15N12 Search Results
15N12 Result Highlights (2)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TW015N120C |
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N-ch SiC MOSFET, 1200 V, 100 A, 0.020 Ω@18 V, TO-247 |
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TRS15N120HB |
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SiC Schottky Barrier Diode (SBD), 1200 V, 15 A, 2 in 1, TO-247 |
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15N12 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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15N12 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.25KB | 1 | ||
15N12 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.25KB | 1 | ||
15N120C3 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.25KB | 1 |
15N12 Price and Stock
Infineon Technologies AG IGB15N120S7ATMA1IGBT TRENCH FS 1200V 34A TO263-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IGB15N120S7ATMA1 | Digi-Reel | 620 | 1 |
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IGB15N120S7ATMA1 | Reel | 19 Weeks | 1,000 |
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IGB15N120S7ATMA1 | 881 |
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IGB15N120S7ATMA1 | Cut Tape | 1,000 | 1 |
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Infineon Technologies AG IHW15N120R3FKSA1IGBT TRENCH 1200V 30A TO247-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IHW15N120R3FKSA1 | Tube | 228 | 1 |
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IHW15N120R3FKSA1 | Tube | 19 Weeks | 240 |
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IHW15N120R3FKSA1 | 219 |
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IHW15N120R3FKSA1 | Bulk | 113 | 1 |
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IHW15N120R3FKSA1 | 20 | 1 |
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IHW15N120R3FKSA1 | 1 |
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IHW15N120R3FKSA1 | 20 Weeks | 240 |
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IHW15N120R3FKSA1 | 10 |
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Infineon Technologies AG IKW15N120CS7XKSA1IGBT TRENCH FS 1200V 36A TO247-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IKW15N120CS7XKSA1 | Tube | 216 | 1 |
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IKW15N120CS7XKSA1 | Tube | 19 Weeks | 240 |
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IKW15N120CS7XKSA1 | Bulk | 368 | 1 |
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IKW15N120CS7XKSA1 | 380 | 1 |
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IKW15N120CS7XKSA1 | Tube | 240 | 0 Weeks, 1 Days | 1 |
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IKW15N120CS7XKSA1 | 20 Weeks | 240 |
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Infineon Technologies AG IGW15N120H3FKSA1IGBT TRENCH FS 1200V 30A TO247-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IGW15N120H3FKSA1 | Tube | 150 | 1 |
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IGW15N120H3FKSA1 | Tube | 150 | 19 Weeks | 30 |
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IGW15N120H3FKSA1 | Bulk | 115 | 1 |
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IGW15N120H3FKSA1 | 18 | 1 |
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IGW15N120H3FKSA1 | Tube | 210 | 0 Weeks, 1 Days | 1 |
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IGW15N120H3FKSA1 | 20 Weeks | 240 |
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IGW15N120H3FKSA1 | 685 |
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IGW15N120H3FKSA1 | 211 |
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Toshiba America Electronic Components TW015N120C,S1FG3 1200V SIC-MOSFET TO-247 15MO |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TW015N120C,S1F | Tube | 60 | 1 |
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TW015N120C,S1F | Tube | 30 | 24 Weeks | 30 |
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TW015N120C,S1F | 55 |
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TW015N120C,S1F | Tube | 30 | 30 |
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15N12 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V = 30 A IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous |
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15N120C O-247 O-268 | |
15N12
Abstract: 575 C2
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15N120B O-220AB O-263 15N12 575 C2 | |
Contextual Info: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW |
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15N120B O-247 | |
IC IGBT 15N120
Abstract: 15n120 15n120 igbt IXRP 15N120 IXYS IXRA15N120 bi-directional switches IGBT "bi-directional switches" IGBT IXRP15N120 induction heating circuits
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15N120 O-220 O-263 O-220 IC IGBT 15N120 15n120 15n120 igbt IXRP 15N120 IXYS IXRA15N120 bi-directional switches IGBT "bi-directional switches" IGBT IXRP15N120 induction heating circuits | |
15N120
Abstract: IC IGBT 15N120 bi-directional switches IGBT "bi-directional switches" IGBT 15n120 igbt igbt clip igbt for induction heating ic IXRP 15N120 IXYS
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15N120 O-220 20070703a 15N120 IC IGBT 15N120 bi-directional switches IGBT "bi-directional switches" IGBT 15n120 igbt igbt clip igbt for induction heating ic IXRP 15N120 IXYS | |
15N120BD1
Abstract: 15N120 15N120CD1 IXGT15N120BD1
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15N120BD1 15N120CD1 O-247AD 15N120BD1 15N120 15N120CD1 IXGT15N120BD1 | |
IXSH15N120BContextual Info: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 |
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15N120B O-247 O-268 O-247) 13/1or IXSH15N120B | |
Contextual Info: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C |
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15N120C O-220AB O-263 728B1 | |
Contextual Info: IGBT with Diode IXSH 15N120AU1 ^C25 V CES SCSOA Capability CE sat Symbol Test Conditions V CES T , = 25°C to 150°C 1200 V vCGR T j = 25°C to 150°C; ReE= 1 MQ 1200 V v vGEM C ontinuous T ransient ±20 ±30 V V ^C2S ^C90 ^CM T c = 25°C T c = 90” C T c = 25°C , 1 ms |
OCR Scan |
15N120AU1 O-247 -100/ps; | |
Contextual Info: Advanced Technical Information IXGA 15N120C IXGP 15N120C IGBT Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat = 1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW |
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15N120C O-220AB O-263 O-220 | |
RGE 17-18
Abstract: TO220-4 weight
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OCR Scan |
15N120C O-220 O-263 RGE 17-18 TO220-4 weight | |
15N120Contextual Info: IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT with Diode Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW |
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15N120BD1 15N120 | |
Contextual Info: □ IXYS Advanced Technical Information IGBT IXGH 15N120C IXGT 15N120C V CES ^C25 V CE sat Lightspeed Series ^ fi(typ ) Symbol TestConditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20 V v GEM |
OCR Scan |
15N120C | |
IC IGBT 15N120
Abstract: 15n120 "bi-directional switches" IGBT bi-directional switches IGBT
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15N120 O-220 O-263 O-263 O-220 IC IGBT 15N120 15n120 "bi-directional switches" IGBT bi-directional switches IGBT | |
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001-045Contextual Info: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGH 15N120B IXGT 15N120B V CES ^C25 V CE sat ^fi(typ) Maximum Ratings Symbol TestC onditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20 |
OCR Scan |
15N120B 15N120B O-268 001-045 | |
RGE 17-18
Abstract: 10i2 TRI 1461
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OCR Scan |
15N120B 15N120B T0-220 O-263 RGE 17-18 10i2 TRI 1461 | |
15N120BD1
Abstract: 15N120CD1 IXGT15N120BD1
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15N120BD1 15N120CD1 O-247AD O-268 15N120CD1 IXGT15N120BD1 | |
Contextual Info: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 V |
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15N120B 15N120B O-220 O-263 | |
15n120Contextual Info: IXRA 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V IGBT with Reverse Blocking capability 2 TO-263AB 1 3 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES |
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15N120 O-263AB 20110120b 15n120 | |
Contextual Info: HiPerFASTTM IGBT IXGH 15N120B IXGT 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 |
Original |
15N120B 15N120B O-247 O-268 O-268AA | |
Contextual Info: HiPerFASTTM IGBT IXGH 15N120B IXGT 15N120B VCES = 1200 V IC25 = 30 A VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 |
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15N120B 15N120B O-247 O-268 O-268AA | |
Contextual Info: Advanced Technical Information HiPerFASTTM IGBT IXGH 15N120B VCES = 1200 V = 30 A IXGT 15N120B IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 |
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15N120B O-268 O-247 O-247) | |
IC IGBT 15N120
Abstract: 15n120 H1AA1 "bi-directional switches" IGBT 15n120 igbt
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15N120 O-220AB 20110120b IC IGBT 15N120 15n120 H1AA1 "bi-directional switches" IGBT 15n120 igbt | |
IC IGBT 15N120
Abstract: bi-directional switches IGBT 15n120
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15N120 O-263AB 20110120b IC IGBT 15N120 bi-directional switches IGBT 15n120 |