570MA Search Results

30nH

Contextual Info: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series AQ1053N0S-T Features Item Summary 3.0nH(-0.3nH to +0.3nH), 570mA, 8, 0402 Lifecycle Stage Mass Production Standard packaging quantity (minimum)

Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR series NR4018T470M Features Item Summary 47 H(±20%), 570mA, 420mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3500pcs Products characteristics table External Dimensions -/4018

Contextual Info: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features RFPA3026  P1dB =33.6dBm at 5V  802.11g 54Mb/s Class AB Performance RF IN  POUT =26dBm at 2.5% EVM, VCC 5V, 570mA  POUT =27dBm at 2.5% EVM,

Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR series H type NRH3012T150MN Features Item Summary 15 H(±20%), 530mA, 570mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR series H type NRH2410T6R8MN Features Item Summary 6.8 H(±20%), 750mA, 570mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2500pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC3225T330KR Features Item Summary 33 H(±10%), 500mA, 570mA, 1210 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors for Signal Lines LB series M type / LE series M type LBM2016TR15J Features Item Summary 0.15 H(±5%), 570mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC3225T330KR Features Item Summary 33 H(±10%), 500mA, 570mA, 1210 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series AQ1053N0S-T Features Item Summary 3.0nH(-0.3nH to +0.3nH), 570mA, 8, 0402 Lifecycle Stage Mass Production Standard packaging quantity (minimum)

TS16949

Abstract: ZLLS410 ZLLS410TA
Contextual Info: ZLLS410 10V Low leakage Schottky diode in SOD323 Summary VR > 10V; IF = 570mA; IR typ. 2µA Description This compact SOD323 packaged 10 volt Schottky diode offers users an excellent performance combination, comprising high current operation, extremely low leakage and low forward voltage ensuring suitability for

XTR1N0850

Abstract: XTR1N0800 XTR1N0815-BD
Contextual Info: XTRM Series XTR1N0800 IE W HIGH-TEMPERATURE, 80V DIODE FAMILY DESCRIPTION ▲ Reverse voltage VR > 90V. ▲ Operational beyond the -60°C to +230°C temperature range. ▲ Forward current @ 230°C, VF=1.2V: o XTR1N0815: IF=165mA per diode. o XTR1N0850: IF=570mA per diode.

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC3225T330MR Features Item Summary 33 H(±20%), 500mA, 570mA, 1210 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions

LQH43C

Contextual Info: Inductors Coils > Chip Inductor (Chip Coil) > Power Inductor (Wire Wound Type for Choke) Data Sheet Chip Inductor (Chip Coil) 1 Power Inductor (Wire Wound Type for Choke) LQH43C Series (1812 Size) • Dimensions ■ Packaging 3.2±0.2 2.6±0.2 3.6±0.2 Code

EPA240D-SOT89

Abstract: EPA240D EPA240
Contextual Info: Excelics EPA240D-SOT89 DATA SHEET DC-6GHz High Efficiency Heterojunction Power FET Features    '5$,1 6285&      (Top View All Dimensions In Mils Applications • • •  $ &# *$7( • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE

Contextual Info: T N 25D Lji Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering information BVDSS/ Order Number / Package f*DS ON ^ G S (th ) ' d (ON) (max) (max) (min) TO-243AA* DICE+ 350V 120 1.8V 1.0A — TN2535ND 400V 12£i 1.8V 1.0A TN2540N8

Contextual Info: TN2535 I Ljà Supertex. inc. I l L J U U 254° W Lr Low Thresh old N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^DS ON ^GS(th) l[)(ON) b v dgs (max) (max) (min) 350V 12a 1.8V 400V 12Q 1.8 V Order Number / Package TO-243AA*

LA4070

Abstract: D0B034 diode as6 preamp ALC Voice Detector
Contextual Info: SANYO SEMIC ONDUCTOR. IE E » I 7Tì7Q7ti 0003020 CORP T- 7S- 07- \5 LA2800N » , 1 i. - i -r *-> 3061 • '- Monolithic Linear IC Telephone Answering Machine 25 7 2 ■ . General Description The LA2800N is a telephone answering machine-use bipolar IC that performs the

CDRH4D18-100

Abstract: JMK212BJ226MG-T aa 472m AS1322 AS1322A AS1322B GRM31CR70J106KA01L SUMI L4578
Contextual Info: AS1322 D a ta S he e t L o w Vo l ta g e , M i c r o p o w e r, D C - D C St e p - U p C o n v e r t e r s 1 General Description 2 Key Features The AS1322A and the AS1322B are synchronous, fixed frequency, very high-efficiency DC-DC boost converters capable of supplying 3.3V at 150mA from a single AAsupply. Compact size and minimum external parts

SOF-26

Abstract: SZP-3026Z
Contextual Info: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with

Contextual Info: Coils/Inductors/Transfomers > Chip Coils > for Choke Wire Wound Type Data Sheet Chip Coils 1 for Choke Wire Wound Type LQH43C Series 1812 Size • Dimensions ■ Packaging 3.2±0.2 2.6±0.2 3.6±0.2 Code Packaging Minimum Quantity L 180mm Embossed Tape 500

M81735FP

Abstract: mosfet h bridge inverter m81735 half bridge driver 16P2N VB-24 pulsed UV
Contextual Info: MITSUBISHI SEMICONDUCTORS <HVIC> M81735FP HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81735FP is high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION TOP VIEW FEATURES ●FLOATING SUPPLY VOLTAGE ････････600V

EFC240B

Contextual Info: EFC240B Low Distortion GaAs Power FET FEATURES • • • • • • • 960 50 +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE

MSM386SN4

Abstract: MSM386SV4 MSM386SN2 MSM386SV RS232C 65545 MSM386SN
Contextual Info: MICROSPACE PC/104 Overview Type CPU 2nd Level Cache Performance MHz DRAM Min-Max (MB) Onboard Flash (MB) DiskOnChip Socket CompactFlash Socket PCCard Interface Mouse, Keyboard Keymatrix Floppy Interface IDE Interface Onboard IDE-Flash COM1 COM2 COM3 COM4

NTCG103JF103

Abstract: smx3202 NTCG103JF103FT ntcg103jf CYPRESS CY7C63001A A2 DIODE SMD CODE MARKING 0F SMB135 NR3015T4R7M CRCW0402150 smd transistor H07
Contextual Info: SMB135 Preliminary Datasheet Programmable Switch-mode, USB/AC Input Li+ Battery Charger with TurboCharge Mode* FEATURES & APPLICATIONS INTRODUCTION • Programmable USB/AC Li-Ion battery charger • TurboChargeTM Mode: 750mA output from 500mA USB • High-efficiency current-mode PWM controller