15NS Search Results

Contextual Info: y UC1711 UC3711 UNITRODE Dual Ultra High-Speed FET Driver 15ns Propagation Delay 1.5A Source or Sink Output Drive Operation with 5V to 35V Supply High-Speed Schottky NPN Process 8-PIN MINIDIP Package ABSOLUTE MAXIMUM RATINGS note 1 Input Supply Voltage, V c c . 40V

8X13

Abstract: T15V256B
Contextual Info: tm TE CH Preliminary T15V256B 32K X 8 LOW POWER CMOS STATIC RAM SRAM FEATURES GENERAL DESCRIPTION ¡EHigh speed access time: 12/15ns The T15V256B is a low power and low voltage CMOS static RAM. organized as 32,768 x 8 bits that operates on a 2.7V to 3.6V power

8X13

Abstract: TAIWAN MEMORY TECHNOLOGY
Contextual Info: tm TE CH Preliminary T15M256C 32K X 8 LOW POWER CMOS STATIC RAM SRAM FEATURES GENERAL DESCRIPTION ¡EHigh speed access time: 12/15ns The T15M256C is a low power CMOS static RAM. organized as 32,768 x 8 bits that operates on a single +5-volt power supply. Low operating

lt 8232

Abstract: LT 8215 lt 8219 lt 8239 LT 8209 lt 8217 lt 8227 lt 8220 LT 8233 lt 8221
Contextual Info: GAL6002 High Performance E2CMOS FPLA Generic Array Logic Features Functional Block Diagram ICLK • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 15ns Maximum Propagation Delay — 75MHz Maximum Frequency — 6.5ns Maximum Clock to Output Delay — TTL Compatible 16mA Outputs

K6R1004C1D

Contextual Info: PRELIMINARY Preliminary PRELIMINARY K6R1004C1D CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary. Current modify 1. Delete 15ns speed bin.

ta25 du14

Contextual Info: ST1641OOOAG1 -xxLVG 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *R A C *C A C ‘ rc STI. •-60LVG 60ns 15ns 110ns STI. •-70LVG 70ns 20ns 130ns STI. •-80LVG 80ns 20ns 150ns The Simple Technology STI641000AG1 is a 1M x 64 bits

jeida+dram+88+pin

Abstract: jeida 88 pin jeida dram 88 pin
Contextual Info: STI321000C1 -xxVx 88-PIN CARDS 1M X 32 DRAM Card FEATURES • Performance range: ^RAC ^CAC *RC STI321000C1-60Vx 60ns 15ns 110ns STI32100OC1-7OVx 70ns 18ns 130ns STI321000C1-80Vx 80ns 20ns 150ns The Simple Technology STI321000C1 is a 1M bit x 32 Dynamic RAM high density memory card. The Simple Technology

jeida dram 88 pin

Abstract: STI324000C1
Contextual Info: STI324000C1 -X X V 88-PIN CARDS 4M X 32 DRAM Card FEATURES • GENERAL DESCRIPTION Performance range: ^RAC Wc *RC STI324000C1 -60V 60ns 15ns 110ns STI324000C1-70V 70ns 20ns 130ns The Simple Technology STI324000C1 is a 4M bil x 32 Dynamic RAM high density memory card. The Simple Technology

Contextual Info: STI368003 72-PIN SIMMS 8M X 36 BITS DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI368003-60 60ns 15ns 110ns STI368003-70 70ns 20ns 130ns • Fast Page Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability

5962-8868101LA

Abstract: SMD a7 Transistor MT5C2564 5962-8868106LA 5962-8868103LA
Contextual Info: SRAM MT5C2564 Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-88681 • MIL-STD-883 24-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access

Contextual Info: STI338000 72-PIN SIMMS 8M X 33 Bits DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC I rc STI338000-60 60ns 15ns 110ns STI338000-70 70ns 20ns 130ns STI338000-80 80ns 20ns 150ns The Simple Technology STI338000 is a 8M x 33 bits Dynamic

Contextual Info: STI32256 72-PIN SIMMS 256K X 32 DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI32256-60 60ns 15ns 110ns STI32 2 56-70 70ns 20ns 130ns STI32256-80 80ns 20ns 150ns The Simple Technology STI32256 is a 256K bit x 32 Dynamic

6 PIN EEPROM

Contextual Info: STK11C88 SimTEK CMOS nvSRAM High Performance 32K x 8 Nonvolatile Static RAM ADVANCE FEATURES DESCRIPTION • 25 and 30ns Access Times • 12 and 15ns Output Enable Access Times • Store to EEPROM Initiated by Software Sequence on Address Pins • Recall to SRAM Initiated by Software

Contextual Info: STI644004UD1-60VG 168-PIN DIMMS 4M X 64 Bit DRAM DIM M with EDO and without Buffers FEATURES • GENERAL DESCRIPTION Performance range: ^RAC I ^CAC 60ns 15ns I rC ^HPC 104ns 25ns The Simple Technology STI644004UD1-60VG is a 4M x 64 bit Dynamic RAM high density memory module. The Simple

Contextual Info: UC1711 UC3711 Dual Ultra High-Speed FET Driver FEATURES BLOCK DIAGRAM • 25ns Rise and Fall into 1000pF • 15ns Propagation Delay 7.5V REG • 1.5A Source or Sink Output Drive 6 VCC 7 A Out 5 B Out 3 Gnd 3k • Operation with 5V to 35V Supply 2.5k • High-Speed Schottky NPN Process

F372A

Abstract: GCOY6911 OSRAM* 640
Contextual Info: 650nm Resonant Cavity LED-Chip 650nm Resonant Cavity LED Die F372A Vorläufige Daten / Preliminary Data Besondere Merkmale Features • • • • • keine Schwelle hohe Leistung Kurze Schaltzeiten: 15ns Oberflächenstrahler Optimale Wellenlänge für Kunstoff-Faserübertragung Plastic optical

PW 2N

Abstract: 4392
Contextual Info: 2N/PN/SST4391 SERIES SINGLE N-CHANNEL JFET SWITCH Linear Integrated Systems FEATURES Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 LOW ON RESISTANCE rDS on ≤ 30Ω FAST SWITCHING tON ≤ 15ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated)

K0032

Abstract: Y255 QN22
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 001772A flflö ■ S M û K KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES • Fast Access Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.)

Contextual Info: UC1711 UC3711 Dual Ultra High-Speed FET Driver FEATURES BLOCK DIAGRAM • 25ns Rise and Fall into 1000pF • 15ns Propagation Delay 7.5V REG • 1.5A Source or Sink Output Drive 6 VCC 7 A Out 5 B Out 3 Gnd 3k • Operation with 5V to 35V Supply 2.5k • High-Speed Schottky NPN Process

C1608

Abstract: 22nk C1608-22NK C1608-100
Contextual Info: STANDARD Series C1608 & C2012 SERIES C1608 C1608-10NS C1608-12NS C1608-15NS C1608-18NS C1608-22NK C1608-27NK C1608-33NK C1608-39NK C1608-47NK C16Ö8-56NK C1608-68NK C1608-82NK C1608-100* C1608-120* C1608-150* C1608-180* C1608-220* C1608-270* C1608-330* C1608-390*

Contextual Info: Standard Products UT8R512K8 512K x 8 SRAM Advanced Data Sheet April 2, 2003 FEATURES q 15ns maximum access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q CMOS compatible inputs and output levels, three-state bidirectional data bus

A15G

Contextual Info: Standard Products UT8R512K8 512K x 8 SRAM Advanced Data Sheet March 11, 2003 FEATURES q 15ns maximum access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q CMOS compatible inputs and output levels, three-state bidirectional data bus

Contextual Info: CMOS STATIC RAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71024 Integrated Device Technology, Inc. FEATURES: The IDT71024 uses eight bidirectional input/output lines to provide simultaneous access to all bits in a word and has an output enable (OE) pin which operates as fast as 15ns.

Contextual Info: BiCMOS STATIC RAM 256K 32K x 8-BIT PRELIMINARY IDT71B256SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 8 ad vanced high-speed B iC M O S static RAM • Equal acce ss and cycle tim es — C om m ercia l: 10 /12/15ns • O ne C hip S elect plus one O utput E nable pin