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Embest Info&Tech Co Ltd SBC8140 WITH 4.3LCD Evaluation Board, Sbc, Dsp; Silicon Manufacturer:Texas Instruments; Silicon Family Name:Dm37X; Core Architecture:Arm; Core Sub-Architecture:Cortex-A8; Silicon Core Number:Dm3730; Product Range:-; No. Of Bits:32Bit Rohs Compliant: Yes \|Embest SBC8140 WITH 4.3LCD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SBC8140 WITH 4.3LCD	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

140WI Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IEEE472 Abstract: MOC2R60 MOC2R60-15 RS-443 2 amp triac driver opto TRIAC 226 a Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MOC2R60-10/D DATA Advance Information POWER OPTOTMIsolator MOC2R60”I 2 Amp Random= Phase ~iac MOC2R60-15 Output *Motorola This device consists of a gallium arsenide infrared emitiing dode optically coupled	Original	PDF	MOC2R60-10/D MOC2R60 MOC2R60-15 140WI 0Y3521431 M070ROLA 2H609 2PHX33734P MOC2R60-1 IEEE472 MOC2R60-15 RS-443 2 amp triac driver opto TRIAC 226 a
MMB25V6ALT1 Abstract: MMBZ15VALT1 MMBZ20VALT1 MMBZ20VALTI BZ5V6 Text: ‘ MOTOROLA SEMICONDUCTOR o TECHNICAL Order this document bv MMBZ5V6ALT1/D DATA MMBZ5V6ALTI MMBZ6V2ALTI MMBZ15VALTI 5.6, 6.215 &20 Volt SOT-23 Dual Monolithic Common Anode Zeners * MMBz20vALT4~*, Motorola Transient Voltage Suppressors for ESD Protection	Original	PDF	MMBZ15VALTI OT-23 MMBz20vALT4~ 140WI OW21W15 24W609 2PHX31323E1 MMB25V6ALT1 MMBZ15VALT1 MMBZ20VALT1 MMBZ20VALTI BZ5V6
IMHPM7B16A120B Abstract: MHPM7B16A120B Text: . MOTOROLA SEMICONDUCTOR TECHNICAL Order thie document bv MHPM7B16A120B/D DATA IMHPM7B16A120B Hybrid Power Module Motorola Preferwd Device Integrated Power Stage for 3.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output	Original	PDF	MHPM7B16A120B/D IMHPM7B16A120B MHPM7B16A120B OH5214315 140WI IPHX3601M 2W609 MHPM7B16A120BID IMHPM7B16A120B MHPM7B16A120B
47-6 k5 diode Abstract: Motorola 022 6934 MHPM7B30A60B rectifier bridge 300v 30a Text: MAXIMUM, DEVICE RATINGS continued (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit IGBT Reverse Voltage VCES 600 v Gate-Emitter Voltage. VGES +20 v [c 30 A BRAKE CIRCUIT - \ , : - - Continuous IGBT Collector Current Peak IGBT Collector Current (PW = 1.0 ms) (2)	Original	PDF	-40to MHPM7B30A60B 140WI 1PHX36017+ MHPM7B30A60BID 47-6 k5 diode Motorola 022 6934 MHPM7B30A60B rectifier bridge 300v 30a