150UC Search Results

30N60BD

Contextual Info: nixYS Advanced Technical Information HiPerFAST IGBT with Diode IXGH 30N60BD1 IXGT 30N60BD1 ^fi typ Symbol Test Conditions VCEs Tj = 25°Cto 150UC 600 V v CGB T,J = 25cC to 150°C ;R Cat =1 MU 600 V v G ES Continuous +20 V VG EM Transient ±30 V ^C25 Tc =25°C

004U

Contextual Info: Tem ic Silieonix _ SÌ4431DY P-Channel Enhancement-Mode MOSFET Product Summary V Ds V r DS(on) ( ß ) I d (A ) 0.040 @ V GS = - 10 V ± 5 .8 0.070 (gì V Gs = - 4 . 5 V ± 4 .5 -3 0 in S O -8 s □ : ~8~1 D s □ : XI D s □ :

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

LS4148

Abstract: Si9160 TSSOP-16
Contextual Info: T em ic SÌ9160 S e m i c o n d u c t o r s Controller for RF Power Amplifier Boost Converter Features • High Frequency Switching up to 2 M Hz • Optimized Output D rive Current (350 mA) • Standby M ode • W ide Bandwidth Feedback Amplifier • Single-Cell Lilon and Three-cell NiCd or NiM H Operation

Contextual Info: RHRG3070CC, RHRG3080CC, RHRG3090CC, RHRG30100CC H A R R IS / Semiconductor April 1995 File Number 3942.1 30A, 700V - 1000V Hyperfast Dual Diodes Features RHRG3070CC, RHRG3080CC, RHRG3090CC, and RHRG30100CC TA49064 are hyperfast dual diodes with soft recovery characteristics (tp p < 65ns). They have half

Contextual Info: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr Da ta S h e e t No. 2 N 3 7 6 2 1 1 I I ^88888 % # 1 $ idL SEMICONDUCTORS G eneric Part Num ber: 2N3762 Type 2N3762 G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV

Contextual Info: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. ititn nnnn hhhhhhk-. ><>niftBHhr 1 1 I I ^88888 % # 1 D a ta S h e e t No. 2 N 3 7 6 3 $ idL SEMICONDUCTORS G eneric Part Num ber: 2N3763 Type 2N3763 G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV

Contextual Info: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. ititn nnnn hhhhhhk-. ><>niftBHhr 1 1 I I ^88888 % # 1 D at a S h e e t No. 2 N 3 7 6 3 L $ idL SEMICONDUCTORS G eneric Part Num ber: 2N3763L Type 2N3763L G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV

Contextual Info: ^s.m.i-Condimto'i 'Lpioaucti, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N4261 Polarity PNP Features: • • Fast switching small signal silicon transistor. Housed in a TO-72 case.

2N5877

Abstract: 2N5878
Contextual Info: TYPES 2N5877, 2N5878 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS TYPES 2N5877, 2 N 5878 BULLETIN NO. DL-S 7111624, DECEMBER FOR PO W ER -A M PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S D E SIG N ED FOR C O M P L E M E N T A R Y USE W ITH 2N 5875, 2N 58 76

HiNil

Abstract: TSC306 diagram ta 306 cc306
Contextual Info: TSC306/307 LHBJ5 580 Pleasant S*.reet _ . . . . . . * Quad 2 ,2 , 3, 3 -ln p u t Active P ullup m q U3Cj 2 , 2, 3, 3 -ln p u t (Open C ollector) w a to rto w n .M A 0 2 172 • (61/)924 92 Features General D e scrip tio n Versatile Configuration T he H iN IL 3 0 6 and 3 0 / each contain tw o 2 -irp u t N O R g a t«

2N2905

Abstract: PN2905
Contextual Info: K+}:'*<>> , r . < - . • ; . > V " A • ' ' * • : - v s v . - . : < .''a " ; ^ ^ j. v : *>'%'•.• * \ V ; •-., * '\*.^''*v • ^ ¿ k \ !>v^ ’ jr* 2N/PN2905 . . '- s j V ' » « ^ / s V ^ s i S i - ^ v V - - ; - ' l i A - ^ A s V ’ -'V. V .r '

TB23P06V

Abstract: TB23P 81 210 w 25 is which transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB23P06V TMOS V Power Field Effect Transistor D2PAK for Surface Mount Motorola Pr»f«rr*d Dovtce TMOS POWER FET 23 AMPERES 60 VOLTS ROS on = 0.120 OHM P-Channel Enhancement-Mode Silicon Gate

Contextual Info: SIEMENS S I PM OS Power MOS Transistors BUZ 72 L BUZ 72 AL VDS = 100 V /D = 1 0 /9 .0 A ^DS on ~ 0 .2 /0 .2 5 Q • • • • • N channel Enhancem ent m ode Logic level A valanche-proof Package: TO -220 A B 1) TVpe Ordering code BUZ 7 2 L C 6 70 78-S 1 32 7-A 2

Contextual Info: SÌ4812DY Vishay Siliconix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M OSFET PR OD UC T SU M M AR Y V o»M 30 Id {A) R d s (Om) (& l O.Otfi @ Vqq = 10 V ±9 .0 0.028 @ VGs ~ 4-5 V ±7 .3 p \0 s & SCHO TTKY PRODUCT SUMM ARY Voson V«o (V) DIODE FORWARD VOLTAGE

Contextual Info: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. ititn nnnn hhhhhhk-. ><>niftBHhr 1 1 I I ^88888 % # 1 D at a S h e e t No. 2 N 3 7 6 2 L $ idL SEMICONDUCTORS G eneric Part Number: 2N3762L Type 2N3762L G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV

Contextual Info: ¿888888888 |pM iwiHBBffi sm sssBPe .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr D a t a S h e e t No. 2 N 5 0 0 3 o % #f 1 l $ I Ic ^88888 id L S E M IC O N D U C T O R S G eneric Part Num ber: 2N5003 Type 2N5003 Geom etry 9702 Polarity PNP Qual Level: JA N - JA N T X V

Contextual Info: CALIFORNIA MICRO DEVICES PDN 002 ►► ►►► 17 CHANNEL ESD PROTECTION ARRAY Features Applications • • • • 17 channel live ESD protectio n up to 13KV EMI/RFI noise filte r fo r high frequencies • Live ESD protectio n fo r prin ter p o rt up to 13KV

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R- BROWN a DAC7528 1 DAC7528 i I FEATURES DESCRIPTION • DOUBLE BUFFERED DATA LATCHES T h e D A C 7528 c o ntains tw o, 8-bit m ultiplying digitalto-analog converters (D A C s). Separate o n-chip latches

galvo

Abstract: E12017 EL2017
Contextual Info: EL20171EL2017C é t a n t e c HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS High Efficiency Precision Servo Controller General Description Features • Low Saturation Voltage • Precision Current Sense Amplifier • Efficient Class D Switch • linear Class B Hack

TS15

Abstract: TS1583 TS1583CM5
Contextual Info: $ TS1583 T A IW A N S E M IC O N D U C T O R 1,5A Dual Input Low Dropout Voltage Regulator pb RoHS CO M PLIANCE TO-263-5L (D 2PAK) Pin Definition; 1. S en se 2. A d j/G n d 3. O utpu t 4. V C ontrol ¿ il 5. V Power IM M 1 5 General Description The T S 1583 fa m ily is a positive adjustable and fixed voltage regulator developed to provide 1.5A w ith H igher

LM339Q

Abstract: IC LM339N LM139F power base lm339n LM339N LM139D/LM239 LIM339 lm339n pin diagram LM139 LM139D
Contextual Info: L M 1 3 9 /L M 2 3 9 /L M 3 3 9 MS Voltage Comparators L M 1 3 9 /L M 2 3 9 /L IM 3 3 9 quad comparators general description The L M 1 3 9 series consists o f fo u r independent voltage com parators w h ich were designed s p e cifi­ ca lly to operate fro m a single pow er su pp ly over a

ADSP1081

Abstract: ADSP-1081A ADSP-1081 ADSP-1081AJD ADSP 1081 ADSP-1080 MPY08 adsp1080 D40A ADSP1081AJN
Contextual Info: ANALOG DEVICES □ 8 x 8-Bit Unsigned-Magnitude CMOS Multiplier ADSP-1081A FEATURES 8 x 8-Bit Parallel Multiplication 30MHz Multiplication Rata 275mW Powar Dissipation with TTL-Compatible C M O S Technology Unsigned-Magnitude Data Format Available in Hermetically-Sealed 40-Pin DIP or

Contextual Info: EL4094C EL4094C Jmmtm ÆL*4Ê 9 •^kW ' W. • Features General Description • Complete video fader • 0.02%/0.04° differential gain/phase @100% gain • Output amplifier included The EL4094C is a complete two-input fader. It combines two inputs according to the equation: