14APR08 Search Results

Contextual Info: 4 TH IS D R AW IN G IS U N P U B LIS H E D . RELEASED FOR ALL C O P Y R IG H T BY 1TC0 2 3 ELECTRONICS P U B LIC A T IO N R IG H TS R E V I S I ON S GP RESERVED. C O R P O R A TIO N . 00 D E S C R IP T IO N N REVISED PER ECO- JDP CWR 14APR08 -00903 8 D

311SM1068-H4

Contextual Info: FO- 5 5 1 11 -A HONEYWELL P A R T NUMBER .187 DIA X .125 WIDE OIL BRONZE ROLLER .005 FIM REV DOCUMENT 3 0038445 C H A N G E D BY SSK 14APR08 CHECK BLR "A" A .085 MAX P R E T RAVEL A B .5 60 + 0 60 A OPERATING / A P O S ITIO N L 1 •ÛBB+%* DIA HOLE / ¡ \

AEG me 800

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 3 6 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL INTERNATIONAL RIGHTS RESERVED. LOC DIST GP 00 R E VIS IO N S LTR DESCRIPTION DWN APVD ECO -08-009038 14APR08 JDP CWR REVISED PER E C O - 0 9 - 0 2 1 51 0

Contextual Info: Si7922DN Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.195 at VGS = 10 V 2.5 0.230 at VGS = 6 V 2.3 • Halogen-free Option Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®

SS94A2

Contextual Info: co ut I -'j- MICRO SWTTCH a Honeywell Division FED. MFG. CODE LINEAR OUTPUT HALL EFFECT TRANSDUCER CATALOG L I S T I NG THIS SS94A2 DRAWING HONEYWELL. P A RA ME TER S U P P L Y V OL T AG E S U P P L Y CURRENT OUTPUT CURRENT OUTPUT SPAN S E N S IT IV IT Y L I NEAR I T Y

Si2303CDS

Contextual Info: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)

Si7884BDP-T1-E3

Abstract: Si7884BDP
Contextual Info: Si7884BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0075 at VGS = 10 V 58 0.009 at VGS = 4.5 V 53 VDS (V) 40 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) RoHS 21 nC APPLICATIONS COMPLIANT

Contextual Info: New Product Si3473CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.022 at VGS = - 4.5 V -8 0.028 at VGS = - 2.5 V -8 0.036 at VGS = - 1.8 V -8 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ.)

Contextual Info: New Product Si4340CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0094 at VGS = 10 V 0.0125 at VGS = 4.5 V 0.008 at VGS = 10 V 0.0095 at VGS = 4.5 V 14.1 12.2 20 18.9 VDS (V) Channel-1

Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available

ASM 117

Abstract: MAL2 085 vishay AXIAL ELECTROLYTIC capacitors 031-38229 03127101E3 031 AS
Contextual Info: 030/031 AS Vishay BCcomponents Aluminum Capacitors Axial Standard FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Axial leads, cylindrical aluminum case, RoHS COMPLIANT insulated with a blue sleeve • Taped version available for automatic insertion

Contextual Info: Si7904DN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 7.7 0.036 at VGS = 2.5 V 7.0 0.045 at VGS = 1.8 V 6.3 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated

Contextual Info: Si7216DN Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A) 0.032 at VGS = 10 V 6e 0.039 at VGS = 4.5 V 5e Qg (Typ.) 5.5 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

Contextual Info: Si7901EDN Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 6.3 0.068 at VGS = - 2.5 V - 5.3 0.090 at VGS = - 1.8 V - 4.6 • Halogen-free According to IEC 61249-2-21 Available

Contextual Info: Si7911DN Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.051 at VGS = - 4.5 V - 5.7 0.067 at VGS = - 2.5 V - 5.0 0.094 at VGS = - 1.8 V - 4.2 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated

Contextual Info: Si7904BDN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.030 at VGS = 4.5 V 6 0.036 at VGS = 2.5 V 6 0.045 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Si7192DP

Abstract: Si7192DP-T1-GE3
Contextual Info: New Product Si7192DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0019 at VGS = 10 V 60 0.00225 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 43.5 nC S • VRM, POL, Server • High Current DC/DC - Low-Side 5.15 mm

Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available

Contextual Info: Si7214DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.04 at VGS = 10 V 6.4 0.047 at VGS = 4.5 V 5.9 APPLICATIONS PowerPAK 1212-8 • Synchronous Rectification S1 3.30 mm • Halogen-free According to IEC 61249-2-21

Contextual Info: Si7922DN Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.195 at VGS = 10 V 2.5 0.230 at VGS = 6 V 2.3 • Halogen-free Option Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®

S-80735

Abstract: Si3456CDV
Contextual Info: SPICE Device Model Si3456CDV Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

S-80748

Abstract: sup90n15 SUP90N15-18P
Contextual Info: SPICE Device Model SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

PowerPAK 1212-8

Abstract: 3860
Contextual Info: Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK 1212-8 Dual 0.152 3.860 0.152 (3.860) 0.039 0.039 (0.990) (0.990) 0.068 0.068 (1.725) (1.725) 0.010 (0.255) 0.016 (0.405) 0.016 (0.405) 0.094 (2.390) 0.094 (2.390) 0.010 (0.225)