14A 50V P-CHANNEL MOSFET Search Results

14n05l

Abstract: FP14N05L RFD14N05LSM9A 14N05
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L in te v s il D a ta S h e e t A p r i l 1999 14A, SOV, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs 2 2 4 6 .3 Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

14n05l

Abstract: 14N05LSM RFD14N05L
Contextual Info: is HARFRIS U U R F D 14N 0 5 L , R F D 14N 0 5 L S M , R F P 1 4 N 0 5 L. S E M I C O N D U C T O R 14A, 50V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Packaging Features JE D EC TO-22QAB • 14A , 50V • ^DS{ON = 0.10012

14N05

Abstract: FT4N05 F14N05
Contextual Info: f f ï H A ^ 8 E“ ' R R RFD14N05, RFD14N05SM, RFP14N05 I S 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO -220A B • 14A, 5 0 V • r DS ON = 0.10012 • T e m p e ra tu re C o m p e n s a tin g P S P IC E M odel

FP14N

Contextual Info: H A R f r is May 1991 R F D 1 4 N 5 R F P / 1 5 4 S N M 5 N-Channel Enhancement Mode Power Field Effect Transistors MegaFETs Packages Features T O -22 0 A B TOP VIEW • 14A, 50V • RDS(on) = ° - 1 fl DRAIN (FL A N G E ) • UIS SOA Rating Curve (Single Pulse)

d14n05

Abstract: 14n05l FP14N05L d14n05l 05lsm FP14N RFP14N05L
Contextual Info: m H a rris R F D 1 4 N 0 5 L / 0 5 L S M R F P 1 4 N 0 5 L June 1992 N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Packages Features R FD 14N 05L T O -251 TOP VIEW • 14A, 50V • rDS(on) = 0.1 o o n • UIS S O A Rating C urve (Single Pulse)

3020 transistor

Abstract: 4707 N Channel MOSFETs MPM3002 MPM3012 P channel MOSFET 10A schematic P-channel MOSFET 100V, 10 Amps p-channel power mosfet 14A S 170 MOSFET TRANSISTOR P-channel MOSFET 100V, 20 Amps
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing

3020 transistor

Abstract: P-channel MOSFET 100V, 10 Amps P-channel MOSFET 100V, 20 Amps
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing

P-channel MOSFET 100V, 10 Amps

Abstract: 3020 transistor 4707 N Channel MOSFETs P-channel MOSFET 100V, 20 Amps 150 amp H-bridge Mosfet MPM3002 MPM3012 MSK3020 drive motor 10A with transistor P channel MOSFET 100V H-bridge Mosfet
Contextual Info: M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing

3020 transistor

Abstract: P-channel MOSFET 100V, 20 Amps P-channel MOSFET 100V, 10 Amps 4707 N Channel MOSFETs drive motor 10A with transistor 14a 50v p-channel mosfet MPM3002 MPM3012 20 amp MOSFET transistor 100v P-Channel MOSFET
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing

3020 transistor

Contextual Info: M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing

IRFN9140

Contextual Info: SEME IRFN9140 LAB MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 –100V –14A Ω 0.020Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

IRFN9140SMD

Contextual Info: IRFN9140SMD MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6

30ym

Contextual Info: m HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM130 D, R, H 2N7271D, 2N7271R 2N7271H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 14A, 100V, RDS<on) - 0.180Q TQ-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: IRFN9140SMD MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6

BU271

Abstract: TA9770
Contextual Info: BUZ71 intefeil Ju n e 1999 D ata S h e e t F ile N u m b e r 2 4 1 8 .2 Features 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET • 14A, 5 0V This is an N -Channel enhancem ent mode silicon gate power • rDS ON = 0.100S2 field effect transistor designed for applications such as

12v transformer

Contextual Info: SI H A R R IS S E M I C O N D U C T O R FRM130D, FRM130R, FRM130H 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features TO-204AA • 14A, 100V, RDS on = 0.180Q • Second Generation Rad Hard MOSFET Results From New Design Concepts

2E12

Abstract: 2N7271D 2N7271H 2N7271R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM130 D, R, H 2N7271D, 2N7271R 2N7271H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 14A, 100V, RDS(on) = 0.180Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

ROA 500V

Abstract: tda 2200 FAP-450
Contextual Info: FU JI e iu M s u 'iJ t ìU K FAP-450 N-channel MOS-FET FAP-IIS Series 500V 14A High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGs = ± 30V Guarantee Repetitive Avalanche Rated TO-3P 4.5 iE > Applications - Switching Regulators

Contextual Info: MITSUBISHI Neh POWER MOSFET FK14VS-9 HIGH-SPEED SWITCHING USE FK14VS-9 • V d s s . 450V • rDS ON (MAX) .0 .6 5 Q • I D .14A

Contextual Info: MITSUBISHI Neh POWER MOSFET FK14UM-9 HIGH-SPEED SWITCHING USE APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Tc = 25°C Ratings Unit V dss Symbol Drain-source voltage Parameter Vgs = OV 450 V V gss Gate-source voltage

1 R 10E 3C, diode

Contextual Info: MITSUBISHI Neh POWER MOSFET FK14SM-9 HIGH-SPEED SWITCHING USE FK14SM-9 OUTLINE DRAWING Dim ensions in mm 4.5 15 • V dss . 450V • rDS ON (MAX) . 0 .6 5 Q

Contextual Info: FRM130D, FRM130R, FRM130H 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package TO-204AA • 14A, 100V, RDS on = 0.180£i • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

FS14SM16A

Abstract: FS14SM-16A
Contextual Info: MITSUBISHI Neh POWER MOSFET FS14SM-16A HIGH-SPEED SWITCHING USE FS14SM-16A OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 <t>3.2 uX kr • r 4.4 1.0 5.45 5.45 0.6 ] bd^ Q w q w e r V d s s . 8 0 0 V