140.06 Search Results

Sawtek 851901

Abstract: 140.06
Contextual Info: 140 MHz Bandpass Filter 500 kHz Bandwidth Part Number 851901 Data Sheet Typical Performance Parameter Center Frequency 139.94 Typical Maximum 140 140.06 dB - 19.5 21.5 1 dB Bandwidth MHz 0.3 0.325 - 3 dB Bandwidth MHz 0.5 0.56 - 40 dB Bandwidth MHz - 1.73

transistor c 5586

Abstract: TSC 7211 marking 651 sot26 TS9004 transistor 15478 A 68067 8467 transistor
Contextual Info: TS9004 300 mA CMOS LDO Adjustable Output Voltages SOT-25 SOT-26 General Description The TS9004 family of positive, linear regulators feature low ground current 35µA typ. with low dropout voltage, making them ideal for battery applications. The space-saving SOT-26 and SOT-25

Contextual Info: PACIFIC M ONOLITHICS DATA S1-11=1=7 GALLIUM ARSENIDE SYSTEMS MODEL PM-AP0602 2-6 GHz MEDIUM-POWER MMIC AMPLIFIERS FEATURES 0.25W OUTPUT POWER 10 dB GAIN ON-CHIP GAIN CONTROL SINGLE SUPPLY VOLTAGE SMALL SIZE Pacific Monolithics medium-power amplifier chips are small, highly reliable and operate well within the

Contextual Info: INTELLIGENT INTERACTIVE SYNTHESIZER SURFACE MOUNT MODEL: LFSW514-50 50 - 140 MHz WIDE BANDWIDTH FEATURES: ► Exceptionally Low Phase Noise ► Interactive Communication ► Standard Programming Interface ► Ultra Wide Tuning Range ► Lead Free - RoHS Compliant

Contextual Info: INTELLIGENT INTERACTIVE SYNTHESIZER SURFACE MOUNT MODEL: LFSW514-50 50 - 140 MHz wide bandwidth FEATURES: ► Exceptionally Low Phase Noise ► Interactive Communication ► Standard Programming Interface ► Ultra Wide Tuning Range ► Lead Free - RoHS Compliant

4017 pin configuration

Contextual Info: Mini-Circuits - Specification for Amplifier - MNA-6 Amplifier print this page MNA-6 Frequency GAIN, dB Maximum Power, dBm Dynamic Range VSWR MHz DC Power NF dB Typ. IP3 dBm Typ. Thermal resistance CurØjc In Out rent Volt V. °C/W Typ. Typ. (mA) 500-2500

Linear Regulator

Abstract: AME8804
Contextual Info: AME AME8804 n General Description The AME8804 family of positive, linear regulators feature low ground current 35µA typ. with low dropout voltage, making them ideal for battery applications. The space-saving SOT-26/TSOT-26 and SOT-25/TSOT-25 packages are attractive for "Pocket" and "Hand Held" applications.

transistor c 4793

Abstract: GTM 5010 52034 A 68067 transistor c 5586 GQ2143
Contextual Info: ISSUED DATE :2005/01/24 REVISED DATE : GQ2143 C M O S P o s i t i v e Vo l t a g e R e g u l a t o r Description The GQ2143 of positive, linear regulators feature low quiescent current 35 A typ. with low dropout voltage, making them ideal for battery applications.

D1005

Abstract: 22DSBA0423 DM6030HK TS3332LD XD1005-BD XD1005-BD-000V XD1005-BD-EV1
Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier January 2007 - Rev 16-Jan-07 D1005-BD Features Ultra Wide Band Driver Amplifier Self Bias Architecture 23.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

BY393

Abstract: BY339 I32005 t3 055e 40555 6628e 12JAN 6819e BY294 SP320
Contextual Info: Product Characterization Report for the SP320 Family of Products Prepared By: Salvador Wu & Greg West Date: March 1, 2007 SP320 Product Family Characterization Report Table of Contents Section Introduction Characterization Procedure Data Summary for Key Parameters

7746-1

Abstract: 7746-1 transistor NSF2250WT1
Contextual Info: NSF2250WT1 NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automovtive keyless entry and TV tuner designs.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

fet B20 p03

Abstract: u7620 DCD-1530 BC148 pin configuration wistron docking foxconn WISTRON power sequence FW82807A Wistron Corporation SC 3062
Contextual Info: ÌÓíêð Ð ±¶»½¬ ½±¼»æ çïòìëÍðïòððï ÐÝÞ ÐñÒæìèòìëÍðïòÈÈÈ ÎÛÊxÍ×ÑÒæ óï Ó±¾•´» ÝÐË Ôîæ ÙÒÜ Ì«¿´¿¬·² ÝÔÕÙÛÒò ×Ó× Ýçèîé í ÷ Ôíæ Í·¹²¿´ î øÝÔÕ ÝÎÌ ÝÑÒÒ

C 6492 -0

Contextual Info: A B C D E G F H REVISIONS B E 3.25 .128 THROUGH HOLE MOUNTING CODE X2 SHOWN F G 1 REV DESCRIPTION, ECN, EAR NO. DATE APP'D A FAMILY DRAWING EAR 13889 AUG17/11 S.M B UPDATE OCT20/11 S.M C PART NUMBER UPDATE MAR15/11 S.M E F ADD UL FILE NUMBER PCB EDGE ADDED

rtd 3 msp430

Contextual Info: ADS1246 ADS1247 ADS1248 www.ti.com SBAS426D – AUGUST 2008 – REVISED MARCH 2010 24-Bit Analog-to-Digital Converters for Temperature Sensors Check for Samples: ADS1246, ADS1247, ADS1248 FEATURES DESCRIPTION • • • • • • • • • The ADS1246, ADS1247, and ADS1248 are

electronic project for beginners

Contextual Info: user's guide to Ready for AVR box version TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having confidence in Mikroelektronika. The primary aim of our company is to design and produce high quality electronic products

transistor 1971 mitsubishi

Abstract: MOS 6520 40 pin marking 4338 sot89 2493 transistor i 2708 9622 transistor MOS 6581 an 17827 MOS marking 843 Mitsubishi 3994
Contextual Info: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26th/Feb.J02 RD01MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,lW DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

MGA-30889

Abstract: MGA30889 MGA30889-blkg 30889 MGA 30889 DB 16-16 MURATA GRM1555C1H101JZ01 LL1005-FHL5N6 murata GRM155R71C104KA88D mga-3*89
Contextual Info: MGA-30889 40MHz - 2600MHz Flat Gain High Linearity Gain Block Data Sheet Description Features Avago Technologies’ MGA-30889 is a broadband, flat gain, high linearity gain block MMIC amplifier achieved through the use of Avago Technologies’ proprietary 0.25um GaAs

3-pin IC 7806

Abstract: NSF2250WT1 89445 7746-1 transistor 34993
Contextual Info: NSF2250WT1 Advance Information NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automovtive keyless entry and TV tuner

ic 4518 applications

Abstract: 55GN01M transistor 7089 TRANSISTOR 6019 ic 8705 am
Contextual Info: 5Ordering number : ENN7541 55GN01M NPN Epitaxial Planar Silicon Transistor 55GN01M UHF Wide-band Low-noise Amplifier Applications Features • • Package Dimensions High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2=10dB typ f=1GHz . unit : mm

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

136.21

Abstract: 901 704 16 08 55 TGA4501-EPU TGA4501-SCC 914-28 51815
Contextual Info: S-Parameter Data for TGA4501-SCC TGA4501-EPU Vd = 6V, Id = 2.12A ±5% Frequency GHz 20 20.1 20.2 20.3 20.4 20.5 20.6 20.7 20.8 20.9 21 21.1 21.2 21.3 21.4 21.5 21.6 21.7 21.8 21.9 22 22.1 22.2 22.3 22.4 22.5 22.6 22.7 22.8 22.9 23 23.1 23.2 23.3 23.4 23.5

55GN01M

Contextual Info: 注文コード No. N 7 5 4 1 55GN01M 三洋半導体データシート N 55GN01M 特長 NPN エピタキシァルプレーナ型シリコントランジスタ UHF低雑音広帯域増幅用 ・しゃ断周波数が高い：fT=5.5GHz typ。 ・高利得である

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further