Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL43B1G63A-K0/K9/F8/E7S REV: 1.1 General Information 8GB 1Gx72 DDR3 SDRAM ECC REGISTERED SO-RDIMM 204-PIN Description The VL43B1G63A is a 1Gx72 DDR3 SDRAM high density RDIMM. This dual rank memory module consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered
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VL43B1G63A-K0/K9/F8/E7S
1Gx72
204-PIN
VL43B1G63A
512Mx8
28-bit
204-pin
DDR3-800)
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE FLASH Nand 1Gx8-SOP Flash Memory MODULE 3DFN4G08VS1636 8Gbit Flash Nand organized as 1Gx8, based on 512Mx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) – Package D1 Features - Organization -Memory Cell Array (512M+16.384KM)bitx8. - Automatic Program and Erase
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3DFN4G08VS1636
512Mx8
384KM
3DFP-0636-REV
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usb flash drive circuit diagram
Abstract: k4075 Transcend V30 Transcend TS512MJF TS512MJFV30 Transcend circuit diagram
Text: TS512MJFV30 512MB USB2.0 JetFlash V30 Description Features TS512MJFV30 is a 512MB USB Flash Drive with 1pcs • Frame Color: Orange of 512Mx8 Flash Memory assembled on printed circuit • Fully compatible with hi-speed USB 2.0 board. • Easy Plug and Play installation
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TS512MJFV30
512MB
TS512MJFV30
512Mx8
VCC18
usb flash drive circuit diagram
k4075
Transcend V30
Transcend
TS512MJF
Transcend circuit diagram
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usb flash drive circuit diagram
Abstract: 512Mx8 Transcend Flash Drive Transcend circuit diagram Transcend circuit diagram jetflash TS512MJF130 transcend usb flash drive TS512MJF
Text: TS512MJF130 Description TS512MJF130 is a 512MB USB Flash Drive with 1 pcs of 512Mx8 Flash Memory assembled on a printed circuit board. 512MB USB2.0 JetFlash Features • Band Color: Orange • USB 2.0 compatible, true Plug and Play • Powered directly via the USB port. No external power or
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TS512MJF130
TS512MJF130
512MB
512Mx8
usb flash drive circuit diagram
Transcend Flash Drive
Transcend circuit diagram
Transcend circuit diagram jetflash
transcend usb flash drive
TS512MJF
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL31B1G63A-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B1G63A is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge
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VL31B1G63A-K0/K9/F8/E7S
1Gx72
240-PIN
VL31B1G63A
512Mx8
240-pin
240-pin,
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Untitled
Abstract: No abstract text available
Text: IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 4Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V •
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IS43/46TR16256A,
IS43/46TR16256AL,
IS43/46TR85120A,
IS43/46TR85120AL
512Mx8,
256Mx16
cycles/64
cycles/32
IS46TR85120AL
-15HBLA2
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Untitled
Abstract: No abstract text available
Text: NT2GC64B C H4B0PF / NT4GC64B(C)88B0NF / NT8GC64B(C)8HB0NF 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3(L)-1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort PC3(L)-12800 -DI Unit
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NT2GC64B
NT4GC64B
88B0NF
NT8GC64B
1024M
256Mx16
512Mx8
240-Pin
256Mx64
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Untitled
Abstract: No abstract text available
Text: NT2GC64B C H4B0PF / NT4GC64B(C)88B0(1)NF / NT8GC64B(C)8HB0NF 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3(L)-1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort PC3(L)-12800 -DI
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NT2GC64B
NT4GC64B
NT8GC64B
1024M
256Mx16
512Mx8
240-Pin
256Mx64
256Mx16
512Mx64
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HY27UF084
Abstract: hynix nand flash 4Gb HY27UF084G2M 52-ULGA
Text: HY27UF084G2M Series 4Gbit 512Mx8bit NAND Flash 4Gb NAND FLASH HY27UF084G2M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UF084G2M
512Mx8bit)
HY27UF084G2M
HY27UF084
hynix nand flash 4Gb
52-ULGA
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL31B1G63E-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM VLP ECC UNBUFFERED DIMM 240-PIN Description The VL31B1G63E is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge
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VL31B1G63E-K0/K9/F8/E7S
1Gx72
240-PIN
VL31B1G63E
512Mx8
240-pin
240-pin,
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL43D1G63A-K9S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM LOW VOLTAGE ECC REGISTERED SO-RDIMM 204-PIN Description The VL43D1G63A is a 1Gx72 DDR3 SDRAM high density SO-RDIMM. This dual rank memory module consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered
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VL43D1G63A-K9S
1Gx72
204-PIN
VL43D1G63A
512Mx8
28-bit
204-pin
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Untitled
Abstract: No abstract text available
Text: SG572128CH8YZUU1 January 13, 2010 Ordering Information Part Numbers Description Module Speed SG572128CH8YZKA1 512Mx72 4GB , DDR3, 244-pin Registered Mini-DIMM, Parity, ECC, VLP, 512Mx8 Based (Stacked - two 256Mx8), DDR3-800-555, 18.75mm, Green Module (RoHS
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SG572128CH8YZUU1
SG572128CH8YZKA1
512Mx72
244-pin
512Mx8
256Mx8)
DDR3-800-555,
PC3-6400
SG572128CH8YZ6B1
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Untitled
Abstract: No abstract text available
Text: HY27UF084G2M Series 4Gbit 512Mx8bit NAND Flash 4Gb NAND FLASH HY27UF084G2M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UF084G2M
512Mx8bit)
HY27UF084G2M
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL43D1G63A-K9S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM LOW VOLTAGE ECC REGISTERED SO-RDIMM 204-PIN Description The VL43D1G63A is a 1Gx72 DDR3 SDRAM high density SO-RDIMM. This dual rank memory module consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered
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VL43D1G63A-K9S
1Gx72
204-PIN
VL43D1G63A
512Mx8
28-bit
204-pin
204-pin,
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256Mx16bit
Abstract: W352 hy27uh084g2m
Text: Preliminary HY27UH 08/16 4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Feb. 04. 2004
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HY27UH
HY27SH
512Mx8bit
256Mx16bit)
table14)
256Mx16bit
W352
hy27uh084g2m
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512Mx8
Abstract: NT8GC72B
Text: NT4GC72B C 89B0NF / NT8GC72B(C)8PB0NF 4GB: 512M x 72 / 8GB: 1024M x 72 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3(L)-1333/1600 512Mx8 SDRAM B-Die Features •Performance: Speed Sort DIMM CAS Latency PC3(L)-10600 PC3(L)-12800
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NT4GC72B
89B0NF
NT8GC72B
1024M
512Mx8
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HY27UF084G2B
Abstract: HY27UF084 hynix nand HY27UF084G2B datasheet HY27UF(08/16)4G2B Series hynix nand hynix nand 4G hynix nand flash 2gb HY27UF084G2 hynix nand HY27UF084G2B HY27UF
Text: 1 HY27UF 08/16 4G2B Series 4Gbit (512Mx8bit) NAND Flash 4Gb NAND FLASH HY27UF(08/16)4G2B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UF
512Mx8bit)
HY27UF084G2B
HY27UF084
hynix nand HY27UF084G2B datasheet
HY27UF(08/16)4G2B Series
hynix nand
hynix nand 4G
hynix nand flash 2gb
HY27UF084G2
hynix nand HY27UF084G2B
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HY27UG084G2M
Abstract: HY27UG164G2M 52-ULGA hynix nand 4G HY27UG HY27UG084G2 HY27UG084GDM HY27UG084G
Text: HY27UG 08/16 4G(2/D)M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005 Preliminary
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HY27UG
512Mx8bit
256Mx16bit)
HY27UG084G2M
HY27UG164G2M
52-ULGA
hynix nand 4G
HY27UG084G2
HY27UG084GDM
HY27UG084G
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Untitled
Abstract: No abstract text available
Text: SG572128CH8SZUU1 October 21, 2009 Ordering Information Part Numbers Description Module Speed SG572128CH8SZKA1 512Mx72 4GB , DDR3, 244-pin Unbuffered Mini-DIMM, ECC, 512Mx8 Based (Stacked - two 256Mx8), DDR3-800555, 18.75mm, Green Module (RoHS Compliant).
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SG572128CH8SZUU1
SG572128CH8SZKA1
512Mx72
244-pin
512Mx8
256Mx8)
DDR3-800555,
PC3-6400
SG572128CH8SZ6B1
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Untitled
Abstract: No abstract text available
Text: SG5721G8CH8YZUU April 8, 2010 Ordering Information Part Numbers Description Module Speed SG5721G8CH8YZLC 1Gx72 8GB , DDR3, 244-pin Registered Mini-DIMM, Parity, ECC, 512Mx8 Based (Stacked - two 256Mx8), DDR3-1066777, 30.00mm, Green Module (RoHS Compliant).
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SG5721G8CH8YZUU
SG5721G8CH8YZLC
1Gx72
244-pin
512Mx8
256Mx8)
DDR3-1066777,
PC3-8500
SG5721G8CH8YZPH
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE FLASH Nand 512Mx64-BGA Flash Nand Memory MODULE 3D FN32G64VB8263 32Gbit Flash Nand organized as 512Mx64, based on 512Mx8 Pin Assignment Top View BGA 119 (Pitch : 1.27 mm) Features - Organized as 512Mx64-bit based on 512Mx8-bit - Single +3.3 0.3V power supply
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512Mx64-BGA
FN32G64VB8263
32Gbit
512Mx64,
512Mx8
512Mx64-bit
512Mx8-bit
MMFN64408808B-D
3DFP-0263-REV
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE DDR2 SDRam 512Mx8-SOP DDR2 SDRAM MODULE 3D 2D4G08US4283 4Gbit DDR2 SDRam organized as 512Mx8 based on 128Mx8 Pin Assignment Top View SOP 74 (Pitch : 0.65 mm) Features • Organized as 512Mx8bit based on four 1Gbit DDR2 SDRam. Power supply +1.8 ± 0.1V.
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512Mx8-SOP
2D4G08US4283
512Mx8
128Mx8
512Mx8bit
cycles/64ms
MMD208512804SU7
3DFP-0283-REV
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Untitled
Abstract: No abstract text available
Text: IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 4Gb DDR3 SDRAM PRELIMINARY INFORMATION NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V
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IS43/46TR16256A,
IS43/46TR16256AL,
IS43/46TR85120A,
IS43/46TR85120AL
512Mx8,
256Mx16
cycles/64
cycles/32
1600MT/s
IS46TR85120AL-125KBLA2
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TS1GJFV10
Abstract: Transcend Flash Drive usb flash drive block diagram usb flash drive circuit diagram
Text: TS1GJFV10 1GB USB2.0 JetFlash Description Features TS1GJFV10 is a 1GB USB Flash Drive with 1 pcs of • Color : Blue 1Gx8 or 2 pcs of 512Mx8 Flash Memory assembled • Elegant design with sliding USB connector on a printed circuit board. • USB 2.0 compatible, true Plug and Play
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TS1GJFV10
TS1GJFV10
512Mx8)
Me/2000/XP/Vista
VCC18
Transcend Flash Drive
usb flash drive block diagram
usb flash drive circuit diagram
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