15.03 J1 Search Results

crouzet octal timer

Abstract: Crouzet Timer 814 Crouzet 88826103 crouzet TIMER WM1784-ND 87610150 crouzet repeat cycle timer Crouzet 814 timer 87610340 crouzet timer multifunction timer
Contextual Info: NEW! Analog Timer Controls Couzet’s Chronos series of timers are their newest timers with improved features such as greater accuracy, LED status indicator, 3 wire sensor control option and a heavy duty 10A relay. Perfect for all delay-on/off functions as well as Interval timing, repetitive cycle timing and remote triggered sequence timing. All timers are cUL and CE approved.

marking codes fairchild

Abstract: NM27C256N J28AQ FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES J24AQ J28CQ N40A V44A VA32A J40BQ
Contextual Info: Non-Volatile Memory - EPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines J24AQ . 4

691102710002

Abstract: 4 pin optocoupler 12v INFINEON application note
Contextual Info: AN- EVAL- 3 RBR06 65 JZ BDTIC 30W 12V SMPS e va l uat ion boar d wit h I CE3RB R0665J Z Appl icat ion Not e AN - EVAL- 3RB R0665JZ V1. 0 , 2014- 07- 22 Po wer Manag em ent & Mult im ar k et www.BDTIC.com/infineon BDTIC Edition 2014-07-22 Published by Infineon Technologies AG,

lm 3254

Abstract: ICA1009 11293
Contextual Info: u u lÌ ICA1009 2.0 to 11.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ ♦ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +5V BROADBAND PERFORMANCE ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED SELECTABLE BIAS OPTIONS IC A 1009 Chip Outline

Contextual Info: ICA1009 m 2.0 to 11.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ ♦ m I•' j□# h I 1 I IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +5V BROADBAND PERFORMANCE ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED SELECTABLE BIAS OPTIONS

LBT35007

Contextual Info: 350MHz SAW Filter 11MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: LBT35007 www.sipatsaw.com Features — For RF SAW filter — Single-ended operation — Ceramic Surface Mount Package — Small size

Contextual Info: Mini-Circuits - Specification for Power Splitter - ZAPD-ED10572/1 Power Splitter Notes: • For Surface Mount Environmental Specifications, please click here. Re-flow soldering information is available in "Surface Mount" article. • case style outline drawing: 99-01-916

Contextual Info: EGN26C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.3dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain : 17dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

93c46ln

Abstract: 93s46 eprom marking codes fairchild 24U02 93S46 eeprom FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES F46L 24C02 code example assembly 93S46 24C02LN
Contextual Info: Non-Volatile Memory - EEPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines M08A .

PS0SXDS60

Abstract: IEC 352-2 6J4 CORCOM corcom 6J4 PS0S0SS60 1060-090 PE0S0SS30 corcom 6vj1
Contextual Info: 855-2012:QuarkCatalogTempNew 8/27/12 8:57 AM Page 855 8 Power Entry Modules RoHS 6 Amps; 100-240 Volts AC, 50-60 Hz Mounting Diagram Recommended Panel Cutout Note: Specify line cord GA400 below to mate with IEC connector. 6VJ1/6J4 6VJ1 6VJ1 INTERCONNECT

A4436

Abstract: transistor a684
Contextual Info: H Avantek Products Surface Mount Cascadable Amplifier 2 to 18 GHz Technical Data PPA-18222 Features Description Pin Configuration • Small Surface Mount Package: 0.25 in. x 0.25 in. PP-25 • GaAs MMIC Technology The PPA-18222 is an extremely wideband two stage MMIC

HDR2X3, header

Abstract: HDR1X2 CC3216-1206 CC2012 CC3216 polarized capacitor HDR2X3 smt-induct capacitor 100nf 50v 0805 CC3225-1210
Contextual Info: ੺໏๑ᆩኸళ āāሞཌ၍ഗJP4ࢅJP2ฉ๼෇૬༹ᅼೕ႑ࡽă‫ݴ‬՚ॽᇸ āāॽI2C႑ࡽ݀ิഗࢅথ੨‫ۉ‬ୟӱ૶থ዁ऺ໙ऐ‫ڦ‬ժႜ ႑ࡽࢅথ‫܋ں‬ᆌᆩ዁"IN1"ᆅগࢅ"GND"ᆅগă ‫܋‬੨ă āāሞJP5ฉ‫ڦ‬ᆅগኮक़૶থᅃ߲޶ሜDŽĽ8ˮDžLjሞ

transistor RFP25N05

Abstract: AN7254 AN7260 AN9321 AN9322 RFP25N05
Contextual Info: RFP25N05 S E M I C O N D U C T O R 25A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET MegaFET April 1995 Features Packaging • 25A, 50V JEDEC TO-220AB • rDS(ON) = 0.047Ω SOURCE DRAIN GATE • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve

10UF

Abstract: CGH35015 CGH35015F CGH35015-TB molex 5238
Contextual Info: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,

10 awg twh

Abstract: diagram 3 phase heater LCD TV backlight power inverter 650C LC050 RS170
Contextual Info: White Electronic Designs Display Systems Division 199-0009-00 AMLCD PRODUCT - MODEL LC050 Ruggedized 5.0" Display Head Assembly 320 x 234 OVERVIEW White Electronic Designs’ 5.0” sunlight readable display head assembly with backlight is ruggedized for harsh

STR W 5753 a

Abstract: str w 5753 str 5753 CGH27015-TB 10UF 470PF CGH27015 CGH27015F 44019
Contextual Info: CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX

2312 footprint dimension

Contextual Info: AG603-89G InGaP HBT Gain Block Applications • • • • Mobile Infrastructure CATV / FTTX W-LAN / ISM WCDMA / LTE 3G 60 AG SOT-89 Package Product Features • • • • • • • Functional Block Diagram DC – 3000 MHz +19.5 dBm P1dB at 900 MHz +33 dBm OIP3 at 900 MHz

Contextual Info: AG603-89G InGaP HBT Gain Block Applications • • • • Mobile Infrastructure CATV / FTTX W-LAN / ISM WCDMA / LTE 3G 60 AG SOT-89 Package Product Features • • • • • • • Functional Block Diagram DC – 3000 MHz +19.5 dBm P1dB at 900 MHz +33 dBm OIP3 at 900 MHz

Contextual Info: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high

CGHV1J006D

Abstract: transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor
Contextual Info: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high

CC2012-0805

Abstract: CC3216-1206 CC3225-1210 cc4532-1812 HDR1X2 100uF polarized capacitor polarized capacitor HDR2X3, header CC3225 AN-1187
Contextual Info: National Semiconductor Application Note 1488 Kevin Hoskins May 2006 Quick Start Guide Connect a load ≥ 8Ω between the pins on JP5 and another load between the pins on JP3. Apply power. Make measurements. Plug in a pair of headphones. Enjoy. 2 Connect the I C signal generation and interface board to a

CGH40035FE

Abstract: STR 17006 str g 5551 cree 3535 10UF 470PF CGH4003 CGH40035 CGH40035F str 765 RT
Contextual Info: PRELIMINARY CGH40035 35 W, RF Power GaN HEMT Cree’s CGH40035 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and

Contextual Info: TQP3M9037 Ultra Low Noise, High Linearity LNA Applications • • • • • Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems 8 pin 2x2 mm DFN Package Product Features • • • • • • • • •

STR W 5753 a

Abstract: CGH40010 str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F
Contextual Info: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer