D1005 Search Results

D1005

Abstract: 22DSBA0423 DM6030HK TS3332LD XD1005-BD XD1005-BD-000V XD1005-BD-EV1
Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier January 2007 - Rev 16-Jan-07 D1005-BD Features Ultra Wide Band Driver Amplifier Self Bias Architecture 23.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

Contextual Info: bDE D M 6133107 OODOTlfl blû • S M L B - 'T-1>\-ZS SEMELAB SEMELAB PLC D1005UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RFFET 80W -28V -175M H z SINGLE ENDED MECHANICAL DATA Dim ensions FEATURES

D1005

Abstract: mmic distributed amplifier XD1005-QT XD1005-QT-0G00 XD1005-QT-EV1
Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN February 2007 - Rev 08-Feb-07 D1005-QT Features Ultra Wide Band Driver Amplifier Self Biased Architecture 18.0 dB Small Signal Gain 6.0 dB Noise Figure RoHS Compliant SMD, 3x3 mm QFN Package 100% RF, DC, and Output Power Testing

Contextual Info: TetraFET D1005UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: II I TetraFET itti SEME il D1005UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 8 0 W -2 8 V -1 7 5 M H z SINGLE ENDED *• F 4 FEATURES t H y • SIMPLIFIED AMPLIFIER DESIGN . K i J • SUITABLE FOR BROAD BAND APPLICATIONS

D1005UK

Contextual Info: TetraFET D1005UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS

D1005

Abstract: XD1005-QT XD1005-QT-0G00 XD1005-QT-EV1
Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN February 2007 - Rev 08-Feb-07 D1005-QT Features Ultra Wide Band Driver Amplifier Self Biased Architecture 18.0 dB Small Signal Gain 6.0 dB Noise Figure RoHS Compliant SMD, 3x3 mm QFN Package 100% RF, DC, and Output Power Testing

D1005UK

Contextual Info: TetraFET D1005UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS

D1005UK

Abstract: D1005
Contextual Info: TetraFET D1005UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN December 2006 - Rev 11-Dec-06 D1005-QT Features Ultra Wide Band Driver Amplifier Self Biased Architecture 18.0 dB Small Signal Gain 6.0 dB Noise Figure RoHS Compliant SMD, 3x3 mm QFN Package 100% RF, DC, and Output Power Testing

Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier July 2008 - Rev 14-Jul-08 D1005-BD Features Ultra Wide Band Driver Amplifier Self Bias Architecture 23.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier January 2007 - Rev 16-Jan-07 D1005-BD Features Ultra Wide Band Driver Amplifier Self Bias Architecture 23.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

Contextual Info: TetraFET D1005UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: IUI TetraFET =MMË SEM E D1005UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 8 0 W -2 8 V -1 7 5 M H z SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN H K I J • SUITABLE FOR BROAD BAND APPLICATIONS

BATWING

Contextual Info: 29317.14 PROTECTED QUAD POWER DRIVERS Providing improved output current limiting, the UDK, UDN, and UDQ2559B, EB, and LB quad power drivers combine NAND logic gates and high-current bipolar outputs with complete output protection. Each of the four outputs will sink 700 mA in the ON state. The outputs

Contextual Info: AC Line Filters SU Coils, SU 10VD High Frequency Type Overview Applications The KEMET SU Coils, SU 10VD High Frequency Type AC line filters are offered in a wide variety of sizes and specifications. • Consumer Electronics • Common mode choke Benefits – High Frequency Type

submersible motor winding formula

Abstract: 3G3MV A2007 Manual 3G3MV-A4040 3G3MV manual inverter omron sysdrive 3G3MV-A2004
Contextual Info: Cat. No. I527-E2-02 USER’S MANUAL SYSDRIVE 3G3MV Multi-function Compact Inverter Thank you for choosing this SYSDRIVE 3G3MV-series product. Proper use and handling of the product will ensure proper product performance, will lengthen product life, and may prevent possible accidents.

TPS5117

Abstract: SN0608098 EMC4002 MEC5035 SRN100KJ-6-GP BCM5761 WISTRON power sequence EPSON C691 MAIN THERMAL fuse M33 07F schematic lcd inverter dell
Contextual Info: 5 4 3 2 1 D D FOOSE 15" UMA Schematics Document uFCPGA Mobile Penryn www.kythuatvitinh.com 2008-06-04 Intel Cantiga-GM + ICH9M C C REV : -1 B B DY : Nopop Component 5761 : Use BCM5761E 5756 : Use BCM5756M B_TPM : Use LOM TPM C_TPM : Use China TPM A A Wistron Corporation

kbc1070

Abstract: fds8884 AM4825P_AP Entery-3802 ICS9LPRS355 Inventec alcor AU6371 CHENMKO_CHPZ6V2_3P fix40 Socket AM2
Contextual Info: DDD UMA SI Build Final 2007.03.30 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : DDD UMA SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF AX1 48 TABLE OF CONTENTS

tps51620

Abstract: alc889 bq24721 tps51125 ITE8512E C5134 TI_BQ24721C_QFN_32P INVENTEC JMB385 fds8884
Contextual Info: www.kythuatvitinh.com KiliManjaro CS Build A02 2008.02.04 Digitally signed by dd DN: cn=dd, o=dd, ou=dd, email=dddd@yahoo. com, c=US Date: 2009.11.29 17:18:29 +07'00' EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX

tps51125

Abstract: alc889 c2233 fds8884 bq24721 BQ24721C Inventec IT8512E tps51125 kbc AR8121
Contextual Info: TETON2 DDRIII-Pre MV BUILD 2008.06.18 EE DATE DATE POWER DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : TETON2 SIZE CODE A3 CS SHEET DOC. NUMBER REV 1310A22077-0-MTRA02 1 OF 53

BFM12

Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK
Contextual Info: R.F. Division Semelab Device Type Working Power Working b v dss *D Freq. W atts Voltage Volts Am ps Min. Gain 13db BFM12 4 28 70 5 200MHz BFM21 0.75 0.75 4 28 12 65 0,2 0.2 2.5GHz 2.5GHz 1 2GHz 11db 13db 1.6 2 1GHz 13db 1GHz 13db 1GHz 13db 0.8GHz 13db 16db

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

d100

Contextual Info: Voltage Sensitive Relays WILMAR Protective Relays – D100X Series, Close Differential Function: • ANSI/IEEE C37.90-1978 • UL file No. E58048 • CSA file No. LR61158 0.5 Close Differential Relays are voltage sensitive. The pick-up and drop-out voltage settings are independently adjustable, which allows precise setting of the