15CFC Search Results

d2s diode

Abstract: D2S DIODE schottky d2s schottky d2s6m diode d2s 251C AX078
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE Package I AX078 D2S6M 60V 2A i Feature • Tj=15CfC • Tj=150°C • P r r s m P K ^ V î/ x S ü E • P rrsm 27.5 • DC/D c u y jt— ? • WM.f-hs O A tlfg • jS S .J K 27.5 I 5 I Rating Pi <»4.o •2:

marking code aaat

Abstract: AX057 marking aaat sg diode code marking diode marking code U6 46t marking diode MARKING CODE sg d1ns6
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE Package I AX057 D1NS6 * I 60 V 1A i ÜJ Feature • Tj=15CfC • T j= 1 5 0 °C • P rrsm P K ^ V î/x S ü E • P rrsm <b2.6 »2 Rating M Main Use • Switching Regulator • D C /D c u y jt— ? Unit : mm Weight 0.19« (Typ >

Contextual Info: HiPerFAST IGBT with Diode IXGH30N60BD1 CES ^C25 v CE sat Combi Pack ^fi(typ) Symbol Test Conditions VCES Tj = 25°C to 150PC 600 V v CGR Tj = 25°C to 15CFC; RGE = 1 MQ 600 V v Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 60 A ^C90 Tc = 90° C

DIODE d3s

Abstract: MARKING MM d3s diode d3s4m D3S4 d3s4m diode diode MARKING CODE A9
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE D3S4M 40V 3A Feature • Tj=15CfC • Tj=150°C • P r r sm P K ^ V î/ x S ü E • P rrsm Rating Main Use • Sw itching Regulator • DC/D c u y jt— ? • D C /D C Converter • W M . f - h s O A t lf g • Hom e Appliance, G am e, Office Automation

AX078

Abstract: MARKING JM 251C 25T160 d2s4m D2S4 122T
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE D2S4M Unit : mm Package I AX078 W eight 0.38g Typ 40V 2A CD = E Feature • Tj=15CfC • T j= 1 5 0 °C • P rrsm P K ^ V î/x (S ü E • P rrsm 27.5 Rating 27.5 I Main Use M * iS M iK im M arking • Switching Regulator

D1NS4 diode

Abstract: AX057 marking aaat ji13t
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE Package I AX057 D1NS4 Unit : mm Weight 0.19k T yp 40 V 1A 2^ i Feature 02.6 • Tj=150°C • P rr sm Rating • Tj=15CfC • P r r s m P K ^ V î/ x (S ü E *2 -M - Main Use • • • • • DC/D c u y j t —?

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N5002

Contextual Info: TYPES 2N5002, 2N5004. 2N5152, 2N5154 N-P-N SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TR AN SISTO RS W IT H CO M PUTER-D ESIG NED ISO TH ER M A L G EO M ETR Y 3 3 C B -4 mC< • For Complementary Use with 2N 5003, 2N 5005, 2N 51 51, and 2N 5153

OX36D-S-MR-R

Abstract: dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117
Contextual Info: ABOWEI n r r y /^ B i i ij Products BOWEI IN TEG RA TED C IR C U IT S C O .,LTD 2 0 0 7 .5 A bow ei BOWEI is one ofthe leading RF/microwave solution providers in China. With more than twenty years extensive experience, BOWEI has been engineering and manufacturing

Contextual Info: SGS-THOMSON * 7 m TDA8140 I* ® q 1 [L M (q M © S HORIZONTAL DEFLECTION POWER DRIVER • CONTROLLED DRIVING OF THE POWER TRANSISTOR DURING TURN ON AND OFF PHASE FOR MINIMUM POWER DISSIPA­ TION AND HIGH RELIABILITY ■ HIGH SOURCE AND SINK CURRENT CAPA­

KA1M0680

Contextual Info: SAMSUNG POWER SWITCH KA1M0680 FEATURES TO-3P -P recision fixed operating frequency 70KHz -P u lse by pulse over current limiting -O v e r load protection -Internal thermal shutdown function -U n d e r voltage lockout -Internal high voltage sense FET -S o ft start

CRD Diode B

Abstract: irgni120f06
Contextual Info: International Sor]Rectifier PD-9.974C IRGNI120F06 “CHOPPER" IGBT INT-A-PAK Fast Speed IGBT • Rugged Design • Simple gate-drive .Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail" losses Description

SJE1497

Abstract: Transistor SJE1497
Contextual Info: ¿2&M0SPEC PNP PNP SILICON POWER TRANSISTORS SJE1497 SJE1497 transistor is designed for use in general purpose Power amplifier,verticai output application FEATURES: * Collector-Emitter Voltage v c e o = 150V Min * DC Current Gain hFE= 30(Min)@lc= 300mA 1.5 AMPERE

CDSH3-16-G

Abstract: CDSH3-56-G CDSH3-70-G CDSH3-99-G SMD Diode
Contextual Info: COMCHIP Small Signal Switching Diodes S M D D IO D E S P E C IA L IS T CDSH3-99-G/ 70-G/ 56-G/ 16-G Reverse Voltage: 85 Volts Forward Continue Current:155mA RoHS Device Features Designed for mounting on small surface. High speed switching. High mounting capability, strong surge

CDP18S601

Abstract: CDP1802CD MPM-206 RCA cosmac 1802 CD4061 CDP18S012 CDP1802CE RCA-CDP1802 im6508 CDP18S007
Contextual Info: RCA COS/MOS Memories, Microprocessors, and Support Systems This DATABOOK contains complete technical in­ formation on the full line of COS/MOS memory and microprocessor integrated circuits, COSMAC microboard computer systems, and COSMAC microprocessor support systems available from

DM8570

Abstract: DM8520 CV 7599 diode SN7401 DM9093 54175 MT28F400B3WG-8 vox vkw DM7570 logic diagram of 74185 SN54176
Contextual Info: Introduction Here is the new Digital Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from small instruments to computer designs. For information regarding newer devices introduced since the printing of this handbook, or for further

Contextual Info: _ CY7C225 CYPRESS _ SEMICONDUCTOR 512 x 8 Registered PROM Features • C M O S for optimum speed/pow er • Slim , 300 mil, 24 pin plastic or hermetic D IP , or 28 pin LCC floating gate technology and byte-wide intelligent program m ing algorithms.

AN211

Abstract: lm10blh LM10CT shunt regulator negative isolated voltage sensor
Contextual Info: LM10 National mm Semiconductor LM10 Operational Amplifier and Voltage Reference General Description The LM10 series are monolithic linear ICs consisting of a precision reference, an adjustable reference buffer and an independent, high quality op amp. The unit can operate from a total supply voltage as low as

1124G

Abstract: TCDT1120 DIN 50014
Contextual Info: Temic Semiconductors TCDT1120 G Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The TCDT1120(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.

power ic 501 amp

Abstract: MJE305 MJE2955T ST MJE2955T MJE3055T
Contextual Info: MJE2955T PNP / MJE3055T NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 200 mA, lB = 0 ) Collector Cutoff Current (V CE = 3 0 V ,IB = 0 )

transistor 2SC2922

Abstract: 2SC2922 150W TRANSISTOR AUDIO AMPLIFIER power amplifier 2sc2922 2SA1216
Contextual Info: Æ & m o s p e c HIGH-POWER NPN SILICON POWER TRANSISTORS .designed for use in general-purpose amplifier and switching application. FEATURES: * Recommend for 150W High Fidelity Audio Frequency Amplifier Output stage * Complementary to 2SA1216 17 AMPERE POWER

d 5287 transistor

Abstract: 2N6127 transistor c 5287 A12LC
Contextual Info: TYPE 2N6127 P-N-P SILICON POWER TRANSISTOR H IG H -F R E Q U E N C Y , HIGH-PO W ER T R A N S IS T O R W ITH C O M P U T E R -D E S IG N E D IS O T H E R M A L G E O M E T R Y 3 05 H mc < < '" S ra £ « 40 mJ Reverse Energy Rating with lc = 20 A and 4 V Reverse Bias

15 3cv sec

Contextual Info: International IQR Rectifier PD - 9.1592A IRG4BC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10ps @ 125°C, V qe = 15V

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY