156O Search Results

Contextual Info: FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

608Z

Abstract: FDC608PZ marking 58a SuperSOT -6
Contextual Info: tm FDC608PZ P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

Contextual Info: FORM 4 .0 4 - 0 0 1 B LTR REVISION DATE RELEASED APPD 0 5 -2 4 -1 0 01.040 1.885±.01 0 [47.88±0.25] 0.590 [14.99] RoHS COMPLIANT 20 02 /95 /E C NOTES: REVISION NOTIFICATION 1. LENS MATERIAL: CLEAR, LEXAN OR POLYCARBONATE I 2. SLEEVE MATERIAL: POLYCARBONATE

Si3445DV

Contextual Info: Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.

Contextual Info: December 1996 NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

RL76

Abstract: ICL7662 Harris 7218 lCL7662 ICL7662MT INVERTER 10kW 7662 Harris A051 ICL7662IPA ICL7662CBD
Contextual Info: ICL7662 S E M I C O N D U C T O R CMOS Voltage Converter April 1994 Features Description • No External Diode Needed Over Entire Temperature Range The Harris ICL7662 is a monolithic high-voltage CMOS power supply circuit which offers unique performance advantages over previously available devices. The ICL7662

FDR8321L

Abstract: SOIC-16 n-channel 2.5v mosfet
Contextual Info: August 2000 FDR8321L P-Channel MOSFET With Gate Driver For Load Switch Application General Description Features VDROP = 0.2V @ VIN= 5V, IL= 2.9A. RDS ON = 0.070 Ω VDROP = 0.2V @ VIN= 2.5V, IL= 2A. RDS(ON) = 0.105 Ω. This device is designed for configuration as a load

NDH8520C

Contextual Info: December 1996 NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.

Contextual Info: FDC640P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage

FDC633N marking convention

Contextual Info: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

Contextual Info: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.

Contextual Info: Si3456DV N-Channel PowerTrenchÒ MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain

marking 606

Abstract: diode marking EY
Contextual Info: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.

Contextual Info: November 1997 FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

CBVK741B019

Abstract: F63TNR F852 FDR835N NDH8321C
Contextual Info: January 1999 NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

RSM5853P

Abstract: SURFACE MOUNT schottky diode application 5V GATE TO SOURCE VOLTAGE MOSFET
Contextual Info: E L E C T R O N I C RSM5853P P-Channel 20Volt D-S MOSFET With Schottky Diode □ Application -These miniature surface mount MOSFET utilize a high cell density trench CF 1206-8 TOP VIEW process to provide low RDS(on) and to provide low RDS(on) and to ensure

8212c

Abstract: ICL8211 ICL8211 an027 ICL8211CPA REGULATOR IC 8212 27C zener ICL8211CBA ICL8211CTY LM199 ICL8212
Contextual Info: ICL8211, ICL8212 S E M I C O N D U C T O R Programmable Voltage Detectors April 1994 Features Description • High Accuracy Voltage Sensing and Generation The Harris ICL8211/8212 are micropower bipolar monolithic integrated circuits intended primarily for precise voltage

Contextual Info: FDC645N N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

CBVK741B019

Abstract: F63TNR FDC633N FDC638P SOIC-16
Contextual Info: June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

SOIC-16

Abstract: FDC654P
Contextual Info: March 1998 FDC654P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

CBVK741B019

Abstract: F63TNR FDC633N FDC642P
Contextual Info: FDC642P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for

CBVK741B019

Abstract: F63TNR F852 NDH8520C 28A-600 diode tnr
Contextual Info: December 1996 NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Single P-Channel, Logic Level, PowerTrench MOSFET

Abstract: P-Channel Logic Level PowerTrenchTM MOSFET F63TNR F852 FDR8308P SOIC-16
Contextual Info: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.