1519B Search Results

1519B

Abstract: P3C1041
Contextual Info: P3C1041 HIGH SPEED 256K x 16 4 MEG STATIC CMOS RAM FEATURES Easy Memory Expansion Using CE and OE Inputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down when deselected Packages —44-Pin SOJ, TSOP II High Speed (Equal Access and Cycle Times)

1519b

Contextual Info: FTS512K8/FTS512K8L HIGH SPEED 512K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —36-Pin SOJ 400 mil —36-Pin FLATPACK —36-Pin LCC (452 mil x 920 mil) High Speed (Equal Access and Cycle Times)

Contextual Info: P3C1256 HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM FEATURES 3.3V Power Supply Common Data I/O High Speed Equal Access and Cycle Times — 12/15/20/25 ns (Commercial) — 15/20/25 ns (Industrial) Three-State Outputs Low Power Advanced CMOS Technology Single 3.3 Volts ±0.3Volts Power Supply

Contextual Info: P4C165 ULTRA HIGH SPEED 8K x 8 RESETTABLE STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Output Enable and Dual Chip Enable Control Functions High Speed Equal Access and Cycle Times – 15/20/25 ns (Commercial) – 20/25/35 (Industrial) Single 5V±10% Power Supply

Contextual Info: P3C1256 HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM FEATURES 3.3V Power Supply Common Data I/O High Speed Equal Access and Cycle Times — 12/15/20/25 ns (Commercial) — 15/20/25 ns (Industrial) Three-State Outputs Low Power Advanced CMOS Technology Single 3.3 Volts ±0.3Volts Power Supply

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)

Contextual Info: P4C164 REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM115 P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B Jun-06 JDB Added 28-pin ceramic DIP C Aug-06 JDB Added Lead Free Designation

Contextual Info: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK

Contextual Info: 19-4750; Rev 1; 7/11 DS34S132 32-Port TDM-over-Packet IC General Description The IETF PWE3 SAToP/CESoPSN/HDLC-compliant DS34S132 provides the interworking functions that are required for translating TDM data streams into and out of TDM-over-Packet TDMoP data streams

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)

Contextual Info: P3C1021 HIGH SPEED 64K x 16 1 MEG STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down when deselected Packages —44-Pin SOJ, TSOP II High Speed (Equal Access and Cycle Times) — 10/12/15/20 ns (Commercial)

Contextual Info: PYX28C64 8K x 8 EEPROM FEATURES Access Times of 200, 250, 300 and 350 ns Software Data Protection Single 5V±10% Power Supply Fully TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: 10,000 or 100,000 Cycles Low Power CMOS: - 60 mA Active Current

P3C1256

Abstract: 1519B
Contextual Info: P3C1256 HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM FEATURES 3.3V Power Supply Common Data I/O High Speed Equal Access and Cycle Times — 12/15/20/25 ns (Commercial) — 15/20/25 ns (Industrial) Three-State Outputs Low Power Advanced CMOS Technology Single 3.3 Volts ±0.3Volts Power Supply

PYX28C64

Abstract: eeprom 1519B P5C164 EEPROM101
Contextual Info: PYX28C64 8K x 8 EEPROM FEATURES Access Times of 200, 250, 300 and 350 ns Software Data Protection Single 5V±10% Power Supply Fully TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: 10,000 or 100,000 Cycles Low Power CMOS: - 60 mA Active Current

MAC7100RM

Abstract: transistor B595 btm 110 bluetooth eim 630 466 BLUETOOTH MODULE BTM B605 transistor equivalent bluetooth btm 330 Btm 220 bluetooth L38Y ovc Bluetooth
Contextual Info: MAC7100 Microcontroller Family Reference Manual Devices Supported: MAC7101 MAC7111 MAC7116 MAC7122 MAC7131 MAC7141 MAC7106 MAC7112 MAC7121 MAC7126 MAC7136 MAC7142 MAC7100RM Rev. 2 02/2009 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support

1519B

Abstract: P3C1256
Contextual Info: P3C1256 P3C1256 HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —28-Pin 300 mil DIP and SOJ 3.3V Power Supply High Speed Equal Access and Cycle Times

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

Contextual Info: P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Single 5V±10% Power Supply High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45 ns (Military)

Contextual Info: P4C1049/P4C1049L HIGH SPEED 512K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —36-Pin SOJ 400 mil —36-Pin FLATPACK —36-Pin LCC (452 mil x 920 mil) High Speed (Equal Access and Cycle Times)

1519B

Abstract: P4C164 P4C164L
Contextual Info: P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Single 5V±10% Power Supply High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45 ns (Military)

Contextual Info: P3C1256 HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM FEATURES 3.3V Power Supply Common Data I/O High Speed Equal Access and Cycle Times — 12/15/20/25 ns (Commercial) — 15/20/25 ns (Industrial) Three-State Outputs Low Power Advanced CMOS Technology Single 3.3 Volts ±0.3Volts Power Supply

Contextual Info: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK —28-Pin LCC 350 mil x 550 mil

1519B

Abstract: 1519C P4C164 P4C164L
Contextual Info: P4C164/164L P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Output Enable and Dual Chip Enable Control Functions High Speed Equal Access and Cycle Times – 8/10/12/15/20/25 ns (Commercial) – 10/12/15/20/25/35 (Industrial)

Contextual Info: FT61256 L HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK