Z 728
Abstract: 15N80Q IXFH15N80Q 15N80
Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings
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15N80Q
220TM
ISOPLUS220TM
728B1
123B1
728B1
065B1
Z 728
15N80Q
IXFH15N80Q
15N80
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q Q-Class VDSS ID25 RDS on Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM
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15N80Q
O-247
O-268
125OC
Figure10.
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15N80Q
Abstract: IXFH15N80Q
Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings
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15N80Q
220TM
ISOPLUS220TM
IXFH15N80Q
728B1
123B1
728B1
065B1
15N80Q
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q VDSS ID25 RDS on Q-Class = 800 V = 15 A = 0.60 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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15N80Q
15N80Q
O-268
O-247
Figure10.
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15N80Q
Abstract: IXFH15N80Q
Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings
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15N80Q
220TM
ISOPLUS220TM
728B1
123B1
728B1
065B1
15N80Q
IXFH15N80Q
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15N80Q
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFR 15N80Q VDSS ISOPLUS247TM Q Class ID25 = 800 V = 13 A = 0.60 W Electrically Isolated Back Surface RDS(on) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances trr £ 250 ns Preliminary data
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15N80Q
ISOPLUS247TM
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15N80Q
Abstract: 15N80 125OC IXFH14N80 IXFH15N80
Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q Q-Class VDSS ID25 RDS on Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM
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15N80Q
O-247
O-268
125OC
Figure10.
15N80Q
15N80
125OC
IXFH14N80
IXFH15N80
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Untitled
Abstract: No abstract text available
Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS 220TM Symbol Test Conditions Maximum Ratings
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15N80Q
220TM
IXFH15N80Q
728B1
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM Q Class IXFR 15N80Q VDSS = 800 V ID25 = 13 A RDS on = 0.60 W (Electrically Isolated Back Surface) trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
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ISOPLUS247TM
15N80Q
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Untitled
Abstract: No abstract text available
Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET Q-Class Electrically Isolated Back Surface VDSS ID25 RDS on = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings
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15N80Q
220TM
ISOPLUS220TM
728B1
123B1
728B1
065B1
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15N80Q
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q Q-Class VDSS ID25 RDS on Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM
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15N80Q
15N80Q
O-247
O-268
125OC
Figure10.
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transistor 12n60c
Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design
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ISOPLUS247TM
ISOPLUS247TM
PLUS247TM-package
FBO16-08N
FBE22-06N1
21-05QC
22-08N
75-01F
21-08i01
transistor 12n60c
12N60c equivalent
30N120D1
13N50 equivalent
12n60c
MOSFET 1200v 30a
MOSFET 1000v 30a
30n120d
CS20-22MOF1
12N60c MOSFET
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C1162
Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
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O-247
PLUS247
ISOPLUS247TM
O-204
O-268
O-264
76N06-11
76N06-12
80N06
180N06
C1162
C1280
26n60
60N25
C1328
120N20
C1146
C1104
C1158
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sd 20n60
Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06
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O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
76N07-11
76N07-12
100N10
170N10
sd 20n60
IXFX 44N80
20n80
60n60
9n80
C2625
power mosfet 100n20
IXFH32N50
230N10
8N80
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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C1146
Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
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O-247
PLUS247
ISOPLUS247TM
O-204
O-268
O-264
76N06-11
76N06-12
80N06
180N06
C1146
C1162
C1278
C1106
C1156
ixfh 60N60
C1142
c1238
C1104
ixfn 26n60
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Untitled
Abstract: No abstract text available
Text: | H | J IXFH 15N80Q IXFT 15N80Q HiPerFET Power MOSFETs V DSS = 800 V 15 A = 0.60 Q ^D25 ” RD S o n Q-Class t rr < 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, LowQ P relim inary data sheet Symbol TestConditions V T j = 2 5 °C to 150°C
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15N80Q
O-268
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Untitled
Abstract: No abstract text available
Text: DIXYS AdvancedTechnical Information P Electrically Isolated Back Surface = = — DS(on) ~ o o 00 HiPerFET Power MOSFETs IXFR 15N80Q V DSS ISOPLUS247™ Q Class ^D25 V 13 A 0.60 a trr <250 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
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15N80Q
ISOPLUS247TM
247TM
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12N60c equivalent
Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t
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ISOPLUS220TM
US247TM
247TM
ISOPLUS22rM
ISOPLUS227TM
IXFE180N10
IXFE73N30Q
IXFE48N50Q
IXFE48N50QD2
12N60c equivalent
13N50 equivalent
equivalent of IGBT 12N60C
motor IG 2200 19
ixlf 19n250a
24N60CD1
19N250
32N50
004II
27N80Q
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Untitled
Abstract: No abstract text available
Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs ISOPLUS247™ Q Class 15N80Q = 800 V 13 A _ — 0.60 Q VDSS ^D25 R Electrically Isolated Back Surface DS(on) t < 250 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
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ISOPLUS247â
IXFR15N80Q
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C1218
Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268
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67N10
75N10
75N10Q
80N10Q
O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
C1218
C1222
ixfh 60N60
IXFX 44N80
C1138
C1238
20n80
C1228
C1172
IXFN 230N10 230N10
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