15MAR02 Search Results

UT-85-M17

Abstract: J103 transistor 3 pin kemet c chip
Contextual Info: MOTOROLA Order this document by MRF897/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF897 Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating

MRF2628

Abstract: MOTOROLA TRANSISTOR 726 transistor j246 J476 vk200 rf choke
Contextual Info: MOTOROLA Order this document by MRF2628/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF2628 . . . designed for 12.5 volt VHF large–signal power amplifiers in commercial and industrial FM equipment. • Compact .280 Stud Package

Epsilam-10

Contextual Info: MOTOROLA Order this document by MRF898/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF898 Designed for 24 Volt UHF large–signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of

j35 fet

Abstract: mrf5015 Nippon capacitors MRF5015 equivalent
Contextual Info: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistor LAST SHIP 15MAR02 The RF MOSFET Line MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device

BD136

Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

motorola j117

Abstract: j117 motorola transistor J128 transistor j117 C7L3 mrf492
Contextual Info: MOTOROLA Order this document by MRF492/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF492 Designed for 12.5 volt low band VHF large–signal power amplifier applications in commercial and industrial FM equipment.

NT 407 F power transistor

Abstract: DL110
Contextual Info: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high

Contextual Info: MOTOROLA Order this document by MRF899/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF899 Designed for 26 Volt UHF large–signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating

TL12

Abstract: 2052-1618 mrf650
Contextual Info: MOTOROLA Order this document by MRF650/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF650 Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz.

MRF247

Abstract: MOTOROLA 381 equivalent vk 200 amplifier mrf247
Contextual Info: MOTOROLA Order this document by MRF247/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF247 The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.

TRANSISTOR motorola 838

Abstract: j525 transistor
Contextual Info: MOTOROLA Order this document by MRF847/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF847 . . . designed for 12.5 volt UHF large–signal, common–base amplifier applications in industrial and commercial FM equipment operating in the range of

TRANSISTOR A331

Abstract: 395C-01
Contextual Info: MOTOROLA MRF6404 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

DO-204AC

Abstract: GPP20A GPP20M
Contextual Info: GPP20A thru GPP20M Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Junction Rectifiers Reverse Voltage 50 to 1000V Forward Current 2.0A DO-204AC DO-15 Features 0.034 (0.86) 0.028 (0.71) Dia. • Plastic package has Underwriters Laboratory

DF15005S

Abstract: DF1506S DF1501S DF1502S DF1504S DF1510S
Contextual Info: DF15005S thru DF1510S Vishay Semiconductors New Product formerly General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.5A Case Style DFS 0.205 5.2 0.195 (5.0) 0.047 (1.20)

BYW36

Abstract: BYW32 BYW36 v BYW32 3 BYW35 DO204AP DO-204AP BYW33 BYW34
Contextual Info: BYW32 thru BYW36 Vishay Semiconductors formerly General Semiconductor Miniature Glass Passivated Fast Switching Rectifier DO204AP Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction

Contextual Info: INDUCTORS Model ILS-3825 and ILS-2515 Ultra-Low-Profile Surface-Mount Power Inductor Only 1.19 mm Maximum Height Self-Shielded Chip Inductor for DC/DC Power Applications FEATURES • Inductance Values: 4.7 µH and 10 µH other values available upon request

DGP30

Abstract: CGP30
Contextual Info: CGP30 and DGP30 Vishay Semiconductors New Product formerly General Semiconductor Clamper/Damper Glass Passivated Rectifier DO-201AD Reverse Voltage 1400 to 1500V Forward Current 3.0A Features • Specially designed for clamping circuits, horizontal deflection systems and damper applications

Contextual Info: GPP20A thru GPP20M Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Junction Rectifiers Reverse Voltage 50 to 1000V Forward Current 2.0A DO-204AC DO-15 Features 0.034 (0.86) 0.028 (0.71) Dia. • Plastic package has Underwriters Laboratory

Contextual Info: IHLP-5050CE-03 Vishay Dale Low Profile, High Current Inductor FEATURES • • • • • • • Low profile. High current. Low loss up to 5MHz. Low DCR. Self shielded. Less than 10% L drop at full rated current. Patents received in US, Canada, S. Korea, France,

Contextual Info: IHLP-2525CZ-01 Vishay Dale Low Profile, High Current Inductor FEATURES • • • • • • • Low profile. High current. Low loss up to 5 MHz. Low DCR. Self shielded. Less than 10% L drop at full rated current. Patents received in US, Canada, S. Korea, France,

Contextual Info: 3.50±0.20 [.138±0.008] STANDOFF ABSTAND 20.57 [.810] 13.30 [.524] 13.20 [.520] 10.54 [.415] 10.16±0.13 [.400±0.005] RECOMMENDED PCB LAYOUT - COMPONENT SIDE VIEW EMPFOHLENER FUER LEITERPLATTE - BESTUCKUNGSSEITE TOL ±0.05 [.002] UNLESS NOTED RECOMMENDED PANEL

sps 1951 transistor

Abstract: mrf857s MOTOROLA ELECTROLYTIC CAPACITOR transistor motorola 359 mrf857
Contextual Info: MOTOROLA Order this document by MRF857/D SEMICONDUCTOR TECHNICAL DATA MRF857S Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. CLASS A

SF0035BA01000T

Contextual Info: 35.3 MHz Filter For VSB system L- IF applications Part Number SF0035BA01000T Micro Networks Corp., 324 Clark Street, Worcester, MA 01606, USA tel: 508-852-5400, fax:508-852-8456, www.micronetworks.com TYPICAL PERFORMANCE Horizontal: 2.5 MHz/div Vertical from top : Magnitude

MRF1946

Abstract: MRF1946A MOTOROLA 381 equivalent MRF1946 equivalent J-101-15
Contextual Info: MOTOROLA Order this document by MRF1946/D SEMICONDUCTOR TECHNICAL DATA MRF1946 MRF1946A . . . designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance