155MA Search Results

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB2016T100M Features Item Summary 10 H(±20%), 155mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 0806/2016

KM64BV4002J-12

Abstract: KM64BV4002J-15 KM64BV4002J-20
Contextual Info: Advanced Information BiCMOS SRAM KM64BV4002 1,048,576 WORD x 4 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES • Fast Access Time : 12 ,1 5 , 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM 64B V4002J-12: 155mA(Max.)

INDUCTOR 100J

Abstract: schema 100 led ASTM BS class b
Contextual Info: 2 . Schem atic: 1. Mechanical Dimensions: B 2 .0 ÌD .2 O - oD 1,4±0.1 3. Electrical Specifications: OCL: 10uH ±5% @2.52MHz 1.0V 1.5 a Q: 25 Min @2.52MHz 1.0V SRF: 33MHz Min _L DCR: 3.50 Ohm s Max Rated Current: 155mAdc Max in 7 A 2 .5 ± 0 .2 Suggested Pad Layout

Contextual Info: PART NUMBER: 155MABA04KG# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 1.5 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C

Contextual Info: PART NUMBER: 155MABA03KH# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 1.5 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C

Contextual Info: Data Sheet HL6378DG AIGaInP Laser Diode 642nm/90mW Features: Outline • Visible light output: 642nm Typ.  Optical output power: 80mW CW  Single transverse mode  Low operating current: 155mA Typ.  Low operating voltage: 2.7V Max.  Operating temperature: +50°C

Contextual Info: PRELIMINARY KM64B258 BiCMOS SRAM BiCMOS 6 4 K X 4 Bit Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Time —Commercial: 10, 12, 15ns —S & 6ns Output Enable Time • Low Power pissipation —Standby: 20mA —Operating: 175mA, 155mA, 130mA

CDSH3-16-G

Abstract: CDSH3-56-G CDSH3-70-G CDSH3-99-G SMD Diode
Contextual Info: COMCHIP Small Signal Switching Diodes S M D D IO D E S P E C IA L IS T CDSH3-99-G/ 70-G/ 56-G/ 16-G Reverse Voltage: 85 Volts Forward Continue Current:155mA RoHS Device Features Designed for mounting on small surface. High speed switching. High mounting capability, strong surge

Contextual Info: Data Sheet HL6366DG/67DG AIGaInP Laser Diode 642nm/90mW Features: Outline • Visible light output: 642nm Typ.  Optical output power: 80mW CW  Single transverse mode  Low operating current: 155mA Typ.  Low operating voltage: 2.7V Max.  Operating temperature: +50°C

Contextual Info: PART NUMBER: 155MABA05KJ# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 1.5 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB2016T100M Features Item Summary 10 H(±20%), 155mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 0806/2016

Contextual Info: 3757 W. Touhy Ave., Lincolnwood, IL 60712 847 675-1760 • (847) 673-2850 · www.illcap.com +85°C Motor Run Capacitors radial leaded box Part Number: 155MABA01KH# This part is RoHS compliant Electrical Specifications Capacitance: 1.5uF Tolerance: -10 %,+10 %

Contextual Info: PART NUMBER: 155MABA03KG# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 1.5 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C

0050II

Abstract: 1301
Contextual Info: 2 . Sch em atic: 1. D im ensions: 0.110 Max 3. E lectrical Specs: 0.020 OCL: 10.OuH ±10% @2.52MHz, 1.0V 0.087 Max DC Res.: 3.5 Ohms Max IDC: 155mA Max Q: 25 Min O 2.52MHz SRF: 28MHz Min 0.020 |— 0.050—I 1 0.040 0.100 XFMRS Inc UNLESS OTHERWISE SPECIFIED

Contextual Info: PART NUMBER: 155MABA01KH# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 1.5 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C

Contextual Info: PART NUMBER: 155MABA02KH# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 1.5 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors for Signal Lines LB series M type / LE series M type LEM2520T100J Features Item Summary 10 H(±5%), 155mA, 1008 Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table

SF2010A-AS

Abstract: SF2020 SF2100
Contextual Info: SF2000A-AS Series Single Phase 250VAC Common mode:Wide band/High attenuation Dood for High frequency Application For EMC Anechoic/Shielded Chamber Specifications Part No. Rated Current Leakage Current Dimmension [mm] A B C D E F G H J K L SF2010A-AS 10A 155mA

Contextual Info: KM681002B, KM681002BI CMOS SRAM 28K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns Max. • Low Power Dissipation Standby (TO.) : 50mA(Max.) (CM O S) : 10mA(Max.) Operating K M 681 002B -8 :160mA(Max.) KM681002B - 1 0 : 155mA(Max.)

Contextual Info: PRELIMINARY KM69B257 BiCMOS SRAM 32 K X 9 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Timas —Commercial: 10ns, 12ns, 15ns, 20ns —5ns & 6ns Output Enable times • Low Power Dissipation —Standby: 20mA —Operating: 195mA, 175mA, 155mA, 130mA

Contextual Info: Advanced Information BiCMOS SRAM KM64BV4002 1,048,576 WORD X 4 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM64BV4002J-12: 155mA(Max.)

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB2016T100K Features Item Summary 10 H(±10%), 155mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 0806/2016

Contextual Info: MR16R0824 6/8/C/G AN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 128M RDRAM(B-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 128M RDRAM (A-die) SPD Specification 1.02 version.

K7A401800B-QC

Abstract: K7A401809B K7A401809B-QC K7A403200B-QC K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC
Contextual Info: K7A403609B K7A403209B K7A401809B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters