0/K9/F8S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B1K63A is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is four rank, consists of thirty-six CMOS 256Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge