15JUL96 Search Results

Contextual Info: r ” 1 1 I 2 RECOMMENDED HOLE PATTERN POS 1 POS 2 NOTE 2 ROW B .200 5 . 08 MAX ROW A 1 , 02 TYP PO S 2 1 NDTE 2 T O L , NDN-ACCUM , A A NDTE 3— •NOTE 5 / X ./ \ nr NO TE 6 v7 mot'l. code NOTE 1 tolerances unless otherwise specified 1/23/8S linear S.LOW 15JUL96

TSTS710

Contextual Info: Tem ic TSTS710. S e m i c o n d u c t o r s GaAs IR Emitting Diodes in Hermetically Sealed TO 18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed T O -18 pack­ age. Their glass lenses provide a very high radiant

telefunken ha 880

Contextual Info: T em ic TSHA620 S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 05 mm T-P/t Package Description The TSHA620. series are high efficiency infrared emit­ ting diodes in GaAlAs on GaAIAs technology, molded in a clear, untinted plastic package.

LT 5203

Abstract: a5201
Contextual Info: Temic TSHA520. S h m i n n d u t l •* r v GaAlAs Infrared Emitting Diodes in 05 mm (T-1% Package Description The TSH A 520. series are high efficiency infrared em itting diodes in G aA lA s on G aA lA s technology, m olded in a clear, untinted plastic package.

Contextual Info: Tem ic BPV22NF S e m i c o n d u c t o r s Silicon PIN Photodiode Description B PV 22N F is a high speed and high sensitive PIN photo­ diode in a plastic package with a spherical side view lens. T he epoxy package itself is an IR filter, spectrally m atched to G aA s on G aA s and G aA lA s on GaAIAs IR

K423

Abstract: CI 8426
Contextual Info: Temic BPV23NF S e m i c o n d u c t o r s Silicon PIN Photodiode Description B PV 23N F is a high speed and high sensitive PIN photo­ diode in a plastic package w ith a spherical side view lens. T he epoxy package itself is an IR filter, spectrally m atched to G aA s on GaA s and G aA lA s on G aA lA s IR

Contextual Info: Tem ic TSUS540. S e m i c o n d u c t o r s GaAs Infrared Emitting Diodes in 0 5 mm T-13A Package Description TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package. The devices are spectrally

Contextual Info: Temic BPW34 S e m i c o n d u c t o r s Silicon PIN Photodiode Description T h e B P W 3 4 is a h ig h s p e e d a n d h ig h se n s itiv e P IN p h o to ­ d io d e in a m in ia tu re fla t p la stic p a ck a g e . Its lo p v iew c o n stru c tio n m a k e s it id eal a s a lo w c o st re p la c e m e n t o f

TSTA7100

Contextual Info: Temic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very high radiant

Contextual Info: Tem ic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA 7100 is a high efficiency infrared em itting diode in G aA lA s on G aA lA s technology in a herm etically sealed T O -1 8 package. Its glass lens provides a very high radiant

BPW20R

Contextual Info: BPW20R Temic S e m i c o n d u c t o r s Silicon PN Photodiode Description B P W 2 0 R is a p la n a r S ilico n P N p h o to d io d e in a h e rm e ti­ c ally se a le d s h o rt T O - 5 c ase , e sp e c ia lly d e sig n e d fo r h ig h p re c isio n lin e a r a p p lic atio n s.

8021C

Contextual Info: Tem ic TSTS730. S e m i c o n d u c t o r s GaAs IR Emitting Diodes in Hermetically Sealed TO 18 Case Description The TSTS730. series are infrared emitting diodes in stan­ dard GaAs technology in a hermetically sealed T O -18 package. Their glass lenses provide a high radiant inten­

8002E

Contextual Info: Tem ic TSHA520 S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 05 mm T-1% Package Description The TSHA520. series are high efficiency infrared emit­ ting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package,

ss 7941

Abstract: TSHA4400
Contextual Info: Tem ic TSHA440. S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 0 3 mm T -l Package Description The TSHA44.series are high efficiency infrared ermitting diodes in GaAlAs on GaAlAs technology, molde;d in a clear, untinted plastic package.

Contextual Info: Temic TEMT2200 Se m i c o n d u cfors Silicon NPN Phototransistor Description T E M T 2200 is a high speed silicon N P N epitaxial planar phototransistor in m iniature S O T -23 package for surface m ounting on printed boards. D ue to its w aterclear epoxy

TEMT2100

Abstract: alf w sot-23
Contextual Info: Temic TEMT2100 S e m i c o n d u c t o r s Silicon NPN Phototransistor Description TEMT2100 is a high speed silicon NPN epitaxial planar phototransistor in miniature SOT-23 package for surface mounting on printed boards. Due to its waterclear epoxy the device is sensitive to visible and near infrared radi­

TFM 5360

Abstract: tfm 5380 tfm 5560 Temic TFM 5360 TFM 5300 ir TFM 5400 tfm 5330 TFM 5300 tfms 5360 infrared temic TFMS 5380
Contextual Info: TFMS 5.0 Photo Modules for PCM Remote Control Systems Available types for different carrier frequencies Type TFMS 5300 TFMS 5360 TFMS 5380 TFMS 5560 f0 30 kHz 36 kHz 38 kHz 56 kHz Type TFMS 5330 TFMS 5370 TFMS 5400 f0 33 kHz 36.7 kHz 40 kHz Description The TFMS 5.0 – series are miniaturized receivers for infrared remote control systems. PIN diode and

LP 8029

Abstract: TEMT3700 TSMS3700
Contextual Info: TSMS3700 GaAs Infrared Emitting Diode in SMT Package Description TSMS3700 is a standard GaAs infrared emitting diode in a miniature PL–CC–2 package. Its flat window provides a wide aperture, making it ideal for use with external optics. The diode is case compatible to the TEMT3700 phototransistor, allowing the user to assemble his own optical

tsts 7503

Abstract: TSTS750 TSTS7500 TSTS7501 TSTS7502 TSTS7503
Contextual Info: TSTS750. GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their flat glass windows make them ideal for use with external optics.

TEST2600

Abstract: TSSS2600 tp100 sensor
Contextual Info: TSSS2600 GaAs IR Emitting Diode in Side View Miniature Package Description TSSS2600 is a miniature infrared emitting diode in GaAs on GaAs technology, molded in a clear, untinted plastic package with cylindrical side view lens. The device is spectrally matched to silicon photodiodes

TSTA7500

Contextual Info: TSTA7500 GaAlAs IR Emitting Diode, Hermetically Sealed TO18 Case Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its flat glass window makes it ideal for use with external optics.

BPV10NF

Abstract: 8436 TSSF4500
Contextual Info: BPV10NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and GaAlAs (l=870nm) IR emitters.

BPV22NF

Contextual Info: BPV22NF Silicon PIN Photodiode Description BPV22NF is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on GaAlAs IR

phototransistor S351P

Abstract: 8239 8582
Contextual Info: S351P Silicon NPN Phototransistor Description S351P is a very high sensitive silicon NPN epitaxial planar phototransistor in a low profile ø 5mm T–1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.