150NM Search Results

honeywell memory sram

Abstract: hx6408 HXS6408
Contextual Info: HXS6408 HXS6408 512k x 8 STATIC RAM The monolithic 512k x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low voltage systems operating

Contextual Info: HXSR06432 2M x 32 STATIC RAM The Multi-Chip Module MCM , 2M x 32 Radiation Hardened Static RAM is a high performance 2,097,152 word x 32-bit static random access memory MCM. The SRAM MCM consists of four 512k x 32 SRAM die fabricated with Honeywell’s 150nm silicon-on-insulator CMOS (S150) technology.

HX6408

Contextual Info: HRT6408 512K x 8 STATIC RAM The monolithic 512k x 8 Radiation Tolerant Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low

HLXSR01632

Contextual Info: HLXSR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low

Contextual Info: HLXSR01608 2M x 8 STATIC RAM The monolithic 2M x 8 Radiation Hardened Static RAM is a high performance 2,097,152 word x 8-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low

HLXSR01608

Contextual Info: HLXSR01608 HLXSR01608 2M x 8 STATIC RAM 1.5V Core VDD The HLXSR01608 radiation hardened 16Mbit Static proprietary design, layout and process hardening Random Access Memory SRAM is a monolithic techniques. There is no internal EDAC implemented. SRAM fabricated with Honeywell’s 150nm silicon-oninsulator CMOS (S150) technology. The 2M x 8 bit

Contextual Info: HXSR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low

Contextual Info: PPH15X_10 TECHNOLOGY The new UMS 150nm GaAs power pHEMT process UMS is now pleased to extend its foundry offer with the introduction of a new 150nm GaAs Power pHEMT process. This process is optimised for wideband high power amplification up to 40GHz with a typical Ft of 65GHz

HX6408

Contextual Info: HXS6408 HXS6408 512k x 8 STATIC RAM The monolithic 512k x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low voltage systems operating

HXSR01608

Contextual Info: HXSR01608 2M x 8 STATIC RAM The monolithic 2M x 8 Radiation Hardened Static RAM is a high performance 2,097,152 word x 8-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low

1000PPM

Contextual Info: SPECIFICATION FOR COTCO LED LAMP MODEL No : DOC. No : LC374TWN1-35G-A 04 18Nov04 Description: 35 Degree 3mm Round LED Lamp in White Color with Water Transparent Lens and Stopper Dice Material: InGaN Confirmed by Customer: Date: ATTENTION OBSERVE PRECAUTIONS

1000PPM

Contextual Info: COTCO LUMINANT DEVICE HUIZHOU LTD. SPECIFICATION FOR COTCO LED LAMP Document No: Model No : Rev. No: Date: SPE/LC503TWN1-50H-A1 LC503TWN1-50H-A1 02 2005-05-19 Description: 50 Degree 5mm Round LED Lamp in White Color with Water Transparent Lens and No Stopper

LS1-PWH1-01

Contextual Info: SPECIFICATION FOR I-WITTY LED LAMP MODEL No : DOC. No : LS1-PWH1-01 E 08Apr04 Description: 120 Degree 4.0x 4.0mm Side SMD in Daylight Color with Water Transparent Dice Material: InGaN Confirmed By Customer: Date: ATTENTION OBSERVE PRECAUTIONS ELECTROSTATIC

1000PPM

Abstract: LD-300DWN1-70 4044v LD300
Contextual Info: COTCO LUMINANT DEVICE HUIZHOU LTD. SPECIFICATION FOR COTCO LED LAMP Document No : Model No: Rev. No : Date: SPE/LD-300DWN1-70 LD-300DWN1-70 01 2005-10-6 Description: 3 x 3mm, QFN Type, High Power White LED For Illumination, Clear Compound Encapsulated. Dice Material:

1000PPM

Contextual Info: COTCO LUMINANT DEVICE HUIZHOU LTD. SPECIFICATION FOR COTCO LED LAMP Document No : Model No: Rev. No : Date: SPE/LD-700DWN6-70 LD-700DWN6-70 01 2005-09-16 Description: 7 x 7mm, QFN Type, High Power White LED For Illumination, Clear Compound Encapsulated.

AXUV576C

Contextual Info: ELECTRON DETECTION 576 mm2 AXUV576C FEATURES • • • • Square active area Round 4 pin package Ideal for electron detection 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R

SXUV20HS1

Contextual Info: PHOTODIODE Ø5 mm SXUV20HS1 FEATURES • • • • • Circular active area Ideal for EUV detection 100% internal QE High speed Grid lines 5 microns, Pitch 100 microns • RoHS and REACH compliant RoHS Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

AXUVHS5

Contextual Info: PHOTODIODE 1 mm2 AXUVHS5 FEATURES • • • • SMA connector Ideal for electron detection 100% internal QE Ultra high speed Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R TEST CONDITIONS

AXUV20HS1

Contextual Info: PHOTODIODE Ø5 mm AXUV20HS1 FEATURES • • • • • Circular active area Ideal for electron detection 100% internal QE High speed Grid lines 5 microns, Pitch 100 microns • RoHS and REACH compliant RoHS Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

AXUV63HS1-CH

Contextual Info: PHOTODIODE 63 mm2 AXUV63HS1-CH FEATURES • • • • • Circular active area Ideal for electron detection 100% internal QE High speed Hole in center of detector Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS

optek a400

Contextual Info: 4-Pin White LED Lamp 7.6mm OVFSW6C8 x x x x x Packaged in tubes Compatible with automatic placement equipment Compatible with infrared and vapor phase reflow solder process Mono-color type Pb-free Product Photo Here The OVFSW6C8 is designed with higher forward voltage to maximize brightness and incorporates a low-profile

LP6-EWN1-03-N3

Contextual Info: COTCO LUMINANT DEVICE HUIZHOU LTD. SPECIFICATION FOR COTCO LED LAMP Document No: Model No : Rev. No : Date: SPE/LP6-EWN1-03-N3 LP6-EWN1-03-N3 02 2007-05-08 Description: 120 Degree 6.0 x 5.0mm SMT-LED in White Color with Water Transparent Dice Material: InGaN

Contextual Info: SPECIFICATION FOR I-WITTY LED LAMP MODEL No : DOC. No : LC503PWH1-15Q-01-MT A 05Mar04 Description: 15 Degree 5mm Round LED Lamp in Daylight Color with Water Transparent Lens and No Stopper *This specification is only for Marktech Dice Material: InGaN Confirmed

Contextual Info: SPECIFICATION FOR I-WITTY LED LAMP MODEL No : DOC. No : LM1-PWH1-11-MT 01 11Nov04 Description: 120 Degree 3.2 x 2.8mm Power SMD in Daylight Color with Water Transparent *This specification is only for MT* Dice Material: InGaN Confirmed by Customer: Date: ATTENTION