140 TELEFUNKEN Search Results

BAY135

Contextual Info: BAY135 Vishay Telefunken Switching Diode Features D Silicon Planar Diode D Very low reverse current Applications 94 9367 Protection circuits, delay circuits Order Instruction Type BAY135 Type Differentiation VRRM = 140 V Ordering Code BAY135–TAP Remarks

i3 pin configuration diagram

Abstract: i3 pin configuration max 8724 CIRCUIT diagram flyback tv configuration TEA 8172
Contextual Info: TEA 8172 TELEFUNKEN Semiconductors TV Vertical Deflection Output Amplifier Technology: Bipolar Features D Output peak current, I5 = 2 A D Flyback current, peak to peak, I3 = 3 A D Thermal protection, Tj  140°C Case: 7 leads special plastic case Block diagram

ON 4173

Contextual Info: TDA 4173 TELEFUNKEN Semiconductors TV Vertical Deflection Output Amplifier Technology: Bipolar Features D Output peak current, I5 = 2.5 A D Flyback current, peak to peak, I3 = 4 A D Thermal protection, Tj  140°C Case: 7 leads special plastic case Block diagram

ON 4173

Abstract: telefunken rr 100 4173 diode i3 pin configuration ic tda for tv class d amplifier tda 4173 i3 pin configuration diagram I-512 flyback data pin diagram TDA4173
Contextual Info: TDA 4173 TELEFUNKEN Semiconductors TV Vertical Deflection Output Amplifier Technology: Bipolar Features D Output peak current, I5 = 2.5 A D Flyback current, peak to peak, I3 = 4 A D Thermal protection, Tj  140°C Case: 7 leads special plastic case Block diagram

i3 pin configuration diagram

Abstract: 8172
Contextual Info: TEA 8172 TELEFUNKEN Semiconductors TV Vertical Deflection Output Amplifier Technology: Bipolar Features D Output peak current, I5 = 2 A D Flyback current, peak to peak, I3 = 3 A D Thermal protection, Tj  140°C Case: 7 leads special plastic case Block diagram

TLXR440

Abstract: E2258
Contextual Info: 17E D A TELEFUNKEN ELECTRONIC •¡niLItFlUlMKIMelectronic C r M ] t v e ‘fechrto*o$pe 4 ■ fiTSOOTb 000^140 0 ■ ALGÓ TLXR440. Extreme Bright Red LED 0 3 mm T1 in tinted diffused package Type Technology Red TLXR 440, GaAIAs on GaAs Angle of half intensity

TRANSISTOR BC 136

Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available

el-804

Abstract: telefunken s 150 el804
Contextual Info: M ,XSSWH*i”"' TELEFUNKEN lEL 8041 Parallelspeisung Breitband Endpentode M e ß - und Betriebswerte Ua 140 U g2 170 Rk 160 V Uf V lf 700 V mA Q la lg2 S 70 5 10 mA mA mA/V Ri 14 kQ l'-gilgi 9 U g , . lg , £ + 0 , 3 ^ - 1 ,3 6,3 V Kapazitäten Grenzwerte

30407

Contextual Info: LUFTFAHRTRÖHRE LK 121 LIEFERER STABILOVOLTG.mbH. M etallstab ilisato r M STV 140/60 Z ANFOROERUNGSZEICHEN Ln 30407 V o rlä u fig e technische D aten 1. Abm essungen der Röhre m U a llit c h t r Ho!brn¡ ru fl* ie fi Kathode Anschlüsse von unten gegen die Röhre gesehen.

el804

Abstract: RFK20 ufu6 el-804
Contextual Info: ¡lÄ £ S w'H,i”ns T E L E F U N K E N Parallelspeisung lEL 8041 B re itb a n d E n d p en tod e M eß- und Betriebswerte 140 170 160 Ua Ug 2 Rk la V V Q 70 mA 5 mA Ig2 S 10 m A /V Ri 14 kQ ^g2/gi U g ie Igi ^ 6,3 Uf U 700 V mA 9 + 0 , 3 ¿lA - 1 , 3

50HZ generator sinus

Abstract: 4500a T1258N
Contextual Info: TELEFUNKEN ELECTRONIC file D • 8 ^ 2 0 0 % 0001,217 0 m A I S S T1258N Typenrelhe/Type range_ T1258N_ 200_400_600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values

6A1S

Abstract: DIN40040 T198N
Contextual Info: TELEFUNKEN ELECTRONIC T 198 N Ö1C D • fl'ìSOD'ib D0DL131 1 ■ AL£G Typenreihe/Type range_ T198N_200_ 400_ 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U d r m . U rrm Periodische Vorwärts-und

T210N

Abstract: 450C
Contextual Info: TELEFUNKEN E LECTRONIC Typenrelhe/Type range Ö1C i> _ T210N • Ô^SOO'ïb DDGblBb D ■ ALG6 1 7 ~ - 200 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U drmiU rrm Periodische Vorwärts-und Rückwärts-Spitzensperrspannung

BY228

Abstract: BY228 V BY228 Diode BY-228
Contextual Info: T e m ic BY228/13.BY228/15 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features • Glass passivated junction • Hermetically sealed package Applications High voltage rectifier Efficiency diode in horizontal deflection circuits ci Absolute Maximum Ratings

jis s25c

Contextual Info: TELEFUNKEN ELECTRONIC fllC D Bi ä'lEDO'ib QOOblOfl b m t\LG G T 115 N Typenreihe/Type ränge T115N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte r r m Periodische Vorwärts-und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

by228

Abstract: BY228 Diode BY228 V
Contextual Info: BY228/13.BY228/15 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package Applications High voltage rectifier Efficiency diode in horizontal deflection circuits 94 9588 Absolute Maximum Ratings Tj = 25_C

BY228

Contextual Info: BY228/13.BY228/15 Vishay Telefunken Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package Applications High voltage rectifier Efficiency diode in horizontal deflection circuits 94 9588 Absolute Maximum Ratings Tj = 25_C

T398N

Contextual Info: TELEFUNKEN ELECTRONIC fllC I> • * s'~ z 6 f i ^ O D U DQDbl77 3 »ALGfi X : T398N Typenrelhe/Type range_ T398N_ 200_400_ Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Üdrmi Urrm Periodische Vorwärts- und

Contextual Info: BAY135 V IS HAY Vishay Telefunken Silicon Planar Diode Features • Very low reverse current % Applications Protection circuits, delay circuits Absolute Maximum Ratings Tj = 25° C Parameter Peak reverse voltage, non repetitive Repetitive peak reverse voltage

Diode BAY 54

Contextual Info: Te m ic BAY 135 TELEFUNKEN Semiconductors Silicon Planar Diode Features • Very lo w reverse current Applications P rotection circu its, d e la y circu its Absolute Maximum Ratings Tj = 2 5 °C Param eter Test C onditions Peak reverse voltage, non repetitive

Contextual Info: BAY135_ Vishay Telefunken Silicon Planar Diode Features • Very low reverse current Applications 94 9367 Protection circuits, delay circuits Absolute Maximum Ratings Tj = 2 5 ° C Sym bol Value P e a k reverse voltage, non repetitive Param eter V RSM

26H4911

Abstract: S292P 51366SP
Contextual Info: VISHAY Vishay Telefunken Wafer Process Qualification Photo Detector Operating Life Test Description Device Type Duration Sample Size Failures Tamb = 25°C, V R = 5 V, IRA = 1.0 nA S292P 3 lots 2,000 h 150 Tamb = 100°C, V R = 5 V, IRA = 1.0 nA S292P 2,000 h

SF5400

Abstract: SF5401 SF5402 SF5403 SF5404 SF5405 SF5406 SF5407 SF5408
Contextual Info: SF5400.SF5408 Vishay Telefunken Super Fast Soft Recovery Rectifier Features D D D D Glass passivated Hermetically sealed axial leaded glass envelope Low reverse current High reverse voltage Applications Switched mode power supplies High–frequency inverter circuits

Contextual Info: SF5400.SF5408 Vishay Telefunken Super Fast Soft Recovery Rectifier Features • G lass passivated • H erm etically sealed axial leaded glass enve­ lope • Low reverse current • High reverse voltage Applications 94 9588 Sw itched m ode pow er supplies