44019 Search Results

Contextual Info: Linear Response Probes Series 700 Temperature Probes use the 44018 thermistor composite as the temperature sensor. On special order, probes can also be built with 44019 thermistor composite. The purpose of the Series 700 Series 700 Probes is to provide a complete probe

Contextual Info: 181-44019 Home Events Careers How To Buy Contact Search Products Cable Ties Cable Ties with Fasteners Cable Tie Tools Clamps and Clips Industries Resources News About Us 181-44019 Slotted Wall Wiring Duct, 4" X 4", Non-Adhesive, Black, 30ft/Box Order Samples

Contextual Info: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > Removable Memory Products > Product Feature Selector > Product Details 440190-1 Product Details

GEC Plessey Semiconductors cross reference

Abstract: BMA31751 MA17501 MA17502 MA17503 MA31751 MAS281 AD00 TI MIL-STD-1750A E04A
Contextual Info: MAS281 MAS281 MIL-STD-1750A Microprocessor Replaces June 1999 version, DS3563-4.0 The MAS281 Microprocessor is a MIL-STD-1750A Notice 1 , 16-bit Central Processing Unit (CPU). It consists of three CMOS/SOS large-scale integration (LSI) chips: the MA17501

0805CS-221XKBC

Abstract: RF2310 RF2310PCBA
Contextual Info: M ICRO-DEVICES W IDEBAND G ENERAL P U R P O S E A M PLIFIER T y p ic a l A p p lic a tio n s • General Purpose High Bandwidth Gain Blocks Broadband Test Equipment Final PA for Medium Power Applications • IF or RF Buffer Amplifiers Driver Stage for Power Amplifiers

Contextual Info: Catalog 1307515 Issued 9-99 CompactFlash Connectors Right Angle Flush Mount Header Right Angle Product Facts •Rugged low profile design ■Meets CompactFlash A sso­ ciation specifications ■1.27 [.050] centerline ■10,000 cycle durability min. ■Surface mount with locator

thyristor 800A

Abstract: AN4506 TF944
Contextual Info: TF944.H TF944.H Fast Switching Thyristor Replaces March 1998 version, DS4281-3.2 DS4281-4.0 January 2000 APPLICATIONS KEY PARAMETERS VDRM 3500V IT RMS 1350A ITSM 13000A dV/dt 500V/µs dI/dt 500A/µs tq 120µs • High Power Inverters And Choppers ■ UPS

TTC-B01

Abstract: TTC-B-01 TTC 104 T5.5A ttc 103 MA28139 ttc 103 datasheet FTC 960 GEC Plessey Semiconductors cross reference RTU DATA SHEET
Contextual Info: MA28139 MA28139 OBDH Bus Terminal Replaces June 1999 version, DS3592-5.0 DS3592-6.0 January 2000 The OBT ASIC will interface any user to the ESA On Board Data Handling bus. Developed under ESA Contract, it conforms to ESA OBDH, Digital Bus Interface and Internal

ultrasonic generator 40khz

Abstract: GATE ASSISTED TURN-OFF THYRISTORS ultrasonic generator 1200 w 40khz 40KHZ ULTRASONIC asymmetric thyristor asymmetric thyristor datasheet DF451 TA329 RC snubber diode TA32910Q
Contextual Info: TA329.Q TA329.Q Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4680-2.1 DS4680-3.0 January 2000 KEY PARAMETERS VDRM 1400V IT RMS 370A ITSM 2000A dVdt 1000V/µs dI/dt 1000A/µs tq 7.0µs APPLICATIONS • High Frequency Applications

RECTIFIER DIODE 1000A 2500V

Abstract: single phase half bridge controlled rectifier scr BUSBAR calculation datasheet 3 phase bridge fully controlled rectifier BUSBAR calculation INTERNATIONAL RECTIFIER scr MP02 jhs 60 multimeter PG 017
Contextual Info: MP02 XXX 190 Series MP02 XXX 190 Series Phase Control Dual SCR, SCR/Diode Modules Replaces December 1998 version, DS4479-3.0 DS4479-4.0 January 2000 FEATURES KEY PARAMETERS VDRM ITSM IT AV (per arm) Visol • Dual Device Module ■ Electrically Isolated Package

ACR300SG33

Abstract: ACR30 ACR300 AN4839 2000V to 3000V diodes
Contextual Info: ACR300SG33 ACR300SG33 Fast Turn-on Asymmetric Thyristor Replaces April 2000 version, DS5081-2.2 DS5081-2.4 August 2000 APPLICATIONS • Capacitor Discharge ■ Pulse Power Applications FEATURES ■ The ACR300SG33 is a high voltage asymmetric thyristor which has exceptionally fast turn-on

AN4839

Abstract: RC5327230 Honeywell v3
Contextual Info: GDU 90 20722 GDU 90-20722 Gate Drive Unit Replaces March 1998 version, DS4568-3.1 DS4568-4.0 January 2000 This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit. KEY PARAMETERS APPLICATIONS IFGM IG ON

TGS 2600 series

Abstract: 300a 1500v thyristor 300a 1000v thyristor TGS 2600 AN4506 AN4839 DG306AE25
Contextual Info: DG306AE25 DG306AE25 Gate Turn-off Thyristor Replaces March 1998 version, DS4089 - 3.2 DS4099-4.0 January 2000 APPLICATIONS KEY PARAMETERS 600A ITCM VDRM 2500V 225A IT AV dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC)

AN4839

Contextual Info: GDU 90-20721 GDU 90-20721 Gate Drive Unit Replaces March 1998 version, DS4567-3.1 DS4567-4.0 January 2000 This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit. APPLICATIONS KEY PARAMETERS IFGM IG ON

tv nei schematics

Abstract: ARM dual port SRAM compiler HP memory card reader diagram PHILIps monochrome monitor schematic L7205 K6488L-FF block diagram of a usb modem with memory card reader PLC projects EPOC-32 cd 152m
Contextual Info: L7205 Product Brief Internet System ProcessorDSP Enhanced Architecture Target Market The L7205 is targeted at the emerging Internet/Information appliance markets. This "system-on-silicon" device delivers high performance, low power, highly integrated, low cost system solutions.

PME 400

Abstract: RIFA pme 27 rifa pme 271 PME 500 S capacitor rifa pme 271m RIFA PME 40/085/56 PME 500 rifa x2 PME
Contextual Info: INTERFERENCE SUPPRESSORS PME 271 Metallized Paper PME 271 High d ll/d t capability Excellent self-healing properties. Ensures long life even when subject to frequent overvoltages Good resistance to ionisation due to impregnated dielectric Small dimensions

MA31750

Abstract: MA31751 MIL-STD-1750 4D00 mil-std-1750a MA31750 application note
Contextual Info: MA31751 MA31751 Memory Management & Block Protection Unit Replaces June 1999 version, DS4083-2.0 The MA31751 Memory Management Unit/Block Protect Unit MMU/BPU is an optional chip which may be used to expand the capabilities of the MA31750. User configurable, the MA31751 can perform as an MMU,

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

str w 6554 a

Abstract: STR 6554 a
Contextual Info: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

Contextual Info: PRELIMINARY CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Cree’s CGHV40030 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band

Contextual Info: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide

Contextual Info: CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a

cgh40120F

Abstract: CAP 0805 ATC 600F 154-04 CGH4012 CGH40120F-TB 095.91 cgh401 CGH40120
Contextual Info: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

Contextual Info: Catalog 1307767 Issued •1-99 CompactFlash Connectors Right Angle Flush Mount Header Right Angle Product Facts ■ Rugged low profile design ■ Meets CompactFlash Asso­ ciation specifications ■ 1.27 {.050] centerline ■ 10,000 cycle durability min. I