14N03 Search Results

F219

Abstract: vu050 DIXYS
Contextual Info: DIXYS VUG 50 idAV = 58 A v rrm = 800-1800 V Three Phase Rectifier Bridge v RSM V r„ m V V TVPe -O AS 3 b 3 Li L + - o— 800 1200 1400 1600 1800 900 1300 1500 1700 1900 VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* . * delivery time on request

Contextual Info: □IXYS Three Phase Rectifier Bridges V ' rsm V RAM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VUO 50 IdAV = 58 A VRRM = 800-1 8 0 0 V i- Type Pt 1 VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* L-W - * delivery time on request

50-08N

Abstract: 50-12N03 50-08N03 50-16N 50-18N03 50-18N vuo 50-08N03
Contextual Info: 4bñb22b DODICI OQl « I X Y □IXYS VUO 50 IdAV = 58 A VRRM = 800-1800 V Three Phase Rectifier Bridges V RSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type fet F ti "it VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* I—► —

Contextual Info: VUO 60 Vpp. = 1200 -1800 v RRM Three Phase Rectifier Bridge v RSM VRRM V V 1300 1500 1700 1900 1200 1400 1600 1800 dAV = 72 A Type '“ l i t VUO 60-12N03 VUO 60-14N03 VUO 60-16N03 VUO 60-18N03* L-ii— ' delivery time on request Symbol Test Conditions 'd A V

30-16N03

Abstract: 30-18N03 30-08N03 3037a vuo 30
Contextual Info: n ix Y S VUO 30 IdAV Three Phase Rectifier Bridge v RSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 V RRM -O Type 37 A 800-1800 V + VUO 30-08N03 VUO 30-12N03 VUO 30-14N03 VUO 30-16N03 VUO 30-18N03* * delivery time on request Symbol Test Conditions

60-14N03

Abstract: VUO60 60-12N03 60-16N03 60-18N03
Contextual Info: DIXYS VUO 60 Three Phase Rectifier Bridge idAv —72 A VRRM = 1200-1800 V + v RSM V RRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Type VUO 60-12N03 VUO 60-14N03 VUO 60-16N03 VUO 60-18N03* * delivery time on request Symbol I IdAVM ® l2t Maximum Ratings

60-12N03

Abstract: 14N03 60-08N03 16N03 60-14N03 60-16N03 60-18N03 DIXYS 12n03 RSM 037
Contextual Info: □IXYS Three Phase Rectifier Bridge v RSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VUO 60 VRRM = 800 -1800 V IdAV ?' Type VUO 60-08N03 VUO 60-12N03 VUO 60-14N03 VUO 60-16N03 VUO 60-18N03* J • ' I = 58 A 1 L-ii— L-N—1 * delivery time on request

14N03LA

Abstract: 14n03 14N03L GD 364 IPB14N03LA IPI14N03LA IPP14N03LA
Contextual Info: 14N03LA 14N03LA, 14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 13.6 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM)

t14-n03

Abstract: 14n03 T14 N03 t14n03 369D NTD14N03R NTD14N03RG NTD14N03RT4 NTD14N03RT4G DSA0032463
Contextual Info: 14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK http://onsemi.com Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

14N03

Abstract: 14N03L
Contextual Info: 14N03LA, 14N03LA OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications 25 R DS on),max 13.9 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

14N03L

Abstract: IPD14N03L P-TO252 14N03
Contextual Info: 14N03L Preliminary data OptiMOS
=Buck converter series Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) 30 VDS RDS(on) ID V m
13.5 30 A P-TO252
Superior thermal resistance 175°C operating temperature

14N03LA

Abstract: 14N03L 14N03 PG-TO263-3-2 PG-TO-263-3-2 IPB14N03LA JESD22
Contextual Info: 14N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

t14n03

Abstract: 14n03 T14 N03 t14-n03 NTD14N03RT4 369D NTD14N03R
Contextual Info: 14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

t14n03

Abstract: t14-n03 T14 N03 14n03 351 MARKING D-PAK 351 D-PAK MARKING CODE 351 D-PAK
Contextual Info: 14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

14n03

Abstract: VU0110-16N07 vuo 82-12N07 vu0110 08N03 12N03 VU016- 16N03 190-16N07 16N07
Contextual Info: 3~ Rectifier Bridges, B6U Type ^IhJC PSM ► New A -C 45°C 10 ms A 50 130 4.5 46 0.75 120° sine 100 0.8 40 130 3.1 0.516 (120° sine) 300 0.8 15 130 2.5 0.42 (120° sine) 250 400 440 500 575 800 1400 1600 1800 250 400 440 500 575 800 1200 1400 1600 1800

14N03LA

Abstract: 14N03L smd diode 1139 IPB14N03LA 14N03 smd code diode 20a IPI14N03LA
Contextual Info: Rev. 1.1 14N03LA 14N03LA,14N03LA OptiMOSâ 2 Power-Transistor Product Summary Feature Ideal for high-frequency dc/dc converters  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Very low on-resistance RDS(on) P- TO262 -3-1

T14N03

Abstract: T14 N03 t14-n03 14n03 MOSFET n03
Contextual Info: 14N03R Power MOSFET 14 Amps, 25 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

70.4 L marking

Abstract: 14N03 351 D-PAK
Contextual Info: 14N03R Power MOSFET 14 Amps, 25 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

14n03la

Abstract: smd diode 1139 14N03L 14N03 Diode smd code 30a
Contextual Info: Preliminary data 14N03LA 14N03LA,14N03LA OptiMOSâ 2 Power-Transistor Product Summary Feature Ideal for high-frequency dc/dc converters  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Very low on-resistance RDS(on) P- TO262 -3-1

IPB14N03LA

Abstract: 14N03 14N03LA smd code D24 SMD CODE d20
Contextual Info: 14N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

14N03LA

Abstract: IPI14N03LA 14N03
Contextual Info: 14N03LA, 14N03LA OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications 25 R DS on),max 13.9 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

KK0G733011020

Abstract: DC-533 MOSFET B20 p03 G733 W83L950 l7912 GP57 diode DB3 C531 xa1720 UV111
Contextual Info: B 1 D 1 1 9 8 7 6 1 EMI H12 HOLEC256D106P2-V8 2 9 3 8 4 7 5 6 1 H13 HOLEC256D106P2-V8 2 9 3 8 4 7 5 6 1 9 8 7 6 H15 HOLEC256D106P2-V8 2 3 4 5 H23 SMD157X98 1 H20 HOLEC256D106P2 1 H8 HOLEC334D184P2 1 H14 HOLEC256D106P2-V8 2 3 4 5 1 1 1 H7 HOLEC334D184P2 1 H5

PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06