150DEGREES Search Results

BC337A

Contextual Info: BC337A NPN Medium Power Transistor • This device is designed for general purpose amplifier application at collector currents to 800mA. • Sourced from process 38. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: BCW66G BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted

pn4117a

Contextual Info: PN4117A PN4117A N-Channel Switch • This device is designed for low current DC and audio application. These devices provide excellent performance as input stages for subpicoamp instrumentation or any high impedance signal sources. • Sourced from process 53.

Contextual Info: MPS8598 PNP General Purpose Amplifier • • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: KSA928A Audio Power Amplifier • • • Complement to KSC2328A Collector Power Dissipation : PC=1W 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO

MPS8598

Contextual Info: MPS8598 PNP General Purpose Amplifier • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. • Sourced from Process 68. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted

BC184

Abstract: 150deg transistor BC184 BC184* transistor
Contextual Info: BC184 Silicon NPN Small Signal Transistor • BVCEO = 30V Min. • hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units VCEO Symbol Collector-Emitter Voltage

D44H11TU

Abstract: fairchild 748 QS 100 NPN Transistor 100MHZ KSE45H 748 transistor on 1244H
Contextual Info: D44H11TU NPN Epitaxial Silicon Transistor • Low Collector-Emitter Saturation Voltage : VCE sat = 1V (Max.) @ 8A • Fast Switching Speeds • Complement to KSE45H TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25°C unless otherwise noted

BCW66G

Contextual Info: BCW66G BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted

BC184LC

Contextual Info: BC184LC BC184LC Silicon NPN Small Signal Transistor Note 1 • BVCEO = 30V (Min.) • hFE = 250 (Min.) @VCE = 5.0V, IC = 2mA TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

MPS6513

Contextual Info: MPS6513 NPN General Purpose Amplifier • This device is designed as a general purpose amplifier and switch. • The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. • Sourced from Proces 23. TO-92 1 1. Emitter 2. Base 3. Collector

BC184C

Contextual Info: BC184C BC184C Silicon NPN Small Signal Transistor Note 1 • BVCEO = 30V (Min.) • hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

BC184LC

Contextual Info: BC184LC BC184LC Silicon NPN Small Signal Transistor Note 1 • BVCEO = 30V (Min.) • hFE = 250 (Min.) @VCE = 5.0V, IC = 2mA TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

FZT790A

Contextual Info: FZT790A FZT790A PNP Low Saturation Transistor 4 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * TC=25°C unless otherwise noted

FA7764P

Abstract: FA7764 fuji capacitor 220uF 10V FA7764n FA7764AN fa7738 3.1v ZENER DIODE SD833-06 PWM converter DC-DC 24v 5v DIP-8 FA7738N
Contextual Info: FA7764 FUJI Power Supply Control IC DC/DC Power Supply control IC FA7764 Application Note June-2010 Fuji Electric Systems Co.,Ltd Fuji Electric Systems Co., Ltd. AN-059E Rev.1.0 June.2010 1 http://www.fujielectric.co.jp/fdt/scd/ FA7764 WARNING 1. This Data Book contains the product specifications, characteristics, data, materials, and structures as

BCW66G

Contextual Info: BCW66G BCW66G NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 19. 2 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings * TC=25°C unless otherwise noted

transistor BC 458

Abstract: BC184l transistor code 458 055 transistor bc184l BC 458 transistor 184L bc184L npn transistor bc icbo nA npn 3184L BC184* transistor
Contextual Info: BC184L BC184L Silicon NPN Small Signal Transistor Note 1 • BVCEO = 30V (Min.) • hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

PN4117A

Contextual Info: PN4117A PN4117A N-Channel Switch • This device is designed for low current DC and audio application. These devices provide excellent performance as input stages for subpicoamp instrumentation or any high impedance signal sources. • Sourced from process 53.

Contextual Info: FZT790A FZT790A PNP Low Saturation Transistor 4 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * TC=25°C unless otherwise noted

Contextual Info: KSA928A Audio Power Amplifier • Complement to KSC2328A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units VCBO Symbol Collector-Base Voltage

equivalent of transistor bc212

Abstract: BC212 bc212 datasheet DATASHEET Transistor BC212
Contextual Info: BC212 PNP General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 300mA. • Sourced from process 68. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: SPDT Non-Reflective Switch ITTC02AB FEATURES • • • • • • • SOIC-8 package Non-Reflective Usable to 5 GHz High Isolation 42 dB @ 1GHz Positive Control when “floated” with capacitors Pin-for-pin compatible with standard “C02” matched switches

PN4117A

Contextual Info: J*>z.ml- 2onctu.ctoi ^Products, One. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. PN4117A N-Channel Switch • This device is designed for low current DC and audio application. These devices provide excellent performance as input stages for subpicoamp instrumentation or any high impedance signal sources.

D45C8

Contextual Info: D45C8 D45C8 PNP Current Driver Transistor • This device is designed for power amplifier, regulator and switching circuits speed is important. • Sourced from process 5P. TO-220 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * TA=25°C unless otherwise noted