13FEB2004 Search Results

ST M29W800DT

Abstract: M29W800D M29W800DB M29W800DT TFBGA48
Contextual Info: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read ■ Access times: 45, 70, 90ns ■ Programming time – 10µs per Byte/Word typical ■ 19 memory blocks

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONIC5 CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC D IST GP 00 LTR A A 80 2.54 [. 1 O O ] A CAVITY N U M B E R S FOR REF O NLY 1 .60+0.1 3 [.063+.005] 4.00±0. 1 3 [. 157±.005]

74564

Abstract: ic 74564 1274563-3 PT 1132 7456 ic 30CT20 7456 i. c
Contextual Info: TH I S DRAW I NG IS UNPUBLI S HE D. C O P Y RI G HT 20 RELEASED BY TYCO ELECTRONICS CORPORATION. F OR ALL 20 PUBLICATION R 1G H T S L OC RESERVED. D I ST R E V 6 AJ LTR I S I O N S DESCRIPTION DATE REV PER OS I 4 - 0 3 4 5 - 04 r w c ITEMS PACKAGED SEE SEPARATE

114-13056

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT - RELEASED FOR PUBLICATION 6 5 4 3 2 - LOC - ALL RIGHTS RESERVED. - 1 REVISIONS DIST - P LTR D 11.81 DAUGHTERCARD EDGE DESCRIPTION REV PER ECO 14-003443 D 18.40 1.41 TYP HOUSING: LCP, UL94V0, COLOR: BLACK. CONTACT: PHOSPHOR BRONZE.

M29W800D

Abstract: M29W800DB M29W800DT TFBGA48
Contextual Info: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 45, 70, 90ns PROGRAMMING TIME

Contextual Info: M29W800DT M29W800DB 8-Mbit 1 Mbit x 8 or 512 Kbits x 16, boot block 3 V supply flash memory Features „ Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read „ Access times: 45, 70, 90 ns „ Programming time – 10 s per byte/word typical

M29W800D

Abstract: M29W800DB M29W800DT TFBGA48 SE2841 2-25b
Contextual Info: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical

M29W800D

Abstract: M29W800DB M29W800DT TFBGA48
Contextual Info: M29W800DT M29W800DB 8-Mbit 1 Mbit x 8 or 512 Kbits x 16, boot block 3 V supply flash memory Features • Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read ■ Access times: 45, 70, 90 ns ■ Programming time – 10 µs per byte/word typical

M29W800D

Abstract: M29W800DB M29W800DT TFBGA48
Contextual Info: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical ■ 19 MEMORY BLOCKS

Contextual Info: 2 THIS D R A WI N G IS C O P Y R I G H T 20 UNPUBLISHED. RELEASED ALL FOR PUBLICATION RI GHTS 20 LOC R ES ERVED. GP DIST REVISIONS 00 LTR DESCRIPTION REVISED A2 DAUGHTERCARD EDGE- PER KH AS BLACK. CONTACT: 0.76jjm MIN GOLD IN PAD C O N T A C T A R E A , I . 2 7 jum

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 2 3 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. By - REVISIONS LOC DIST GP 00 LTR DESCRIPTION DWN DATE RK HMR 11 MAR 11 REVISED PER E C O -1 1 -0 0 4 8 3 5 APVD RECEPTACLE CONTACTS: COPPER ALLOY. RECEPTACLE SHIELD: COPPER ALLOY.