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    26N60 Search Results

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    26N60 Price and Stock

    Vishay Siliconix SIHH26N60E-T1-GE3

    MOSFET N-CH 600V 25A PPAK 8 X 8
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    DigiKey SIHH26N60E-T1-GE3 Cut Tape 5,625 1
    • 1 $6.35
    • 10 $4.263
    • 100 $6.35
    • 1000 $2.52
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    SIHH26N60E-T1-GE3 Digi-Reel 5,625 1
    • 1 $6.35
    • 10 $4.263
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    SIHH26N60E-T1-GE3 Reel 3,000
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    Littelfuse Inc IXFH26N60P

    MOSFET N-CH 600V 26A TO247AD
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    DigiKey IXFH26N60P Tube 5,040 1
    • 1 $8.78
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    • 100 $5.48833
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    RS IXFH26N60P Bulk 8 Weeks 30
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    New Advantage Corporation IXFH26N60P 210 1
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    • 100 $7.33
    • 1000 $6.84
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    STMicroelectronics STL26N60DM6

    MOSFET N-CH 600V 15A PWRFLAT HV
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    DigiKey STL26N60DM6 Digi-Reel 2,997 1
    • 1 $4.72
    • 10 $3.123
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    STL26N60DM6 Cut Tape 2,997 1
    • 1 $4.72
    • 10 $3.123
    • 100 $4.72
    • 1000 $1.70703
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    STL26N60DM6 Reel 3,000
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    Avnet Americas STL26N60DM6 Reel 14 Weeks 3,000
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    Mouser Electronics STL26N60DM6
    • 1 $4.44
    • 10 $3.01
    • 100 $2.17
    • 1000 $1.71
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    STMicroelectronics STL26N60DM6 1
    • 1 $4.35
    • 10 $2.95
    • 100 $2.13
    • 1000 $1.76
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    TME STL26N60DM6 1
    • 1 $3.69
    • 10 $3.32
    • 100 $2.93
    • 1000 $2.37
    • 10000 $2.09
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    Avnet Silica STL26N60DM6 15 Weeks 3,000
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    EBV Elektronik STL26N60DM6 15 Weeks 3,000
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    STMicroelectronics STFI26N60M2

    MOSFET N-CH 600V 20A I2PAKFP
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    DigiKey STFI26N60M2 Tube 1,494 1
    • 1 $4.31
    • 10 $4.31
    • 100 $4.31
    • 1000 $1.53637
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    Vishay Siliconix IRFP26N60LPBF

    MOSFET N-CH 600V 26A TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFP26N60LPBF Tube 1,384 1
    • 1 $10.65
    • 10 $10.65
    • 100 $10.65
    • 1000 $5
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    26N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    26N60P

    Abstract: PLUS220SMD
    Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 = = RDS on ≤ ≤ trr TO-247 (IXFH) Symbol


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    PDF 26N60P 26N60PS O-247 PLUS220SMD PLUS220 O-268 26N60P PLUS220SMD

    26n60q

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFK 26N60Q IXFX 26N60Q VDSS ID25 RDS on Q-Class = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings VDSS VDGR


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    PDF 26N60Q 247TM O-264 728B1 26n60q

    26n60

    Abstract: 28n60 IXFK28N60 IXFH26N60 IXFT26N60 ixfh 26 n 49
    Text: HiPerFETTM Power MOSFETs VDSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 600 V 26 A 600 V 28 A trr £ 250 ns RDS on 0.25 W 0.25 W Preliminary data Symbol Test Conditions Maximum Ratings IXFH/ IXFT


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    PDF 26N60/IXFT 26N60 28N60 O-247 26n60 28n60 IXFK28N60 IXFH26N60 IXFT26N60 ixfh 26 n 49

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60 IXFT 26N60 ID25 RDS on 600 V 26 A 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    PDF 26N60 O-268 O-247 O-268 728B1 123B1 065B1

    26N60Q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS Electrically Isolated Back Surface N-Channel Enhancement Mode Avalance Rated, High dV/dt Low Gate Charge and Capacitances trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C


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    PDF 26N60Q ISOPLUS247TM 247TM E153432

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFK 26N60Q IXFX 26N60Q VDSS ID25 RDS on Q-Class = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    PDF 26N60Q 247TM 728B1

    26n60

    Abstract: 26N60P PLUS220SMD
    Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions


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    PDF 26N60P 26N60PS O-247 PLUS220SMD PLUS220 O-268 26n60 26N60P PLUS220SMD

    max2678

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω ≤ 200 ns trr IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


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    PDF 26N60P 26N60PS O-247 O-268 PLUS220 max2678

    Untitled

    Abstract: No abstract text available
    Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET VDSS ID25 = = RDS on ≤ ≤ trr IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol


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    PDF 26N60P 26N60PS O-247 405B2 26N60P PLUS220

    DSA003703

    Abstract: 26n60
    Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions


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    PDF 26N60P 26N60PS O-247 O-268 DSA003703 26n60

    26N60P

    Abstract: TO-248
    Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions


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    PDF 26N60P 26N60PS O-247 O-268 PLUS220 PLUS220SMD TO-248

    26N60Q

    Abstract: C2770 IXFH26N60Q
    Text: HiPerFETTM Power MOSFETs IXFH 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM


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    PDF 26N60Q O-247 728B1 123B1 728B1 065B1 26N60Q C2770 IXFH26N60Q

    26N60Q

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V I D25 IDM I AR


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    PDF 26N60Q 26N60Q O-247 O-268 O-268

    26N60Q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class VDSS ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600


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    PDF 26N60Q 26N60Q O-247 O-268 O-264 O-268

    spf560

    Abstract: 26N60Q
    Text: HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS Electrically Isolated Back Surface N-Channel Enhancement Mode Avalance Rated, High dV/dt Low Gate Charge and Capacitances trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    PDF 26N60Q ISOPLUS247TM spf560 26N60Q

    26N60Q

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V


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    PDF 26N60Q 26N60Q O-247 O-268 O-268AA

    26N60

    Abstract: 28n60
    Text: HiPerFETTM Power MOSFETs VDSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 600 V 26 A 600 V 28 A trr £ 250 ns RDS on 0.25 W 0.25 W Preliminary data Symbol Test Conditions Maximum Ratings IXFH/ IXFT


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    PDF 26N60/IXFT 26N60 28N60 O-247 O-268AA 28n60

    26n60q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM


    Original
    PDF 26N60Q O-247 728B1 26n60q

    26n60

    Abstract: 26N60Q k 2134
    Text: HiPerFETTM Power MOSFETs IXFK 26N60Q IXFX 26N60Q VDSS ID25 RDS on Q-Class = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    PDF 26N60Q 247TM O-264 728B1 26n60 26N60Q k 2134

    5007a

    Abstract: No abstract text available
    Text: IXTH 26N60P IXTQ 26N60P IXTT 26N50P IXTV 26N60P IXTV 26N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


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    PDF 26N60P 26N50P 26N60PS O-247 O-268 26N60P 5007a

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET VDSS = 800 V ID25 = 16 A Ω RDS on ≤ 600 mΩ ≤ 250 ns trr IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS


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    PDF 16N80P 16N80PS O-247 26N60P 26N60P 26N60PS

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


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    PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S Advanced Technical Information HiPerFET Power MOSFETs V DSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr D DS on ^D25 600 V 26 A 600 V 28 A trr < 250 ns 0.25 Q 0.25 Q Maximum Ratings IXFH/IXFT


    OCR Scan
    PDF 26N60/IXFT 26N60 28N60 O-247

    12N60c equivalent

    Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
    Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t


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    PDF ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q