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    Siemens 3SU14012BG301AA0

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    DigiKey 3SU14012BG301AA0 Box 2 1
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    Siemens 3SU14012BG603AA0

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    DigiKey 3SU14012BG603AA0 Box 1
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    Siemens 3SU14012BG003AA0

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    DigiKey 3SU14012BG003AA0 Box 1
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    Mouser Electronics 3SU14012BG003AA0
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    RS 3SU14012BG003AA0 Bulk 1
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    Siemens 3SU14012BG001AA0

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    DigiKey 3SU14012BG001AA0 Box 1
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    Mouser Electronics 3SU14012BG001AA0
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    RS 3SU14012BG001AA0 Bulk 1
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    Siemens 3SU14012BG401AA0

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    DigiKey 3SU14012BG401AA0 Box 1
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    Mouser Electronics 3SU14012BG401AA0
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    RS 3SU14012BG401AA0 Bulk 1 5 Weeks 1
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    14012BG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MC14012B Dual 4-Input NAND Gates The MC14012B dual 4−input NAND gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.


    Original     		PDF MC14012B PDIP-14 SOIC-14 14012BG MC14012BCP MC14012B/D

    14012BG

    Abstract: MC14012B MC14012BCP CD4000 MC14012BCPG MC14012BD SOIC-14 14012B
    Text: MC14012B Dual 4-Input NAND Gates The MC14012B dual 4-input NAND gates are constructed with P-Channel and N-Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.


    Original     		PDF MC14012B MC14012B CD4000 PDIP-14 MC14012BCP SOIC-14 14012BG MC14012BCP MC14012BCPG MC14012BD SOIC-14 14012B

    gate drive protection inverter

    Abstract: 47 vfk 4-input nand gates ttl power inverter circuit diagram schematics voltage inverter schematic TL 413 CD4000 series applications MC14012BCP p-Channel Logic Level Enhancement Mode schematic diagram inverter control
    Text: MC14012B Dual 4-Input NAND Gates The MC14012B dual 4-input NAND gates are constructed with P-Channel and N-Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.


    Original     		PDF MC14012B MC14012B CD4000 PDIP-14 MC14012BCP SOIC-14 MC14012B/D gate drive protection inverter 47 vfk 4-input nand gates ttl power inverter circuit diagram schematics voltage inverter schematic TL 413 CD4000 series applications MC14012BCP p-Channel Logic Level Enhancement Mode schematic diagram inverter control

    Untitled

    Abstract: No abstract text available
    Text: MC14012B Dual 4-Input NAND Gates The MC14012B dual 4−input NAND gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.


    Original     		PDF MC14012B MC14012B CD4000 MC14012B/D

    MC14012

    Abstract: mc14012b 14012BG
    Text: MC14012B Dual 4-Input NAND Gates The MC14012B dual 4−input NAND gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.


    Original     		PDF MC14012B PDIP-14 MC14012BCP CD4000 MC14012B/D MC14012 14012BG

    CD4000

    Abstract: MC14012B MC14012BCP MC14012BCPG MC14012BD MC14012BDG MC14012BDR2 MC14012BDR2G 14012BG 14012B
    Text: MC14012B B−Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.


    Original     		PDF MC14012B CD4000 PDIP-14 MC14012BCP SOIC-14 MC14012B/D MC14012B MC14012BCP MC14012BCPG MC14012BD MC14012BDG MC14012BDR2 MC14012BDR2G 14012BG 14012B

    Untitled

    Abstract: No abstract text available
    Text: MC14012B Dual 4-Input NAND Gates The MC14012B dual 4−input NAND gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.


    Original     		PDF MC14012B MC14012B CD4000 MC14012B/D