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Fairchild Semiconductor Corporation F14N05L Electronic Component
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ComSIT USA	F14N05L		392			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Harris Semiconductor RF14N05L Electronic Component
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ComSIT USA	RF14N05L		34			1 - 10 - 100 - 1000 - 10000 -	Get Quote

F14N05 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
f14n05 Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet Title FD1 05, D14 5S P14 5 bt A, V, 00 m, anwer OSTs) utho eyrds ter- July 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs Features These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature	Original	RFD14N05, RFD14N05SM, RFP14N05 175oC TB334 f14n05	PDF
f14n05l Abstract: f14n05 14n05l 14N05 AN9321 RFD14N05L RFD14N05LSM RFD14N05LSM9A RFP14N05L TB334 Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives	Original	RFD14N05L, RFD14N05LSM, RFP14N05L f14n05l f14n05 14n05l 14N05 AN9321 RFD14N05L RFD14N05LSM RFD14N05LSM9A RFP14N05L TB334	PDF
f14n05 Abstract: AN9321 AN9322 RFD14N05 RFD14N05SM RFD14N05SM9A RFP14N05 TB334 mosfet 4413 Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet July 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs • 14A, 50V Formerly developmental type TA09770. Ordering Information PACKAGE 2268.5 Features These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature	Original	RFD14N05, RFD14N05SM, RFP14N05 TA09770. f14n05 AN9321 AN9322 RFD14N05 RFD14N05SM RFD14N05SM9A RFP14N05 TB334 mosfet 4413	PDF
f14n05 Abstract: RFD14N05 RFP14N05 AN9321 AN9322 RFD14N05SM RFD14N05SM9A TB334 Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet January 2002 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives	Original	RFD14N05, RFD14N05SM, RFP14N05 TA09770. f14n05 RFD14N05 RFP14N05 AN9321 AN9322 RFD14N05SM RFD14N05SM9A TB334	PDF
f14n05 Abstract: AN7254 AN7260 AN9321 RFD14N05 RFD14N05SM RFD14N05SM9A RFP14N05 JEDEC TO-251AA Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 S E M I C O N D U C T O R 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-220AB • 14A, 50V SOURCE DRAIN GATE • rDS ON = 0.100Ω • Temperature Compensating PSPICE Model	Original	RFD14N05, RFD14N05SM, RFP14N05 O-220AB 175oC O-251AA RFP14N05 1e-30 f14n05 AN7254 AN7260 AN9321 RFD14N05 RFD14N05SM RFD14N05SM9A JEDEC TO-251AA	PDF
f14n05l Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives	Original	RFD14N05L, RFD14N05LSM, RFP14N05L f14n05l	PDF
f14n05 Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 interrii — 1 D a ta S h e e t J u ly 1 9 9 9 , • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives	OCR Scan	RFD14N05, RFD14N05SM, RFP14N05 TA09770. RFP14N05 AN7260, f14n05	PDF
f14n05 Abstract: RFD14N05SM AN7254 AN9321 AN9322 RFD14N05 RFD14N05SM9A TB334 Contextual Info: RFD14N05, RFD14N05SM Data Sheet 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding	Original	RFD14N05, RFD14N05SM TA09770. f14n05 RFD14N05SM AN7254 AN9321 AN9322 RFD14N05 RFD14N05SM9A TB334	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
Contextual Info: RFD14N05SM9A September 2013 Data Sheet Features N-Channel Power MOSFET 50V, 14A, 100 mΩ • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives	Original	RFD14N05SM9A TA09770. RFD14N05SM9A	PDF
Contextual Info: RFD14N05, RFD14N05SM Data Sheet 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding	Original	RFD14N05, RFD14N05SM TA09770.	PDF
Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Semiconductor Data Sheet July 1999 14A, 50 V, 0.100 Ohm, N-Channel Power MOSFETs File Number 2268.5 Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature	OCR Scan	RFD14N05, RFD14N05SM, RFP14N05 TA09770. 1e-30 73e-4 12e-6) 53e-5) 05e-3 35e-5)	PDF