152OC Search Results

ITF86182SK8T

Abstract: MS-012AA TB370
Contextual Info: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V

AN9321

Abstract: HUFA75831SK8 HUFA75831SK8T MS-012AA TB370
Contextual Info: HUFA75831SK8 Data Sheet November 2000 File Number 4967 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER

rs808

Abstract: HUF76112SK8T AN7254 AN7260 AN9321 AN9322 HUF76112SK8 MS-012AA TB334
Contextual Info: HUF76112SK8 Data Sheet December 2001 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET The HUF76112SK8 is an Application-Specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low

g7n60b3d

Abstract: igbt g7n60b3d G7N60B3 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 2MH22 150OC
Contextual Info: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

AN9321

Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
Contextual Info: ISL9N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features

Contextual Info: HUF75831SK8 Data Sheet August 2000 File Number 4796.2 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER

Contextual Info: HUF76132SK8 Data Sheet September 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 32S bt .5A 0V, 115 m, an, gic vel raF wer OST) utho • Logic Level Gate Drive • 11.5A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER∏

UT28F256

Abstract: UT28F256-FP UT28F256LV RH00VK 39BASE-0101 PPI-1004 UTRH00SC 39BASE Aeroflex UTMC UT28F64/LV Datasheet
Contextual Info: Standard Products UT28F64/LV and UT28F256/LV PROMs Programming User Guide Legacy Products July 2001 PROM PROGRAMMING FLOW FOR UT28F64, UT28F256, UT28F64LV and UT28F256LV PROM for Legacy Products The UT28F64 and UT28F256 are 5-volt parts. The UT28F64LV and UT28F256LV are 5-volt parts that have been characterized for

Contextual Info: RURD4120S9A_F085 March 2009 Data Sheet 4A, 1200V Ultrafast Diodes Features The RURD4120S9A_F085 are ultrafast diodes with soft recovery characteristics trr < 70ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.

RHRD660

Abstract: rhr660 rhr650 RHRD650 RHRD640S RHRD660S RHRD660S9A RHR640 RHRD640 RHRD650S
Contextual Info: S E M I C O N D U C T O R RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S 6A, 400V - 600V Hyperfast Diodes April 1995 Features • • • • • Package Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . . . . . . . . <30ns Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

rs808

Abstract: 725P AN7254 AN9321 AN9322 HUF76112SK8 HUF76112SK8T MS-012AA TB334 pspice model gate driver
Contextual Info: HUF76112SK8 Data Sheet April 2000 File Number 4834.1 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET [ /Title HUF7 6112S K8 /Subject (7.5A, 30V, 0.026 Ohm, NChannel, Logic Level Power MOSFET) /Autho r () /Keywords (7.5A, 30V, 0.026 Ohm, NChannel,

ACE-Q101

Contextual Info: RURD4120S9A_F085 Data Sheet March 2009 4A, 1200V Ultrafast Diodes Features The RURD4120S9A_F085 are ultrafast diodes with soft recovery characteristics trr < 70ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.

UR4120

Abstract: TA49036 RURD4120 RURD4120S RURD4120S9A
Contextual Info: RURD4120, RURD4120S Data Sheet Title UR 120, RD 20S bt A, 00V rafa odes utho eyrds A, 00V rafa wer pes, wer File Number 3641.3 4A, 1200V Ultrafast Diodes Features The RURD4120 and RURD4120S are ultrafast diodes with soft recovery characteristics trr < 70ns). They have low

Contextual Info: LM26420 www.ti.com SNVS579F – FEBRUARY 2009 – REVISED MARCH 2013 LM26420/LM26420Q Dual 2.0A, High Frequency Synchronous Step-Down DC-DC Regulator Check for Samples: LM26420 FEATURES DESCRIPTION • • • • The LM26420 regulator is a monolithic, high

AN7254

Abstract: AN9321 AN9322 HUF75531SK8 HUF75531SK8T MS-012AA TB370
Contextual Info: HUF75531SK8 TM Data Sheet April 2000 File Number 4848 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER

HX8340B

Abstract: HX8340-B mx 362-0
Contextual Info: DATA SHEET DOC No. HX8340-B(N -DS ) HX8340-B(N) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2007 HX8340-B(N) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver

Contextual Info: HUFA75531SK8 TM Data Sheet November 2000 File Number 4953 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER

152oC

Abstract: 900E1 212e7
Contextual Info: HUFA75831SK8 TM Data Sheet November 2000 File Number 4967 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER

ITF86172SK8T

Abstract: MS-012AA TB370
Contextual Info: ITF86172SK8T Data Sheet 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET January 2000 File Number 4809.1 Features • Ultra Low On-Resistance [ /Title - rDS ON = 0.016Ω, VGS = −10V Packaging (HUF7 - rDS(ON) = 0.023Ω, VGS = −4.5V SO8 (JEDEC MS-012AA)

g7n60

Abstract: G7N60B3
Contextual Info: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

Contextual Info: Product Folder Sample & Buy Technical Documents Support & Community Tools & Software LM26420, LM26420-Q0, LM26420-Q1 SNVS579G – FEBRUARY 2009 – REVISED JULY 2014 LM26420/LM26420-Q0/Q1 Dual 2-A, High Frequency Synchronous Buck Regulator 1 Features 3 Description

AN7254

Abstract: AN7260 ITF86130SK8T MS-012AA TB370
Contextual Info: ITF86130SK8T Data Sheet 14A, 30V, 0.0078 Ohm, N-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH Features • Ultra Low On-Resistance - rDS(ON) = 0.0078Ω, VGS = 10V - rDS(ON) = 0.010Ω, VGS = 4.5V - rDS(ON) = 0.012Ω, VGS = 4.0V

mosfet 4953

Abstract: 4953 mosfet m 4953 mw 4953 AN9321 HUFA75531SK8 HUFA75531SK8T MS-012AA TB370 151E9
Contextual Info: HUFA75531SK8 Data Sheet November 2000 File Number 4953 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER

AN7254

Abstract: AN7260 ITF86130SK8T MS-012AA TB370
Contextual Info: ITF86130SK8T Data Sheet 14A, 30V, 0.0078 Ohm, N-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4798.5 Features • Ultra Low On-Resistance - rDS(ON) = 0.0078Ω, VGS = 10V - rDS(ON) = 0.010Ω, VGS = 4.5V - rDS(ON) = 0.012Ω, VGS = 4.0V