152-BALL MICRON Search Results

MT29F1G08ABCHC

Abstract: mt29c MT29F4G16A mt29f1g08 MT29F1G08ABCHC-ET MT29C1G12 MT29F2G16ABDHC MT29F4G16AB MT29F1G16ABCHC-ET micron lpddr
Contextual Info: Preliminary‡ 152-Ball NAND Flash and Mobile LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 152-Ball Package-on-Package (PoP) Combination Memory (TI OMAP ) MT29C Family Current production part numbers: See Table 1 on page 3 Features Figure 1:

MT29C1G12

Abstract: mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1
Contextual Info: Preliminary‡ 152-Ball NAND Flash and LP-DRAM PoP TI OMAP MCP Features NAND Flash and LP-DRAM 152-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package

D9KG

Abstract: marking code micron label marking aa5 152-Ball M2P20 MT46H64M32L2CG-6 152-Ball PoP SMD marking code B10 AA5 mark diagram smd marking code M21
Contextual Info: Preliminary‡ 152-Ball x32 LPDDR-SDRAM PoP TI-OMAP Features LPDDR-SDRAM 152-Ball Package-on-a-Package (PoP) TI-OMAP MT46HxxxMxxLxCG Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)

MT46H64M32

Abstract: MT46H128 MT46H64M32L2CG-6 MT46H128M 152-Ball lpddr MT46H128M32 micron lpddr 128M32 MT46H128M32L4KZ
Contextual Info: 152-Ball x32 Mobile LPDDR only PoP (TI-OMAP) Features Mobile LPDDR (only) 152-Ball Package-on-Package (PoP) TI-OMAP MT46HxxxMxxLxCG MT46HxxxMxxLxKZ Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)

Contextual Info: MS46H64M32L2SB-XX *PRELIMINARY 2Gb LPDDR 2 x 32Mx32 FEATURES  Package: GENERAL DESCRIPTION • 152 Plastic Ball Grid Array (PBGA), 14 x 14 mm Microsemi MS46H64M32L2SB package-on-package (PoP) MCP product combines two Mobile LPDRAM devices in a single MCP.

MT41J512M8

Abstract: "2Gb DDR3 SDRAM" MT41J256M8 MT41J1G4 srt 8n 2Gb DDR3 SDRAM twindie MT41J512 DDR3-1066 DDR3-1333 MT41J512M4
Contextual Info: 4Gb: x4, x8 TwinDie DDR3 SDRAM Functionality TwinDieTM DDR3 SDRAM MT41J1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT41J512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks For component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options The 4Gb TwinDie DDR3 SDRAM uses Micron’s 2Gb

2267.1

Abstract: 74385 68595 7686 drv 8807 MO-151 MXED102 MXED202 MXED203 R159
Contextual Info: Preliminary MXED203 160-Channel OLED Row Driver FEATURES: OVERVIEW: • Clare Micronix’s MXED203 is a row-multiplexed display driver for OLED panel displays. The MXED203 directly supports up to 160-row OLED panel displays, or can be cascaded for controlling

63-ball

Abstract: TN-00-08
Contextual Info: 2Gb: x4, x8 TwinDie DDR2 SDRAM Functionality TwinDie DDR2 SDRAM MT47H512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks MT47H256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks For the latest component data sheet, refer to Micron’s Web site: www.micron.com Functionality Options

SPC564A80

Abstract: njd287 SPC564A80L7 spc563 D65050 e200z448n3 SPC563M64 SPC564A74 philips half bridge ballast LBGA208
Contextual Info: SPC564A80B4, SPC564A80L7 32-bit MCU family built on the embedded Power Architecture Features • ■ 150 MHz e200z4 Power Architecture core – Variable length instruction encoding VLE – Superscalar architecture with 2 execution units – Up to 2 integer or floating point instructions

MT41K512M8

Abstract: sac305 A1A4M DDR3L MT41K256M8 MT41K1G4
Contextual Info: Preliminary‡ 4Gb: x4, x8 1.35V TwinDie DDR3L SDRAM Features TwinDie DDR3L SDRAM MT41K1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT41K512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks Features Options • Configuration – 64 Meg x 4 x 8 banks x 2 ranks – 32 Meg x 8 x 8 banks x 2 ranks

ATF-21100

Abstract: 6SS4 ATF-21100-GP1 AT-8111
Contextual Info: HEWLETT-PACKARD/ CMPNTS blE D HEW LETT PACKARD • 4 4 4 7 5 A 4 D D D T T I E T4fl H H P A ATF-21100 AT-8111 0.5-6 GHz Low Noise Gallium Arsenide FET Features • • • Chip Outline Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical

ATF-21100

Abstract: AT-8111 Avantek amplifier 8 12 GHz ATF-21100-GP1 AVANTEK transistor Avantek UA-152
Contextual Info: AVANTEK Q EOE D INC avan tek • llHllfab □ □ □ h S b G ATF-21100 AT-8111 0.5-6 GHz Low Noise Gallium Arsenide FET Features Avantek Chip Outline • • _483 p m _ • 7 Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical

Contextual Info: p October 1996 Edition 2.0 Z DATASHEET CE61 SERIES 0.35 MICRON HIGH PERFORMANCE/LOW POWER CMOS EMBEDDED ARRA YS CE61 SERIES PRODUCT SUMMARY DESCRIPTION The Fujitsu CE61 is a series of high performance CMOS embedded arrays featuring full support of diffused high-speed

StatPro-150

Abstract: 29EE020 29EE512 a15 1334 28SF040 29EE010 228A10 STATPRO150
Contextual Info: Die Sales Specifications INTRODUCTION TO UNENCAPSULATED DIE This document provides the user with guidelines for processing, testing, and resolving applications issues associated with purchasing unencapsulated SST flash EEPROM die. Product electrical specifications, functional descriptions, and bonding diagrams are not included. This information is available in the appropriate

U2140

Abstract: U2141 ARM720T CL-PS6700 CS53L32 EP7212 EP7309 MO-151 u2114 u2202
Contextual Info: EP7309 Data Sheet FEATURES High-Performance, Low-Power System on Chip Enhanced Digital Audio Interface • ARM720T Processor — ARM7TDMI CPU — 8 KB of four-way set-associative cache — MMU with 64-entry TLB — Thumb code support enabled ■ Ultra low power

i7238

Abstract: u2164 u2117 u2147 IR LED and photodiode FLASHER SEQUENTIAL LED U2146 ARM720T u2137 EP7212
Contextual Info: EP7309 Data Sheet FEATURES High-Performance, Low-Power System on Chip Enhanced Digital Audio Interface • ARM720T Processor — ARM7TDMI CPU — 8 KB of four-way set-associative cache — MMU with 64-entry TLB — Thumb code support enabled ■ Ultra low power

MICRON BGA PART MARKING

Abstract: MT44K64M18 MT44K32M36 RTT120 micron power 120w MT44K
Contextual Info: 1Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRCmin = 10ns RL3-1600 – 1.25ns and tRCmin = 12ns (RL3-1600)

MTfc8g

Abstract: MTFC32GJTED regulator 2gb smd MTFC4GMTEAWT MTFC4GMTEA-WT MTFC16
Contextual Info: Micron Confidential and Proprietary 2GB, 4GB, 8GB, 16GB, 32GB, 64GB: e•MMC Features e·MMC Memory MTFC2GMTEA-WT, MTFC4GMTEA-WT, MTFC8GLTEA-WT, MTFC16GLTAM-WT, MTFC16GLTDV-WT, MTFC16GJTEC-WT, MTFC32GLTDM-WT, MTFC32GLTDI-WT, MTFC32GJTED-WT, MTFC64GJTEF-WT

ATF21100-GP3

Abstract: TF2110 ATF-21100-GP1
Contextual Info: Thal HEWLETT WlHM PA C K A R D ATF-21100 AT-8111 0.5-6 GHz Low Noise Gallium Arsenide FET Features Chip Outline • • _ 4»3 • Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical at 4 GHz High Output Power: 23.0 dBm typical Pi dB

ATF-21100

Abstract: ATF-21100-GP1 ATF-21100-GP3 ATF21100 ATF21100-GP3 RF FET TRANSISTOR 3 GHZ atf21100 model AT-8111
Contextual Info: HEWLETT-PACKARD/ CMPNTS m blE D • H EW LETT PA C K A R D 44475Ö4 □ □□cm 2 ATF-21100 AT-8111 0.5-6 GHz Low NoiS6 Gallium Arsenide FET Features • • • T4Û ■ HPA Chip Outline Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical

EP7212

Abstract: U2146 ssi 202 ARM720T CS53L32 EP7312 TBD 234 V12 U2201 U244 Blinker
Contextual Info: EP7312 Data Sheet FEATURES High-Performance, Low-Power System on Chip with SDRAM and Enhanced Digital Audio Interface • ARM720T Processor — ARM7TDMI CPU — 8 KB of four-way set-associative cache — MMU with 64-entry TLB — Thumb code support enabled

U2.8

Abstract: MICRON mcp ARM720T EDB7312 EP7211 EP7311 U283 63D18 U29-6 13005 m8
Contextual Info: EP7311 Data Sheet FEATURES High-Performance, Low-Power System on Chip with SDRAM and Enhanced Digital Audio Interface • ARM720T Processor — ARM7TDMI CPU — 8 KB of four-way set-associative cache — MMU with 64-entry TLB — Thumb code support enabled

MT44K32M36

Contextual Info: 1Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRC MIN = 10ns (RL3-1600) – 1.25ns and tRC (MIN) = 12ns

CMPA2060025D

Contextual Info: CMPA2060025D 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium