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    2SC5509 Search Results

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    2SC5509 Price and Stock

    California Eastern Laboratories (CEL) 2SC5509-A

    RF TRANS NPN 3.3V 15GHZ SOT343F
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    DigiKey 2SC5509-A
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    Rochester Electronics LLC 2SC5509-T2-A

    SMALL SIGNAL BIPOLAR TRANSISTOR
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    DigiKey 2SC5509-T2-A Bulk 833
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    California Eastern Laboratories (CEL) 2SC5509-T2-A

    RF TRANS NPN 3.3V 15GHZ SOT343
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    DigiKey 2SC5509-T2-A Cut Tape
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    2SC5509-T2-A Digi-Reel 1
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    2SC5509-T2-A Reel
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    Verical 2SC5509-T2-A 508 56
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    Arrow Electronics 2SC5509-T2-A Cut Strips 508 1
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    Renesas Electronics Corporation 2SC5509-T2-A

    2SC5509-T2-A
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    Verical 2SC5509-T2-A 85,500 962
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    2SC5509-T2-A 57,000 962
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    Rochester Electronics 2SC5509-T2-A 142,500 1
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    NEC Electronics Group 2SC5509-T2FB

    L BAND, SI, NPN, RF SMALL SIGNAL TRANSISTOR
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    Quest Components 2SC5509-T2FB 4,750
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    2SC5509 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5509 NEC NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER-LOW NOISE-HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN Original PDF
    2SC5509 NEC Semiconductor Selection Guide Original PDF
    2SC5509-A CEL Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF TRANSISTOR NPN SOT-343F Original PDF
    2SC5509FB NEC NPN Silicon RF Transistor for Medium Output Power Low Noise High-gain Amplification Flat-lead 4-pin Thin-type Super Minimold Original PDF
    2SC5509-T2 NEC NPN SILICON RF TRANSISTOR Original PDF
    2SC5509-T2-A CEL Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF TRANSISTOR NPN SOT-343F Original PDF

    2SC5509 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5509

    Abstract: 2SC5509-T2 2V330
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz


    Original     		PDF 2SC5509 2SC5509-T2 2SC5509 2SC5509-T2 2V330

    NEC 1357

    Abstract: 2SC5509 2SC5509-T2 C10535E 487 4PIN
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER ⋅ LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz


    Original     		PDF 2SC5509 2SC5509-T2 NEC 1357 2SC5509 2SC5509-T2 C10535E 487 4PIN

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet 2SC5509 NPN SILICON RF TRANSISTOR R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • • • • • <R> Ideal for medium output power amplification


    Original     		PDF 2SC5509 R09DS0056EJ0300 2SC5509-A 2SC5509-T2 2SC5509-T2-A

    Untitled

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Preliminary 2SC5509 / NE663M04 Data Sheet NPN SILICON RF TRANSISTOR R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04


    Original     		PDF 2SC5509 NE663M04 R09DS0056EJ0300 2SC5509 2SC5509-A 2SC5509-T2 2SC5509-T R09DS0056EJ0300

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    transistor marking T79 ghz

    Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority


    Original     		PDF PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book

    TRANSISTOR R57

    Abstract: 2SC5754-T2 transistor marking R57 ghz 2SC5434 2SC5509 2SC5753 2SC5754 DCS1800 GSM1800 NE5520379A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF PU10008EJ02V0DS 2SC5754 TRANSISTOR R57 2SC5754-T2 transistor marking R57 ghz 2SC5434 2SC5509 2SC5753 2SC5754 DCS1800 GSM1800 NE5520379A

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    2SC5509

    Abstract: 2SC5509-T2
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF 2SC5509 2SC5509-T2 PU10009JJ02V0DS Rn/50 M04mm L044-435-1588 2SC5509 2SC5509-T2

    transistor marking R57 ghz

    Abstract: TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original     		PDF 2SC5754 2SC5754-T2 PU10008EJ02V0DS transistor marking R57 ghz TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800

    2SC5743

    Abstract: 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC4091 2SC5937 2sc5747 2sc2570
    Text: 高周波半導体デバイス Microwave Semiconductor Devices W-CDMA用IC（ICs for W-CDMA） ・W-CDMA用にシリコン／GaAs MMICを開発中 ・小型ミニモールドやリードレスQFNなど実装面積の削減に有効なパッケージに搭載


    Original     		PDF PC8190/8191KRX-IF PC8194/8195KRX-IF PG2124TH 10TSSOP 10-pin FAX044435-9608 2SC5743 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC4091 2SC5937 2sc5747 2sc2570

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR NE663M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz • •


    Original     		PDF NE663M04 IS21EI2 OT-343 NE663M04

    uPD72002-11

    Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
    Text: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。


    Original     		PDF PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508

    417-116

    Abstract: 2SC5509 NE663M04 NE663M04-T2-A S21E
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 15 GHz • HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH IP3: NF = 27 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz


    Original     		PDF NE663M04 IS21EI2 OT-343 NE663M04 417-116 2SC5509 NE663M04-T2-A S21E

    ic isl 887

    Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03
    Text: RF & マイクロ波デバイス システムブロック www.renesas.com 2010.04 目 次 1. はじめに •··········································································································································· 3


    Original     		PDF PA86x PG2158T5K PC3218T5Y NES1823M-45, NES1823M-180, NES1823M-240, NES1823S-45, NES1823S-90 R09CA0001JJ0100 PX10020JJ42V0PF ic isl 887 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03