2N3762 Search Results

Contextual Info: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr Da ta S h e e t No. 2 N 3 7 6 2 1 1 I I ^88888 % # 1 $ idL SEMICONDUCTORS G eneric Part Num ber: 2N3762 Type 2N3762 G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 378-2982 (212) 227-8008 FAX: (973) 3784080 2N3762 (SILICON) Medium-current PNP silicon annular transistor, designed for high-speed switching and driver applications. MAXIMUM RATINGS |TA • 7»«C urltwoihnww nai

Contextual Info: 2N3762 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

2N3762

Contextual Info: SEM ICONDUCTOR TECHNICAL DATA 2N3762JAN, JT X , 2 N 3 7 6 3 JA N ,JT X , 2N3764JAN, JT X , 2N3765JAN, JT X , JT X V JT X V JTX V , JA N S JT X V CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkor.Koma N.Y. 11779 Processed per MIL-S-19500 396 PNP Silicon Sm all-Signal Transisto rs

Contextual Info: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. ititn nnnn hhhhhhk-. ><>niftBHhr 1 1 I I ^88888 % # 1 D at a S h e e t No. 2 N 3 7 6 2 L $ idL SEMICONDUCTORS G eneric Part Number: 2N3762L Type 2N3762L G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV

2N3762

Contextual Info: 2N3762 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N3762+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: SEMICONDUCTOR • ■ m h h h b m h b h h h m m » —« — TECHNICAL DATA 2N3762 2N3763 2N3764 2N3765 CRYSTAIONCS 2805 Veterans Highway o N P , ? c iC O n , T - , Small-Signal Transistors Roilkonkoma, N.Y. ,1770 designed lor general-purpose switching applications

2n3762

Contextual Info: Data Sheet No. 2N3762 Generic Part Number: 2N3762 Type 2N3762 Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/396 Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-39 case. Also available in chip form using

2N3762

Contextual Info: TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 396 Devices 2N3762 2N3762L Qualified Level 2N3763 2N3763L 2N3764 JAN JANTX JANTXV 2N3765 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

2N5161

Abstract: KT814a B0136 35N15 NS02 KT814B B0826
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 MH0811 MH0812 MH0813 2SA1220 2SA766 2SA1220A 2N3762A 2N3762A ~~~~g~A 30 2SA738 PE8550 JE9112A 2SA683 2SA751 JE9112B JE8550B JE8550B - j~~~~g 25 35 -40 JE8550C JE85500 JE85500 JE91120 2N3660 PE8551 NB321K

2N3762

Abstract: TO206AB 2N3763S
Contextual Info: TECHNICAL DATA 2N3762, 2N3762L JAN, JTX, JTXV 2N3763, 2N3763L JAN, JTX, JTXV 2N3764 JAN, JTX, JTXV 2N3765 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/396 PNP SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N3762, L 2N3764 2N3763, L

2N3762

Contextual Info: M A X IM U M RATINGS Symbol Value C o llector-E m itter Voltage VCEO -4 0 Vdc C ollector-Base Voltage VCBO -4 0 Vdc Em itter-Base Voltage vebo - 5 .0 Vdc 'c - 1 .5 Ade Rating C ollector C urrent — Continuous Unit TO-39 2N3762 Total Device D issipation n T a = 2 5 X

Contextual Info: 2N3762+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3762 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

2n3762

Abstract: 2N3765 2N3763 2N3762L 2N3763L 2N3764
Contextual Info: TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices 2N3762 2N3762L Qualified Level 2N3763 2N3763L 2N3764 JAN JANTX JANTXV 2N3765 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

2N3467

Abstract: 2n3762 chip type geometry 2N37
Contextual Info: Data Sheet No. 2C3762 Generic Packaged Parts: Chip Type 2C3762 Geometry 6706 Polarity PNP 2N3467, 2N3467L, 2N3468, 2N3468L, 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3764, 2N3765 30 MILS B E 30 MILS Chip type 2C3762 by Semicoa Semiconductors provides performance

2N3762L

Contextual Info: Data Sheet No. 2N3762L Generic Part Number: 2N3762L Type 2N3762L Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/396 Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-5 case.

2N3762

Abstract: 2N3763 MOTOROLA
Contextual Info: MOTOROLA SC XSTRS/R 12E D I b 3b7a5M 00ab3t,7 fl | T - 3 7 -/ r M A X IM U M R A T IN G S Sym bol 2N3762 2N3764 2N3763 2N3765 Coliector-E m itter V olta g e V C EO 40 60 Vdc Collector-B ase V oltag e V cB O 40 60 Vdc Em itter-Base V oltag e vebo 5.0 Vdc ic

2N3762

Contextual Info: 2N3762 Chip: 5.0V; 1.5A; Geometry 6706; Polarity PNP 8.39 Transistors. 1 of 2 Home Part Number: 2N3762 Online Store 2N3762 Diodes C hip: 5 .0 V; 1 .5 A; G eo m et ry 6 7 0 6 ; Po larit y PNP Transistors

2N3762

Abstract: 2N3763
Contextual Info: DATA SHEET 2N3762 2N3763 PNP SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3762 and 2N3763 types are Silicon PNP Epitaxial Planar Transistors designed for core driver applications. MAXIMUM RATINGS TA=25°C Collector-Base Voltage

Contextual Info: 2N3762+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MJ10009

Abstract: 1N4937 2N3762 MTP3055E
Contextual Info: ON Semiconductort MJ10009 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high–voltage,