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    15 W RF POWER TRANSISTOR NPN Search Results

    15 W RF POWER TRANSISTOR NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    15 W RF POWER TRANSISTOR NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NESG260234

    Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		PDF NESG260234 NESG260234-AZ NESG260234-T1 NESG260234 LLQ2021 NESG260234-T1 NESG260234-T1-AZ

    1005 Ic Data

    Abstract: NESG260234 IC MARKING 1005 1005 TRANSISTOR
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		PDF NESG260234 NESG260234 NESG260234-AZ NESG260234-T1 NESG260234-T1-AZ PU10547EJ02V0DS LLQ2021 1005 Ic Data IC MARKING 1005 1005 TRANSISTOR

    nec 2501

    Abstract: 2501 NEC ic nec 2501 NESG260234
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification PO = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		PDF NESG260234 NESG260234 NESG260234-AZ NESG260234-T1 NESG260234-T1-AZ nec 2501 2501 NEC ic nec 2501

    NESG260234

    Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		PDF NESG260234 NESG260234-AZ NESG260234-T1 NESG260234 LLQ2021 NESG260234-T1 NESG260234-T1-AZ

    Untitled

    Abstract: No abstract text available
    Text: MS1263 RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS Features • • • • • • 512 MHz 12.5 VOLTS POUT = 15 W MINIMUM GP = 7.8 dB INPUT MATCHED COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1263 is a NPN silicon RF power transistor designed for


    Original     		PDF MS1263 MS1263 500mA

    Untitled

    Abstract: No abstract text available
    Text: MS1262 RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS Features • • • • • • 512 MHz 12.5 VOLTS POUT = 15 W MINIMUM GP = 7.8 dB INPUT MATCHED COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1262 is a NPN silicon RF power transistor designed for


    Original     		PDF MS1262 MS1262 500mA

    j 6815 transistor

    Abstract: 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original     		PDF 2SC5754 2SC5754-T2 j 6815 transistor 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS

    TRANSISTOR J 6815 EQUIVALENT

    Abstract: 2SC5754-T2 nec k 813 DCS1800 GSM1800 NE5520379A 2SC5434 2SC5509 2SC5753 2SC5754
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original     		PDF 2SC5754 2SC5754-T2 TRANSISTOR J 6815 EQUIVALENT 2SC5754-T2 nec k 813 DCS1800 GSM1800 NE5520379A 2SC5434 2SC5509 2SC5753 2SC5754

    transistor marking R57 ghz

    Abstract: No abstract text available
    Text: NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original     		PDF NE664M04 2SC5754 NE664M04-A 2SC5754-A NE664M04-T2-A 2SC5754-T2-A PU10008EJ01V0DS transistor marking R57 ghz

    TRANSISTOR 2sC2290

    Abstract: 2SC2290 1257 transistor
    Text: 2SC2290 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2290 is a class A silicon NPN planar transistor, designed for SSB communications PACKAGE STYLE .500 4L FLG FEATURES: .112x45° • PG = 15 dB min. at 60 W/28.000 MHz • High linear power output


    Original     		PDF 2SC2290 2SC2290 112x45° TRANSISTOR 2sC2290 1257 transistor

    transistor marking R57 ghz

    Abstract: TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original     		PDF 2SC5754 2SC5754-T2 PU10008EJ02V0DS transistor marking R57 ghz TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800

    NESG260234

    Abstract: NESG260234-T1-AZ nec npn rf NESG260234-T1
    Text: NEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER NESG260234 AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (1 W) AMPLIFICATION PO = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		PDF NESG260234 NESG260234-AZ NESG260234-T1 NESG260234-T1-AZ NESG260234 NESG260234-T1-AZ nec npn rf NESG260234-T1

    SD1407

    Abstract: 1257 transistor
    Text: SD1407 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1407 is a class AB common Emitter Transistor Designed for broadband amplifier operations up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° A • PG = 15 dB min. at 125 W/30 MHz • High linear power output


    Original     		PDF SD1407 SD1407 112x45° 1257 transistor

    HF15-28F

    Abstract: ASI10602
    Text: HF15-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI HF15-28F is Designed for FEATURES: B .112 x 45° A E • PG = 21 dB min. at 15 W/30 MHz • IMD3 = -30 dBc max. at 15 W PEP • Omnigold Metalization System C Ø.125 NOM.


    Original     		PDF HF15-28F HF15-28F 84NIMUM ASI10602 ASI10602

    BLX14

    Abstract: datasheet of ic 555
    Text: BLX14 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLX14 is Designed for HF and VHF band applications. PACKAGE STYLE .500 4L STUD A .112 x 45° FEATURES: A Ø .630 NOM C • PG = 13 dB min. at 15 W/1.6 MHz • d3 = -40 dB typ. at 15 W (PEP) • Omnigold Metalization System


    Original     		PDF BLX14 BLX14 datasheet of ic 555

    CD3922

    Abstract: No abstract text available
    Text: CD3922 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD3922 is a UHF Communication Power Transistor for Broadband Class A, AB or C Applications. MAXIMUM RATINGS I 15 A V 40 V PDISS 200 W @ TC = 25 OC TJ -65 OC to +200 OC T STG -65 OC to +200 OC PACKAGE STYLE JO-2


    Original     		PDF CD3922 CD3922

    2N5102

    Abstract: No abstract text available
    Text: 2N5102 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5102 is a High-power PACKAGE STYLE TO- 60 device for class-C, AM operation in VHF circuits. FEATURES INCLUDE: • POUT = 15 W min. @ 136 MHz. • Common Emitter Package MAXIMUM RATINGS IC 3.3 A


    Original     		PDF 2N5102 2N5102

    071J

    Abstract: No abstract text available
    Text: ZPioduoti, Una. J TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 FAX: (973) 378-8960 U.SA MRF233 (SILICON) The R.F Line 15 W - 90 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTORS NPN SILICON .designed for 12.5 Volt, mid-band large-signal amplifier applications in industrial and commercial FM equipment operating in the


    Original     		PDF MRF233 -90MHr, 071J

    UML15

    Abstract: ASI10693
    Text: UML15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UML15 is Designed for High Power Class C Amplifier, in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD A FEATURES: 45° C • Class C Operation • PG = 10 dB at 15 W/400 MHz


    Original     		PDF UML15 UML15 ASI10693 ASI10693

    J476

    Abstract: capacitor j476 NALCO
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF2628 The RF Line 15 W 136-220 M H i RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON Designed for 12.5 volt VHF large-signal power am plifiers in commercial and industrial FM equipment. • Compact .280 Stud Package


    OCR Scan     		PDF MRF2628 J476 capacitor j476 NALCO

    lc 945 p transistor

    Abstract: transistor LC 945 lc 945 transistor
    Text: ERICSSON ^ PTB 20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20095 is a class AB, NPN, com mon em itter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 w atts minimum output power, it may be used for


    OCR Scan     		PDF

    ferroxcube for ferrite beads 56-590-65

    Abstract: VK200-20-4B MRF628 ferroxcube ferrite beads npn 1349 1348 transistor VK20020-4B 56-590-65/3B transistor c 1349 56-590-65-3B
    Text: MRF628 silicon The RF Line 0.5 W - 470 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed fo r 5 .0 * 15 V o lt, V H F /U H F large-signal A m p lifie r/M u l­ tiplier applications in m ilitary and mobile FM equipment. •


    OCR Scan     		PDF MRF628 VK-200-20-4B ferroxcube for ferrite beads 56-590-65 VK200-20-4B MRF628 ferroxcube ferrite beads npn 1349 1348 transistor VK20020-4B 56-590-65/3B transistor c 1349 56-590-65-3B

    VK200 ferrite choke

    Abstract: MRF5176 choke vk200 vk200 transistor 3906 vitramon vk200 choke VK200 r.f choke
    Text: MRF5176 silicon The RF Line 15 W - 400 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for wideband large-signal driver and predriver am plifier stages in the 200 *6 00 M H z frequency range. • Specified 28 V o lt, 4 0 0 M H z Characteristics O utp ut Power = 1 5 Watts


    OCR Scan     		PDF MRF5176 VK200 ferrite choke MRF5176 choke vk200 vk200 transistor 3906 vitramon vk200 choke VK200 r.f choke

    MRF479

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 15 W PEP . 15 W (C W )— 3 0 M H z RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . d e s ig n e d p r im a r ily fo r u s e in s in g le s id e b a n d lin e a r a m p lifie r o u tp u t a p p lic a tio n s a n d o th e r c o m m u n ic a tio n s e q u ip m e n t o p e r ­


    OCR Scan     		PDF MRF479 MRF479