26N60P
Abstract: PLUS220SMD
Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 = = RDS on ≤ ≤ trr TO-247 (IXFH) Symbol
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26N60P
26N60PS
O-247
PLUS220SMD
PLUS220
O-268
26N60P
PLUS220SMD
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26n60q
Abstract: No abstract text available
Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFK 26N60Q IXFX 26N60Q VDSS ID25 RDS on Q-Class = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings VDSS VDGR
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26N60Q
247TM
O-264
728B1
26n60q
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26n60
Abstract: 28n60 IXFK28N60 IXFH26N60 IXFT26N60 ixfh 26 n 49
Text: HiPerFETTM Power MOSFETs VDSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 600 V 26 A 600 V 28 A trr £ 250 ns RDS on 0.25 W 0.25 W Preliminary data Symbol Test Conditions Maximum Ratings IXFH/ IXFT
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26N60/IXFT
26N60
28N60
O-247
26n60
28n60
IXFK28N60
IXFH26N60
IXFT26N60
ixfh 26 n 49
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60 IXFT 26N60 ID25 RDS on 600 V 26 A 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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26N60
O-268
O-247
O-268
728B1
123B1
065B1
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26N60Q
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS Electrically Isolated Back Surface N-Channel Enhancement Mode Avalance Rated, High dV/dt Low Gate Charge and Capacitances trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C
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26N60Q
ISOPLUS247TM
247TM
E153432
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFK 26N60Q IXFX 26N60Q VDSS ID25 RDS on Q-Class = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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26N60Q
247TM
728B1
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26n60
Abstract: 26N60P PLUS220SMD
Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions
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26N60P
26N60PS
O-247
PLUS220SMD
PLUS220
O-268
26n60
26N60P
PLUS220SMD
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max2678
Abstract: No abstract text available
Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω ≤ 200 ns trr IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C
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26N60P
26N60PS
O-247
O-268
PLUS220
max2678
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Untitled
Abstract: No abstract text available
Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET VDSS ID25 = = RDS on ≤ ≤ trr IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol
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26N60P
26N60PS
O-247
405B2
26N60P
PLUS220
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DSA003703
Abstract: 26n60
Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions
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26N60P
26N60PS
O-247
O-268
DSA003703
26n60
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26N60P
Abstract: TO-248
Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions
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26N60P
26N60PS
O-247
O-268
PLUS220
PLUS220SMD
TO-248
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26N60Q
Abstract: C2770 IXFH26N60Q
Text: HiPerFETTM Power MOSFETs IXFH 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM
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26N60Q
O-247
728B1
123B1
728B1
065B1
26N60Q
C2770
IXFH26N60Q
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26N60Q
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V I D25 IDM I AR
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26N60Q
26N60Q
O-247
O-268
O-268
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26N60Q
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class VDSS ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600
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26N60Q
26N60Q
O-247
O-268
O-264
O-268
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spf560
Abstract: 26N60Q
Text: HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS Electrically Isolated Back Surface N-Channel Enhancement Mode Avalance Rated, High dV/dt Low Gate Charge and Capacitances trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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26N60Q
ISOPLUS247TM
spf560
26N60Q
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26N60Q
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V
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26N60Q
26N60Q
O-247
O-268
O-268AA
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26N60
Abstract: 28n60
Text: HiPerFETTM Power MOSFETs VDSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 600 V 26 A 600 V 28 A trr £ 250 ns RDS on 0.25 W 0.25 W Preliminary data Symbol Test Conditions Maximum Ratings IXFH/ IXFT
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26N60/IXFT
26N60
28N60
O-247
O-268AA
28n60
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26n60q
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM
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26N60Q
O-247
728B1
26n60q
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26n60
Abstract: 26N60Q k 2134
Text: HiPerFETTM Power MOSFETs IXFK 26N60Q IXFX 26N60Q VDSS ID25 RDS on Q-Class = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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26N60Q
247TM
O-264
728B1
26n60
26N60Q
k 2134
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5007a
Abstract: No abstract text available
Text: IXTH 26N60P IXTQ 26N60P IXTT 26N50P IXTV 26N60P IXTV 26N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C
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26N60P
26N50P
26N60PS
O-247
O-268
26N60P
5007a
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Untitled
Abstract: No abstract text available
Text: PolarHVTM Power MOSFET VDSS = 800 V ID25 = 16 A Ω RDS on ≤ 600 mΩ ≤ 250 ns trr IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS
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16N80P
16N80PS
O-247
26N60P
26N60P
26N60PS
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transistor 12n60c
Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design
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ISOPLUS247TM
ISOPLUS247TM
PLUS247TM-package
FBO16-08N
FBE22-06N1
21-05QC
22-08N
75-01F
21-08i01
transistor 12n60c
12N60c equivalent
30N120D1
13N50 equivalent
12n60c
MOSFET 1200v 30a
MOSFET 1000v 30a
30n120d
CS20-22MOF1
12N60c MOSFET
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Untitled
Abstract: No abstract text available
Text: n ix Y S Advanced Technical Information HiPerFET Power MOSFETs V DSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr D DS on ^D25 600 V 26 A 600 V 28 A trr < 250 ns 0.25 Q 0.25 Q Maximum Ratings IXFH/IXFT
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26N60/IXFT
26N60
28N60
O-247
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12N60c equivalent
Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t
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ISOPLUS220TM
US247TM
247TM
ISOPLUS22rM
ISOPLUS227TM
IXFE180N10
IXFE73N30Q
IXFE48N50Q
IXFE48N50QD2
12N60c equivalent
13N50 equivalent
equivalent of IGBT 12N60C
motor IG 2200 19
ixlf 19n250a
24N60CD1
19N250
32N50
004II
27N80Q
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