15MEV Search Results

ISL72991

Abstract: ISL72991RH K500
Contextual Info: Single Event Effects Testing of the ISL72991RH Adjustable Voltage Regulator June 2002 Introduction The intense, heavy ion environment encountered in space applications can cause a variety of effects in electronic circuitry, including single event transient SET , single event latchup

G2265E

Contextual Info: Temic MG2RT Semiconductors Radiation Tolerant 0.5-jim CMOS Sea-of-Gates 100k Rad Low Dose Rate Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured

Contextual Info: MG2RT Radiation Tolerant 0.5–µm CMOS Sea–of–Gates 100k Rad Low Dose Rate Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured using SCMOS3/2RT, a 0.5 micron drawn, 3 metal layers

9v to 5v voltage regulator

Abstract: Adjustable Positive Voltage Regulator 50v HS-117RH 5v to 9v voltage regulator capacitor 22uf HS-117 data sheet capacitor 22uF gold capacitor KRYPTON K500
Contextual Info: Single Event Effects Testing of the HS-117RH Adjustable Voltage Regulator June 2002 Introduction The intense, heavy ion environment encountered in space applications can cause a variety of effects in electronic circuitry, including single event transient SET , single event latchup

Contextual Info: Application Note 1666 Authors: Theju Bernard, Eric Thomson, Kevin Knudsen, Nick Vanvonno Single Event Effects Testing of the ISL75051SRH LDO SEE Testing: Summary and Conclusions Part Details Single Event Burnout/Latch-up • Function: 3A, radiation hardened, positive, ultra low dropout

fpga radiation

Abstract: SRAM Cross References Upset XQR4036XL RAM SEU UPS control circuitry RAM EDAC SEU Upsets Single Event Upset FPGA
Contextual Info: Single Event Effects Testing of Xilinx FPGAs Dr. Gary Lum Lockheed Martin, Sunnyvale, CA and Glen Vandenboom Xilinx, Inc. San Jose, CA Introduction Advanced Field Programmable Gate Arrays FPGAs operating at 3.3V were tested for single event effects (SEE) by

178M05

Abstract: RN4B RN3A marking 2GW RD3a RD2A marking 4GW marking "4gw" RD1A MARKING CODE RD3.A
Contextual Info: 固定抵抗器 FIXED RESISTORS OPERATING TEMP. K55VJ155C 特長 FEATURES 1AV4B: Y電流雑音が小さく耐パルス性が高い Yマルチマウントに特に適している 1AV4B: YCurrent noise level is low, yet highly resistant to pulses. YEspecially suitable for high speed automated mounting.

736e-02

Abstract: cross reference 4533 UT7Q512
Contextual Info: UTMC Application Note A Radiation Tolerant 4M SRAM for Space Applications Abstract Total ionizing dose and heavy ion single event effects data are presented for a radiation tolerant 100ns 4M SRAM UT7Q512 . The SRAM is shown to be resistant to between 20 and 35krad(Si) of total dose radiation (depending on the particular lot examined) at a relatively high dose rate of 46rad(Si)/s. The SRAM is