138MHZ Search Results

Contextual Info: ¡il TU4IHDLDCV GS82032Q/T 138/133/117/100/66,3.3V gs82032Q r C A li V U H H \ À 0 0 O fc P U l O l Features • • • • • • • • • • Single 3.3V +10%/-5% power supply High frequency operation: 138MHz Fast access time: 4ns Clock to Q FT mode pin for either flow-thru or pipeline operation

Contextual Info: TAI-SAW TECHNOLOGY CO., LTD. No.3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales3@mail.taisaw.com Web: www.taisaw.com SAW Filter 138MHz 60MHz BW SMD 5.0x7.0 mm MODEL NO.: TB0854A

tq33

Contextual Info: High Output Drive cti u m o i o G v GS820H32Q/T 138/133/117/100/66,3.3V GS820H32Q/T Features • 2x Output drive of GS82032 • • • • • • • • • • 80-138MHz P/L 66MHz (FTi 64K x 32 Burst Single 3.3V + \ 0 %/- 5 % power supply High frequency operation: 138MHz

K7A323600M

Abstract: K7B321825M-QC65 K7A321800M
Contextual Info: K7A323600M K7A321800M 1Mx36 & 2Mx18 Synchronous SRAM Document Title 1Mx36 & 2Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial draft May. 10. 2001 Advance 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

Contextual Info: K7A163608A K7A163208A K7A161808A PRELIMINARY 512Kx36/x32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial draft 1. Add x32 org and industrial temperature

Balun cable

Abstract: LTC2220 LTC2220-1 LTC2221 LTC2230 LTC2231
Contextual Info: LTC2220-1 12-Bit,185Msps ADC U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 2220-1 is a 185Msps, sampling 12-bit A/D converter designed for digitizing high frequency, wide dynamic range signals. The LTC2220-1 is perfect for

Guide for Common Mode Filter Design Coilcraft

Abstract: 0603CS LTC2208 LTC6400 LTC6401 LTC6401-20 LTC6401CUD-8 LTC6401IUD-8 g1318 LT 735
Contextual Info: LTC6401-8 2.2GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2.2GHz –3dB Bandwidth Fixed Gain of 2.5V/V 8dB –92dBc IMD3 at 70MHz (Equivalent OIP3 = 50dBm)

ED-4701

Abstract: ISL54054 ISL54054IRUZ-T ISL54055 ISL54055IRUZ-T TB363 NX DIODE
Contextual Info: ISL54054, ISL54055 Data Sheet March 21, 2007 Ultra Low ON-Resistance, Low Voltage, Single Supply, Single SPST/1:2 Distribution Analog Switch The Intersil ISL54054 and ISL54055 devices consist of low ON-resistance, low voltage, bi-directional SPST analog

NC-2H

Abstract: K7B161825A K7B163225A K7B163625A
Contextual Info: K7B163625A K7B163225A K7B161825A Preliminary 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History 1. Initial draft 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .

K7A161801A

Abstract: K7A163201A K7A163601A
Contextual Info: K7A163601A K7A163201A K7A161801A PRELIMINARY 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History Draft Date Remark 1. Initial draft 1. Add x32 org and industrial temperature .

S1L50552

Abstract: tcon mini-lvds EPSON tcon S1X65263 tcon 17 epson s1k500 SMART ASIC 197 S1K60000 S1L50062 UXGA tcon
Contextual Info: ASICs Gate Arrays / Embedded Arrays / Standard Cells 2010 Our goal in the Epson Semiconductor Operations Division is to be a true partner for you, by looking to give you an edge in product development through our concept of "+less design". Gate Arrays / Embedded Arrays / Standard Cells

Contextual Info: AN11369 BGU8004 GNSS LNA evaluation board Rev. 1 — 10 October 2013 Application note Document information Info Content Keywords BGU8004, GNSS, LNA Abstract This document explains the BGU8004 GNSS LNA evaluation board Contact information For more information, please visit: http://www.nxp.com

Contextual Info: K7A163601A K7A163201A K7A161801A 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 0.1 0.2 Initial draft 1. Add x32 org and industrial temperature .

Contextual Info: K7B323625M K7B321825M 1Mx36 & 2Mx18 Synchronous SRAM Document Title 1Mx36 & 2Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 History 1. Initial draft Draft Date May. 10. 2001 Remark Advance 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary

Contextual Info: K7A203600B K7A203200B 64Kx36/x32 Synchronous SRAM 2Mb Sync. Pipelined Burst SRAM Specification 100TQFP with Pb only INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: K7A163600A K7A163200A K7A161800A PRELIMINARY 512Kx36/x32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Draft Date Remark Initial draft 1. Add JTAG Scan Order

LTC2220

Abstract: LTC2220-1 LTC2221 LTC2230 LTC2231
Contextual Info: LTC2230/LTC2231 10-Bit,170Msps/ 135Msps ADCs U FEATURES DESCRIPTIO • The LTC 2230 and LTC2231 are 170Msps/135Msps, sampling 10-bit A/D converters designed for digitizing high frequency, wide dynamic range signals. The LTC2230/ LTC2231 are perfect for demanding communications

LTC2220

Abstract: LTC2221 LTC2230 LTC2231 sine wave Control IC
Contextual Info: LTC2220/LTC2221 12-Bit,170Msps/ 135Msps ADCs U FEATURES DESCRIPTIO • The LTC 2220 and LTC2221 are 170Msps/135Msps, sampling 12-bit A/D converters designed for digitizing high frequency, wide dynamic range signals. The LTC2220/ LTC2221 are perfect for demanding communications

EvalBoard

Abstract: TDA5252 lna vco mixer quadrature 2GHz pll fsk MODULATOR 50E3 TDA5250 TDA5255 300mhz demodulator dip fsk CV182 receiver tda 1072
Contextual Info: Data Sheet, Version 1.1, 2007-02-26 TDA5252 G2 ASK/FSK 915MHz Wireless Transceiver Wireless Control Components N e v e r s t o p t h i n k i n g . Edition 2007-02-26 Published by Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany Infineon Technologies AG 2/26/07.

power amplifier absolute AD 3600 SCHEMATIC

Abstract: 1000 640114 LTC6401-14 0603CS LTC2208 LTC6400 LTC6401 LTC6401-20 LTC6401CUD-14 LTC6401IUD-14
Contextual Info: LTC6401-14 2GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2GHz –3dB Bandwidth Fixed Gain of 5V/V 14dB –91dBc IMD3 at 70MHz (Equivalent OIP3 = 49.3dBm)

Contextual Info: Electrical Specifications Subject to Change LTC6401-20 1.3GHz Low Noise, Low Distortion Differential ADC Driver for 140MHz IF FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.3GHz –3dB Bandwidth Fixed Gain of 10V/V 20dB 40.8dBm OIP3 at 140MHz

ltspice transformer

Abstract: Low Bias Current Amplifiers Agilent RF MOSFET QFN
Contextual Info: LTC6401-20 1.3GHz Low Noise, Low Distortion Differential ADC Driver for 140MHz IF FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.3GHz –3dB Bandwidth Fixed Gain of 10V/V 20dB –93dBc IMD3 at 70MHz (Equivalent OIP3 = 50.5dBm)

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH