FDR835N
Abstract: 831N
Text: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDR6678A
FDR835N
831N
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F852 transistor
Abstract: No abstract text available
Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high
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FDT439N
F852 transistor
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Untitled
Abstract: No abstract text available
Text: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
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FD8305N
FDR8305N
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CBVK741B019
Abstract: F63TNR F852 FDR835N NDH8321C
Text: January 1999 NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very
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NDH8321C
CBVK741B019
F63TNR
F852
FDR835N
NDH8321C
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CBVK741B019
Abstract: F63TNR F852 FDR8305N FDR835N
Text: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
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FDR8305N
CBVK741B019
F63TNR
F852
FDR8305N
FDR835N
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CBVK741B019
Abstract: F63TNR F852 NDH8520C 28A-600 diode tnr
Text: December 1996 NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDH8520C
CBVK741B019
F63TNR
F852
NDH8520C
28A-600
diode tnr
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CBVK741B019
Abstract: F63TNR F852 FDR835N NDH831N
Text: July 1996 NDH831N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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NDH831N
CBVK741B019
F63TNR
F852
FDR835N
NDH831N
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Single P-Channel, Logic Level, PowerTrench MOSFET
Abstract: P-Channel Logic Level PowerTrenchTM MOSFET F63TNR F852 FDR8308P SOIC-16
Text: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.
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FDR8308P
Single P-Channel, Logic Level, PowerTrench MOSFET
P-Channel Logic Level PowerTrenchTM MOSFET
F63TNR
F852
FDR8308P
SOIC-16
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FDS6680S
Abstract: CBVK741B019 F011 F63TNR F852 FDS6690A FDS6690S FDS6984S L86Z
Text: FDS6984S Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6984S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages
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FDS6984S
FDS6984S
FDS6680S
CBVK741B019
F011
F63TNR
F852
FDS6690A
FDS6690S
L86Z
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F63TNR
Abstract: F852 D84Z CBVK741B019 FDR835N 831N
Text: SuperSOTTM-8 Tape and Reel Data and Package Dimensions SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive carbo n filled po ly carbon ate
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F63TNR
330cm
177cm
F852
D84Z
CBVK741B019
FDR835N
831N
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CBVK741B019
Abstract: F63TNR F852 FDR835N
Text: SuperSOTTM-8 Tape and Reel Data SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive carbo n filled po ly carbon ate
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F63TNR
330cm
177cm
CBVK741B019
F852
FDR835N
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CBVK741B019
Abstract: F63TNR F852 FDR6678A FDR835N
Text: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDR6678A
CBVK741B019
F63TNR
F852
FDR6678A
FDR835N
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F63TNR
Abstract: F852 FDR856P SOIC-16
Text: March 1998 FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very
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FDR856P
OT-23
F63TNR
F852
FDR856P
SOIC-16
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CBVK741B019
Abstract: F63TNR F852 FDR8521L FDR835N FDR8521
Text: FDR8521L P-Channel MOSFET With Gate Driver For Load Switch Application General Description Features This device is designed for configuration as a load switch and is particularly suited for power management in portable battery powered electronic equipment. Designed to
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FDR8521L
CBVK741B019
F63TNR
F852
FDR8521L
FDR835N
FDR8521
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858P
Abstract: F63TNR FDR858P SOIC-16
Text: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little
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FDR858P
OT-23
858P
F63TNR
FDR858P
SOIC-16
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FDR835N
Abstract: CBVK741B019 F63TNR F852 FDR6580 831N
Text: FDR6580 N-Chennal 2.5V Specified PowerTrenchTM MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior
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FDR6580
FDR835N
CBVK741B019
F63TNR
F852
FDR6580
831N
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CBVK741B019
Abstract: F63TNR F852 FDR6678A FDR835N
Text: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDR6678A
CBVK741B019
F63TNR
F852
FDR6678A
FDR835N
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F852
Abstract: F63TNR FDR840P fd840 00416
Text: FDR840P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .
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FDR840P
F852
F63TNR
FDR840P
fd840
00416
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F63TNR
Abstract: F852 FDR840P FDR840P840P
Text: FDR840P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .
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FDR840P
F63TNR
F852
FDR840P
FDR840P840P
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Untitled
Abstract: No abstract text available
Text: FDR836P P-Channel 2.5V Specified MOSFET General Description Features SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited
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FDR836P
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8521L
Abstract: No abstract text available
Text: FDR8521L P-Channel MOSFET With Gate Driver For Load Switch Application General Description Features This device is designed for configuration as a load switch and is particularly suited for power management in portable battery powered electronic equipment. Designed to
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FDR8521L
8521L
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F852 transistor
Abstract: F852 espec CBVK741B019 F63TNR FDR835N
Text: SuperSOTTM-8 Tape and Reel Data SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SSOT-8 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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330cm
177cm
F852 transistor
F852
espec
CBVK741B019
F63TNR
FDR835N
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Untitled
Abstract: No abstract text available
Text: August 1998 PRELIMINARY FDR8321L P-Channel MOSFET With Gate Driver For Load Switch Application General Description Features VDROP = 0.2V @ VIN= 5V, IL= 2.9A. RDS ON = 0.070 Ω VDROP = 0.2V @ VIN= 2.5V, IL= 2A. RDS(ON) = 0.105 Ω. This device is designed for configuration as a load
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FDR8321L
OT-23
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Untitled
Abstract: No abstract text available
Text: 1 9 9 9 =M l C O N D U C T O R tm FDR838P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2 .5 V specified M O SFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the
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FDR838P
allert01
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