13JAN11 Search Results

Contextual Info: VS-MURD620CTPbF Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt FEATURES Base common cathode 4 • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature 2 Common cathode 1 3 Anode

Contextual Info: New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V a 28 Qg (Typ.)

Contextual Info: New Product SiZ904DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () Max. ID (A) 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V 0.0135 at VGS = 10 V 0.017 at VGS = 4.5 V 12a 12a 16a 16a

Contextual Info: VS-6CWH02FNPbF Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt FEATURES Base common cathode 4 • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature 2 Common cathode 1 3 Anode

Contextual Info: BAS86-M Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.

BAT86

Contextual Info: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.

Contextual Info: VSKDS409/150 Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • • • • • • 175 °C TJ operation Low forward voltage drop High frequency operation Low thermal resistance Compliant to RoHS Directive 2002/95/EC

V15X5ZT

Contextual Info: V5X5Z, V15X5Z Z-Foil Vishay Foil Resistors Ultra High Precision Bulk Metal Z-Foil Chip Resistors for Use in Hybrid Circuits with TCR of 0.05 ppm/°C, Tolerance to 0.005 %, and Load Life Stability of ± 0.01 % for 10 000 h FIGURE 1 - TRIMMING CHIP RESISTORS

311E-15

Abstract: 8082 8-PIN
Contextual Info: New Product SiZ916DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A)g 0.0064 at VGS = 10 V 16a 0.0100 at VGS = 4.5 V 16a 0.0013 at VGS = 10 V 40a 0.00175 at VGS = 4.5 V

Contextual Info: V5X5P, V15X5P, V15X10P Vishay Foil Resistors Bulk Metal Foil Technology Discrete Chips with TCR of 2 ppm/°C, Tolerance to 0.005 %, and Load Life Stability of ± 0.01 % for 10 000 h for use in Hybrid Circuits FIGURE 1 - TRIMMING CHIP RESISTORS V5X5P Trim Points

Contextual Info: BAS86-M Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.

Contextual Info: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.

VS-HFA04SD60

Abstract: VS-HFA04SD60SPbF
Contextual Info: VS-HFA04SD60SPbF Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 4 A FEATURES 2, 4 1 N/C D-PAK TO-252AA • • • • • • • • 3 Anode Ultrafast recovery time Ultrasoft recovery Very low IRRM Very low Qrr Guaranteed avalanche Specified at operating temperature

Contextual Info: New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V a 28 Qg (Typ.)

Contextual Info: New Product SiZ920DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 0.0071 at VGS = 10 V 40a 0.0089 at VGS = 4.5 V 40a 0.0030 at VGS = 10 V 40a 0.0035 at VGS = 4.5 V

Contextual Info: New Product SiZ902DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 0.0120 at VGS = 10 V 16a 0.0145 at VGS = 4.5 V 16a 0.0064 at VGS = 10 V 16a 0.0083 at VGS = 4.5 V

Y4033

Abstract: V15X5ZT
Contextual Info: V5X5Z, V15X5Z Z-Foil Vishay Foil Resistors Ultra High Precision Bulk Metal Z-Foil Chip Resistors for Use in Hybrid Circuits with TCR of 0.05 ppm/°C, Tolerance to 0.005 %, and Load Life Stability of ± 0.01 % for 10 000 h FIGURE 1 - TRIMMING CHIP RESISTORS

Contextual Info: New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V 28a 13.5 nC

Contextual Info: New Product SiZ904DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () Max. ID (A) 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V 0.0135 at VGS = 10 V 0.017 at VGS = 4.5 V 12a 12a 16a 16a

Contextual Info: New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V a 28 Qg (Typ.)

Contextual Info: VS-6CWH02FNPbF Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt FEATURES Base common cathode 4 • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature 2 Common cathode 1 3 Anode

Contextual Info: RPS 250 Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • High power rating: 250 W  High overload capability up to 4 times nominal power see energy curve  Easy mounting  Low thermal radiation of the case

Contextual Info: RPS 250 Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • High power rating: 250 W  High overload capability up to 4 times nominal power see energy curve  Easy mounting  Low thermal radiation of the case

Contextual Info: New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V a 28 Qg (Typ.)