K4J10324KE-HC1A
Abstract: K4J10324KE-HC14 T21N K4J10324KE k4j10324 K4J10324KE-HC12
Text: Target 1Gb GDDR3 SDRAM K4J10324KE 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 0.1 December 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J10324KE
136FBGA
10tCK
10MAX
K4J10324KE-HC1A
K4J10324KE-HC14
T21N
K4J10324KE
k4j10324
K4J10324KE-HC12
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K4j52324qh-hj1a
Abstract: K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC14 K4J52324QH-HJ K4J52324QH-HC12 GDDR3 SDRAM 256Mb K4J52324Q K4J52324QH-HC K4j52324qh-hj0
Text: 512M GDDR3 SDRAM K4J52324QH 512Mbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant May 2008 Revision 1.0 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J52324QH
512Mbit
136FBGA
10MAX
K4j52324qh-hj1a
K4J52324QH-HJ08
K4J52324QH
K4J52324QH-HC14
K4J52324QH-HJ
K4J52324QH-HC12
GDDR3 SDRAM 256Mb
K4J52324Q
K4J52324QH-HC
K4j52324qh-hj0
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K4j52324qh-hj1a
Abstract: K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC12 K4J52324Q
Text: Preliminary 512M GDDR3 SDRAM K4J52324QH 512Mbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant March 2008 Revision 0.8 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J52324QH
512Mbit
136FBGA
10MAX
K4j52324qh-hj1a
K4J52324QH-HJ08
K4J52324QH
K4J52324QH-HC12
K4J52324Q
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K4J10324KE-HC14
Abstract: K4J10324KE-HC1A K4J10324KE k4j10324 K4J10324KEHC12 k4j10324ke-hc1 T21N K4J10324KE-HC7A K4J10324KE-HC12 gddr3
Text: 1Gb GDDR3 SDRAM K4J10324KE 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 1.0 May 2009 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J10324KE
136FBGA
10MAX
K4J10324KE-HC14
K4J10324KE-HC1A
K4J10324KE
k4j10324
K4J10324KEHC12
k4j10324ke-hc1
T21N
K4J10324KE-HC7A
K4J10324KE-HC12
gddr3
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K4J10324QD
Abstract: k4j10324qd-hj1a K4J10324QD-HC14 K4J10324QD-HC12 GDDR3 SDRAM 256Mb T21N 32MX32 k4j10324qdhj1a gddr3
Text: 1Gb GDDR3 SDRAM K4J10324QD 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 1.2 May 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J10324QD
136FBGA
10MAX
K4J10324QD
k4j10324qd-hj1a
K4J10324QD-HC14
K4J10324QD-HC12
GDDR3 SDRAM 256Mb
T21N
32MX32
k4j10324qdhj1a
gddr3
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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ISL9504
Abstract: foxconn apple ar9350 C4722 l8400 C8450 C7550 D6905 foxconn m33 SOT23-5
Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 MS MS MS PS PS PS PS PS PS PS PS PS
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SOT23-5 AE31
Abstract: c9450 ar9350 ZH510 M5621 C4722 FERR-120-OHM-1 6A4 mic DIODE D6905 C8450
Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS
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DDR2 x32
Abstract: No abstract text available
Text: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.2 September 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J52324QC-B
512Mbit
DDR2 x32
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Untitled
Abstract: No abstract text available
Text: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.4 March 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J52324QC-B
512Mbit
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K4J52324Qc
Abstract: No abstract text available
Text: 512M GDDR3 SDRAM K4J52324QC 512Mbit GDDR3 SDRAM Revision 1.5 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K4J52324QC
512Mbit
K4J52324Qc
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DDR RAM 512M
Abstract: K4J52324QC-BC14 Hynix Cross Reference hynix memory h9 ddr2 K4J52324Q K4J52324QC-BJ12 mark t5n gddr3 K4J52324QC-BC20 K4J52324QC-A
Text: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.0 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J52324QC-B
512Mbit
DDR RAM 512M
K4J52324QC-BC14
Hynix Cross Reference
hynix memory h9 ddr2
K4J52324Q
K4J52324QC-BJ12
mark t5n
gddr3
K4J52324QC-BC20
K4J52324QC-A
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168-FBGA
Abstract: 168FBGA Mobile SDRAM 152-FBGA marking code hf FBGA 9 x 12 package tray 152FBGA FBGA 8 x 14 package tray DDR2 x32 device marking code S4
Text: Mobile-SDR/DDR Code Information 1/3 Last Updated : July 2009 K4XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory (K) 12. Package - Mobile-SDRAM(M) B : 54-CSP(LF, HF) H : 90-FBGA_S(LF, HF) 2. DRAM : 4 3. Small Classification M : Mobile-SDRAM (Discrete Device for Mobile)
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54-CSP
90-FBGA
168-FBGA
60-FBGA
152-FBGA
4K/64ms
8K/64ms
168FBGA
Mobile SDRAM
marking code hf
FBGA 9 x 12 package tray
152FBGA
FBGA 8 x 14 package tray
DDR2 x32
device marking code S4
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GDDR5
Abstract: 96FBGA POD-15 SSTL-15 96-FBGA 170FBGA GDDR3 SDRAM 256Mb 170-FBGA 100-FBGA 136FBGA
Text: Jul.2010 Graphics Code Information Component K4XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory K 11. "─“ 2. DRAM : 4 12. Package - gDDR2 H : 84FBGA (Halogen Free & Lead Free) B : 84FBGA (Halogen Free & Lead Free & Flip Chip)
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84FBGA
100FBGA
96FBGA
136FBGA
170FBGA
8K/64ms
8K/32ms
GDDR5
96FBGA
POD-15
SSTL-15
96-FBGA
170FBGA
GDDR3 SDRAM 256Mb
170-FBGA
100-FBGA
136FBGA
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Foxconn apple
Abstract: C900 C4722 FERR-120-OHM-1 C4620 ISL9504 foxconn g41 SOT23-5 AE31 M/sh 40/085/21/INDUCTOR DE 100Uf SMD PACKAGE JD smd diodes
Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 MS MS MS PS PS PS PS PS PS PS PS PS
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C4751 1
Abstract: ISL9504 5d7 switching regulator 820-20 C4722 pwm INVERTER LCD CAP1210 C93-02 D8310 p66 apple
Text: 8 6 7 5 D C B A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 33 34 38 41 42 43 44 45 46 47 53 54 PDF JD JD MY JD JD MY JD JD JD JD JD JD JD JD JD JD JD JD JD JD JD MY JD JD JD JD JD JD JD JD JD JD JD JD 1 2 3 4 5 6 7
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ZH506
ZH507
ZH508
ZH509
ZH510
ZH511
ZH512
ZH513
ZH514
ZH515
C4751 1
ISL9504
5d7 switching regulator
820-20
C4722
pwm INVERTER LCD
CAP1210
C93-02
D8310
p66 apple
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K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-09-ALL-001
K9F2G08U0B
K9HCG08U1M-PCB0
K9NCG08U5M-PCB0
K9F1G08U0C
K9F4G08U0B-PCB0
K9F2G08U0B-PCB0
K9F4G08U0B
K9WBG08U1M
K9F1G08U0C-PCB0
K9G4G08U0B
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samsung K9 flash
Abstract: Samsung EOL 168FBGA samsung nor flash samsung s6 K4X1G163PC-FGC3 k4 MARKING CODE samsung K4 samsung cdram
Text: SAMSUNG's Digital World go contents DRAM ● ● ● ● Computing ❍ DDR3 Products ❍ DDR2 Products ❍ DDR Products ❍ SDRAM Products ❍ System Compatibility ❍ EOL Products Consumer ❍ Products Mobile ❍ Products ❍ EOL Products Graphic & Gaming
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800MHz-40ns
i850E
K4X1G163PC
07-Sep-2010
D18ns
TRP18ns
TRCD18ns
samsung K9 flash
Samsung EOL
168FBGA
samsung nor flash
samsung s6
K4X1G163PC-FGC3
k4 MARKING CODE
samsung K4
samsung cdram
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C5300
Abstract: C9112 ISL9504 C4722 82d5 C4751 1 TLM8 C9750 J6602 ISL6269
Text: 8 7 6 5 D C B A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 33 34 38 41 42 43 44 45 46 47 53 54 PDF JD JD MY JD JD MY JD JD JD JD JD JD JD JD JD JD JD JD JD JD JD MY JD JD JD JD JD JD JD JD JD JD JD JD 1 2 3 4 5 6 7
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U9700
XC7200
XW602
XW605
XW5800
XW5900
XW7201
XW7300
XW7400
C5300
C9112
ISL9504
C4722
82d5
C4751 1
TLM8
C9750
J6602
ISL6269
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K4X2G323PD8GD8
Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from
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BR-12-ALL-001
K4X2G323PD8GD8
K9HFGY8S5A-HCK0
K4H511638JLCCC
samsung eMMC 5.0
KLMBG4GE2A-A001
K9K8G08U0D-SIB0
K4X51163PK-FGD8
KLMAG2GE4A
k4h561638n-lccc
K4G10325FG-HC03
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K5W1G
Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION
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BR-07-ALL-001
K5W1G
KMCME0000M-B998
k9hbg08u1m
K9MCG08U5M
K5E1257ACM
MC4GE04G5APP-0XA
b998
KMCME0000M
hd161hj
K5D1G
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0909NS
Abstract: GDDR5 10x10mm, LGA, 44 pin 170-FBGA 60-LGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA PC133 133Mhz cl3
Text: DRAM Code Information 1/9 K4XXXXXXXX - XXXXXXX 1 2 3 4 1. Memory (K) 2. DRAM : 4 3. Small Classification A : Advanced Dram Technology B : DDR3 SDRAM C : Network-DRAM D : DDR SGRAM E : EDO F : FP G : GDDR5 SDRAM H : DDR SDRAM J : GDDR3 SDRAM K : Mobile SDRAM PEA
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16K/16ms
4K/32ms
8K/64ms
16K/32ms
8K/32ms
2K/16ms
4K/64ms
429ns
667ns
0909NS
GDDR5
10x10mm, LGA, 44 pin
170-FBGA
60-LGA
MARKING CL4
FBGA DDR3 x32
170FBGA
60-FBGA
PC133 133Mhz cl3
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Q8303
Abstract: JD smd diodes C4722 C5807 C8450 p66 apple XTAL 25mhz 50ppm SMC H8S2116 U6700 Socket AM2
Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS
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z1031
Abstract: H10N10 MDC47 VR701 VR121 z1021 VC704 VR753 Z1310 VC558
Text: 5 10 PCIE_REFCLKP (10) PCIE_REFCLKN 4 3 VTP6 TP_22mil_SM_to p DNI PCIE_REFCLKP PCIE_REFCLKN D (10) PCIE_RXP[15.0] (10) PCIE_RXN[15.0] (10) PCIE_TXP[15.0] (10) PCIE_TXN[15.0] PCIE_RXP[15.0] TP_22mil_SM_to p VTP1 DNI PCIE_RXN[15.0] PCIE_TXP[15.0] PCIE_TXN[15.0]
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Z0101
RX10P
RX10N
RX11P
RX11N
RX12P
RX12N
RX13P
RX13N
RX14P
z1031
H10N10
MDC47
VR701
VR121
z1021
VC704
VR753
Z1310
VC558
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